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1.发明申请公开(公告)号：US20180308670A1
公开(公告)日：2018-10-25
申请号：US15899634
申请日：2018-02-20
Applicant: SPTS Technologies Limited
Inventor： ANTHONY WILBY , STEVE BURGESS , IAN MONCRIEFF , CLIVE WIDDICKS , SCOTT HAYMORE , RHONDA HYNDMAN
IPC: H01J37/34 , C23C14/35 , C23C14/34 , H01L21/285 , H01L21/768
CPC classification number: H01J37/3408 , C23C14/345 , C23C14/351 , C23C14/50 , C23C14/505 , H01J37/32669 , H01J37/32715 , H01J37/3405 , H01J37/3452 , H01J37/3485 , H01L21/2855 , H01L21/76877
Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.
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公开(公告)号：US20160289815A1
公开(公告)日：2016-10-06
申请号：US15084574
申请日：2016-03-30
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： STEPHEN R. BURGESS , RHONDA HYNDMAN , AMIT RASTOGI , EDUARDO PAULO LIMA , CLIVE L. WIDDICKS , PAUL RICH , SCOTT HAYMORE , DANIEL COOK
CPC classification number: C23C14/0641 , C23C14/0617 , C23C14/3485 , C23C14/35 , C23C14/351 , H01J37/32669 , H01J37/3405 , H01J37/3429 , H01J37/345 , H01J37/3452 , H01J37/3461 , H01J37/3467 , H01J37/3476
Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.
Abstract translation: 一种方法是通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上。 在该方法中，溅射材料从靶溅射，其中靶和衬底间隔2.5至10cm的间隔，并且在室内产生二次磁场，这引起由脉冲DC产生的等离子体 磁控管装置朝向腔室的一个或多个壁膨胀。
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公开(公告)号：US20210246545A1
公开(公告)日：2021-08-12
申请号：US17241237
申请日：2021-04-27
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： SCOTT HAYMORE , AMIT RASTOGI , RHONDA HYNDMAN , STEVE BURGESS , IAN MONCRIEFF
Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.
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Patent Agency Ranking
公开(公告)号：US20150125375A1
公开(公告)日：2015-05-07
申请号：US14532098
申请日：2014-11-04
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： YUN ZHOU , RHONDA HYNDMAN , STEPHEN R. BURGESS
CPC classification number: C23C14/0036 , C01B33/12 , C23C14/10 , C23C14/3485 , C23C14/35
Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.
Abstract translation: 根据本发明，通过使用基本上由氧和氪组成的溅射气体混合物的脉冲DC反应溅射，将SiO 2沉积到衬底上的方法。
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5.发明申请公开(公告)号：US20200090913A1
公开(公告)日：2020-03-19
申请号：US16541635
申请日：2019-08-15
Applicant: SPTS Technologies Limited
Inventor： TONY WILBY , STEVE BURGESS , ADRIAN THOMAS , RHONDA HYNDMAN , SCOTT HAYMORE , VLIVE WIDDICKS , IAN MONCRIEFF
Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.
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公开(公告)号：US20190267962A1
公开(公告)日：2019-08-29
申请号：US16129346
申请日：2018-09-12
Applicant: SPTS Technologies Limited
Inventor： RHONDA HYNDMAN , STEVE BURGESS
Abstract: A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (Ra) of 11 angstroms or less.
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公开(公告)号：US20170294294A1
公开(公告)日：2017-10-12
申请号：US15478283
申请日：2017-04-04
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： SCOTT HAYMORE , AMIT RASTOGI , RHONDA HYNDMAN , STEVE BURGESS , IAN MONCRIEFF , CHRIS KENDAL
CPC classification number: H01J37/3405 , C23C14/0617 , C23C14/0641 , C23C14/3407 , C23C14/345 , C23C14/35 , C23C14/505 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3426
Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.
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公开(公告)号：US20170104465A1
公开(公告)日：2017-04-13
申请号：US15286283
申请日：2016-10-05
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： STEPHEN R. BURGESS , RHONDA HYNDMAN , AMIT RASTOGI , SCOTT HAYMORE , CONSTANINE FRAGOS
Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.
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