Abstract:
A data holding characteristic of a memory cell is improved in a memory system in which data is encoded and written to a memory cell.A first candidate parity generation unit generates, as a first candidate parity, a parity for detecting an error in an information section in which a predetermined value is assigned in a predetermined variable area. A second candidate parity generation unit generates, as a second candidate parity, a parity for detecting an error in the information section in which a value different from the predetermined value is assigned in the predetermined variable area. A selection unit selects a parity that satisfies a predetermined condition from among the first and second candidate parities as a selection parity. An output unit outputs a codeword constituted by the information section corresponding to the selection parity and the selection parity.
Abstract:
[Object] To sufficiently reduce frequency of error occurrence in memory cells.[Solution] A reading unit reads read data from a memory cell, the read data including an information bit and reversal information for determining whether or not the information bit has been reversed. In addition, an error detection/correction unit detects the presence or absence of an error in the information bit and corrects the error. A data reversing unit reverses the information bit that has the error corrected and the reversal information. Furthermore, a writing unit writes the reversed information bit and the reversed reversal information in the memory cell.
Abstract:
An error detection and correction apparatus includes a code word read-out unit to execute read processing to read out a code word including a plurality of code elements by detection of an erasure position as read data from a memory address and to execute re-read processing to read out the code word as re-read data from the memory address after a predetermined time is elapsed from the time to read out the read data; a timing control erasure position detection unit to detect a position of the code element having a value not matched as the erasure position in the code word by determining whether or not the value is matched per the code word in the read data and the re-read data; and an error correction unit to correct an error based on the erasure position in the code word where the erasure position is detected.
Abstract:
Disclosed herein is a storage control apparatus including: a command processing section configured to receive a command requesting accesses to a plurality of access units by specifying an address in a memory space including a plurality of banks; and an address generating section configured to generate an address of an access unit serving as an object of the accesses in a bank selected from the banks as a bank determined in advance for the specified address.
Abstract:
The order of read access to a memory is appropriately determined. A memory system includes a plurality of memories and a memory controller. The memory controller includes a memory write control unit and a memory read control unit. The memory write control unit generates a write request for any one of the plurality of memories on the basis of a write command from a computer. The memory read control unit generates a read request for any one of the plurality of memories according to priority corresponding to a data processing state of write data related to the write request in the memory write control unit on the basis of a read command from the computer.
Abstract:
[Object] To sufficiently reduce frequency of error occurrence in memory cells.[Solution] A reading unit reads read data from a memory cell, the read data including an information bit and reversal information for determining whether or not the information bit has been reversed. In addition, an error detection/correction unit detects the presence or absence of an error in the information bit and corrects the error. A data reversing unit reverses the information bit that has the error corrected and the reversal information. Furthermore, a writing unit writes the reversed information bit and the reversed reversal information in the memory cell.
Abstract:
An error detection and correction unit includes: a first-code error detection section configured to detect whether or not each of a plurality of first code words in a second code word has an error, the second code word generated by encoding the plurality of first code words in chains and being a code word containing a plurality of partial data; and a second-code error correction section configured to correct the error in one partial data containing the first code word in which the error is detected of the plurality of partial data in the second code word, based on adjacent partial data adjacent to the one partial data.
Abstract:
There is provided a memory control apparatus including: a pre-read processing section reading pre-read data from a data area to be written to before a write process in a predetermined data area of a memory cell array; a conversion determination section which, upon selectively allowing the pre-read data to transition to either a first conversion candidate or a second conversion candidate of the write data to be written in the write process, generates a determination result for selecting either of the candidates based on the larger of two values of which one is the number of bits transitioning from the first value to the second value and of which the other is the number of bits transitioning from the second value to the first value; and a conversion control section selecting either of the candidates in accordance with the determination result.
Abstract:
A storage controlling apparatus includes a command decoder and command processing section. The command decoder decides whether or not a plurality of access object addresses of different commands included in a command string correspond to words different from each other in a same one of blocks of a memory cell array which have a common plate. The command processing section collectively and successively executes, when it is decided that the access object addresses of the commands correspond to the words different from each other in the same block of the memory cell array, those of operations in processing of the commands in which an equal voltage is applied as a drive voltage between the plate and a bit line.
Abstract:
Disclosed herein is a storage controlling apparatus, including: a status acquisition section configured to acquire status including a number of times of execution of verification after writing into a memory from the memory; a history information retention section configured to retain a history of the status as history information in an associated relationship with each of predetermined regions of the memory; and a region selection section configured to select a region which satisfies a condition in accordance with the history information when a new region is to be used in the memory.