公开(公告)号：US20180308670A1

公开(公告)日：2018-10-25

申请号：US15899634

申请日：2018-02-20

Applicant: SPTS Technologies Limited

Inventor： ANTHONY WILBY ,  STEVE BURGESS ,  IAN MONCRIEFF ,  CLIVE WIDDICKS ,  SCOTT HAYMORE ,  RHONDA HYNDMAN

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01J37/3408 ,  C23C14/345 ,  C23C14/351 ,  C23C14/50 ,  C23C14/505 ,  H01J37/32669 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3485 ,  H01L21/2855 ,  H01L21/76877

Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

公开(公告)号：US20210246545A1

公开(公告)日：2021-08-12

申请号：US17241237

申请日：2021-04-27

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： SCOTT HAYMORE ,  AMIT RASTOGI ,  RHONDA HYNDMAN ,  STEVE BURGESS ,  IAN MONCRIEFF

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  C23C14/35 ,  H01J37/32

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

公开(公告)号：US20150075973A1

公开(公告)日：2015-03-19

申请号：US14483926

申请日：2014-09-11

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： ALEX THEODOSIOU ,  STEVE BURGESS

IPC: H01L21/02 ,  H01L21/67

Abstract: The invention relates to a method of pre-cleaning a semiconductor structure and to associated modular semiconductor process tools. The method includes the steps of: (i) providing a semiconductor structure having an exposed dielectric layer of an organic dielectric material, wherein the dielectric layer has one or more features formed therein which expose one or more electrically conductive structures to be pre-cleaned, in which the electrically conductive structures each include a metal layer, optionally with a barrier layer formed thereon, and the surface area of the exposed dielectric layer is greater than the surface area of the electrically conductive structures exposed by the dielectric layer; and (ii) pre-cleaning the semiconductor structure by performing an Ar/H2 sputter etch to remove material from the exposed electrically conductive structures and to remove organic dielectric material from the exposed dielectric layer.

Abstract translation: 本发明涉及一种预清洁半导体结构和相关的模块化半导体工艺工具的方法。 该方法包括以下步骤：（i）提供具有有机介电材料的暴露电介质层的半导体结构，其中介电层具有形成在其中的一个或多个特征，其暴露要预清洁的一个或多个导电结构， 其中导电结构各自包括金属层，任选地在其上形成阻挡层，并且暴露的电介质层的表面积大于由电介质层暴露的导电结构的表面积; 和（ii）通过执行Ar / H 2溅射蚀刻来预先清洁半导体结构，以从暴露的导电结构去除材料并从暴露的介电层去除有机电介质材料。

公开(公告)号：US20200090913A1

公开(公告)日：2020-03-19

申请号：US16541635

申请日：2019-08-15

Applicant: SPTS Technologies Limited

Inventor： TONY WILBY ,  STEVE BURGESS ,  ADRIAN THOMAS ,  RHONDA HYNDMAN ,  SCOTT HAYMORE ,  VLIVE WIDDICKS ,  IAN MONCRIEFF

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

公开(公告)号：US20190267962A1

公开(公告)日：2019-08-29

申请号：US16129346

申请日：2018-09-12

Applicant: SPTS Technologies Limited

Inventor： RHONDA HYNDMAN ,  STEVE BURGESS

IPC: H03H3/10 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H03H9/145 ,  C23C14/35 ,  C23C14/34 ,  C23C14/08

Abstract: A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (Ra) of 11 angstroms or less.

公开(公告)号：US20170294294A1

公开(公告)日：2017-10-12

申请号：US15478283

申请日：2017-04-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： SCOTT HAYMORE ,  AMIT RASTOGI ,  RHONDA HYNDMAN ,  STEVE BURGESS ,  IAN MONCRIEFF ,  CHRIS KENDAL

IPC: H01J37/34 ,  C23C14/06 ,  C23C14/50 ,  C23C14/35 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3405 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/35 ,  C23C14/505 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426

Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.