公开(公告)号：US20150245428A1

公开(公告)日：2015-08-27

申请号：US14621177

申请日：2015-02-12

申请人： Stanley Electric Co., Ltd.

发明人： Koji MATSUMOTO ,  Mamoru MIYACHI ,  Yasuyuki SHIBATA

IPC分类号： H05B33/08 ,  B60Q1/14 ,  B60Q1/12

CPC分类号： H05B33/083 ,  B60Q1/12 ,  B60Q1/1423 ,  B60Q1/143 ,  B60Q2300/054 ,  B60Q2300/056 ,  B60Q2300/122 ,  B60Q2300/41 ,  F21S41/141 ,  F21S41/663 ,  H05B33/0815 ,  H05B33/0827 ,  H05B33/0854

摘要： A lightening apparatus includes light-emitting elements arranged in a matrix. One of the light-emitting elements is located at each intersection between at least two first reference voltage lines and “m” first drive voltage lines. A first reference voltage driver time-divisionally switches the first reference voltage lines. A first drive voltage driver supplies first luminous drive voltages to the first drive voltage lines. One of the light-emitting elements is located at each intersection between at least one second reference voltage line and “m” second drive voltage lines. A second reference voltage driver switches the second reference voltage line. A second drive voltage driver supplies second luminous drive voltages to the second drive voltage lines.

摘要翻译： 减光装置包括以矩阵形式布置的发光元件。 一个发光元件位于至少两个第一参考电压线和“m”个第一驱动电压线之间的每个交叉点处。 第一参考电压驱动器时分地切换第一参考电压线。 第一驱动电压驱动器向第一驱动电压线提供第一发光驱动电压。 一个发光元件位于至少一个第二参考电压线和“m”个第二驱动电压线之间的每个交叉点处。 第二参考电压驱动器切换第二参考电压线。 第二驱动电压驱动器向第二驱动电压线提供第二发光驱动电压。

公开(公告)号：US20150262978A1

公开(公告)日：2015-09-17

申请号：US14645316

申请日：2015-03-11

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Yasuyuki SHIBATA

IPC分类号： H01L25/075 ,  H01L33/46 ,  H01L33/62 ,  H01L33/20 ,  H01L33/50 ,  H01L33/44

CPC分类号： F21S48/1747 ,  F21S41/143 ,  F21S41/663

摘要： In a semiconductor light-emitting device including a semiconductor body including light-emitting elements arranged in a matrix, and a support body adapted to support the semiconductor body, the semiconductor body further includes a plurality of optical shield layers each provided at one of a first side face of a first one of the light-emitting elements and a second side face of a second one of the light-emitting elements opposing the first side face of the first light-emitting element.

摘要翻译： 在包括以矩阵形式布置的发光元件的半导体本体和适于支撑半导体本体的支撑体的半导体发光器件中，半导体本体还包括多个光屏蔽层，每个光屏蔽层设置在第一 第一发光元件的侧面和与第一发光元件的第一侧面相对的第二发光元件的第二侧面。

公开(公告)号：US20140319534A1

公开(公告)日：2014-10-30

申请号：US14257666

申请日：2014-04-21

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Mamoru MIYACHI ,  Tatsuma SAITO ,  Takako HAYASHI ,  Yasuyuki SHIBATA ,  Yusuke YOKOBAYASHI ,  Takanobu AKAGI ,  Ryosuke KAWAI

IPC分类号： H01L33/32 ,  H01L33/62 ,  H01L33/40

CPC分类号： H01L33/32 ,  H01L25/0753 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2924/00

摘要： A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.

摘要翻译： 半导体发光元件包括提供通孔的光学半导体层叠层，设置在光学半导体层叠层的表面上并与电极的周边部分与第二半导体层分离的电极，第一透明绝缘层 设置在电极的周边部分和光学半导体层叠层之间，以及设置成覆盖电极的第二透明绝缘层，其与第一透明绝缘层一起包围电极的周边部分。

公开(公告)号：US20130126925A1

公开(公告)日：2013-05-23

申请号：US13677696

申请日：2012-11-15

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Yasuyuki SHIBATA ,  Ji-Hao LIANG

IPC分类号： H01L33/58 ,  H01L33/00

CPC分类号： H01L33/58 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： A semiconductor light-emitting device, and a method for manufacturing the semiconductor light-emitting device, in which light propagating through a light-emitting layer and reaching an edge surface of a semiconductor film can be extracted to the exterior in an efficient manner. The semiconductor light-emitting device comprises a semiconductor film including a light-emitting layer made from a group III nitride semiconductor. The semiconductor film has a tapered edge surface inclined diagonally with respect to a light extraction surface. The light extraction surface has a relief structure comprising a plurality of protrusions having a shape originating from the crystal structure of the semiconductor film. The average size of the protrusions in a first region in the vicinity of an edge section of the light extraction surface is smaller than the average size of the protrusions in a second region.

摘要翻译： 半导体发光器件和半导体发光器件的制造方法，其中通过发光层传播并到达半导体膜的边缘表面的光可以以有效的方式被提取到外部。 半导体发光器件包括包含由III族氮化物半导体制成的发光层的半导体膜。 半导体膜具有相对于光提取表面倾斜倾斜的锥形边缘表面。 光提取表面具有包括多个突起的浮雕结构，其具有源自半导体膜的晶体结构的形状。 在光提取表面的边缘部分附近的第一区域中的突起的平均尺寸小于第二区域中的突起的平均尺寸。