公开(公告)号：US11063211B2

公开(公告)日：2021-07-13

申请号：US16201264

申请日：2018-11-27

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: G11B5/127 ,  H04R31/00 ,  H01L43/12 ,  B82Y25/00 ,  G01R33/09 ,  H01L27/22 ,  G01R33/00 ,  H01L43/08 ,  G01R33/02

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：US10221066B2

公开(公告)日：2019-03-05

申请号：US15220267

申请日：2016-07-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

IPC: B81C1/00 ,  H01L27/10

Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

公开(公告)号：US11737369B2

公开(公告)日：2023-08-22

申请号：US17343388

申请日：2021-06-09

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: G11B5/127 ,  H04R31/00 ,  H10N50/01 ,  B82Y25/00 ,  G01R33/09 ,  H10B61/00 ,  H10N59/00 ,  H10N50/10 ,  G01R33/00 ,  G01R33/02

CPC classification number: H10N50/01 ,  B82Y25/00 ,  G01R33/0011 ,  G01R33/0052 ,  G01R33/0206 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H10B61/00 ,  H10N50/10 ,  H10N59/00

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：US20190097127A1

公开(公告)日：2019-03-28

申请号：US16201264

申请日：2018-11-27

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: H01L43/12 ,  H01L43/08 ,  G01R33/02 ,  G01R33/09

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：US10177306B2

公开(公告)日：2019-01-08

申请号：US14938121

申请日：2015-11-11

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: G11B5/127 ,  H04R31/00 ,  H01L43/12 ,  G01R33/00 ,  G01R33/09 ,  H01L43/08 ,  H01L27/22

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：USRE46671E1

公开(公告)日：2018-01-16

申请号：US14069136

申请日：2013-10-31

Applicant: STMicroelectronics S.r.l.

Inventor： Chantal Combi ,  Benedetto Vigna ,  Federico Giovanni Ziglioli ,  Lorenzo Baldo ,  Manuela Magugliani ,  Ernesto Lasalandra ,  Caterina Riva

IPC: H01L29/84 ,  B81C1/00

CPC classification number: B81B7/0061 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/0023 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/3025 ,  H04R1/04 ,  H04R19/005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.

公开(公告)号：US20160332871A1

公开(公告)日：2016-11-17

申请号：US15220267

申请日：2016-07-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

IPC: B81C1/00

CPC classification number: B81C1/00539 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/019 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2203/0714 ,  H01L27/10

Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Abstract translation: 一种用于制造用于存储介质的微机电类型的相互作用系统的方法，具有支撑元件的相互作用系统和由支撑元件承载的相互作用元件，其设想是提供具有基板的半导体材料晶片，其具有 第一类导电性和顶面; 在所述顶表面附近的所述衬底的表面部分中形成具有与所述第一类型导电性相反的第二导电类型的第一相互作用区域; 并且从顶表面开始进行基板的电化学蚀刻，蚀刻相对于第二类型的导电性是选择性的，以便去除基板的表面部分并将第一相互作用区域与基板分离，从而形成 支撑元件。

公开(公告)号：US20160072057A1

公开(公告)日：2016-03-10

申请号：US14938121

申请日：2015-11-11

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: H01L43/12 ,  G01R33/09 ,  H01L43/08 ,  G01R33/00

CPC classification number: H01L43/12 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/08

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Abstract translation: 集成磁阻器件包括半导体材料的衬底，其在第一表面上被绝缘层覆盖。 铁磁材料的磁阻电阻在绝缘层内延伸并限定传感器的灵敏度平面。 铁磁材料的集中器包括沿横向方向延伸到灵敏度平面并且与磁电阻器垂直偏移的至少一个臂。 集中器集中使垂直于灵敏度平面的磁通线偏转，以产生指向与感光平面平行的方向的磁场分量。