公开(公告)号：US20180175224A1

公开(公告)日：2018-06-21

申请号：US15736985

申请日：2016-05-17

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Yoshiyuki Abe ,  Yasunori Yamanobe ,  Riichiro Wake ,  Masakazu Kuwahara

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022475 ,  C23C14/08 ,  C23C14/086 ,  C23C14/352 ,  H01L31/022425 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a photoelectric conversion element comprising ITiO as a transparent electrode that is formed using an inline-type sputtering method, and utilizing the high transmittance up to the near-infrared ray region and excellent conductivity of ITiO. Using the inline-type sputtering method, a first transparent conductive oxide film 8 comprising indium oxide or tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less is formed on a photoelectric conversion layer 7 side, and a second transparent conductive oxide film 9 comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % is laminated on an opposite side of the first transparent conductive film 8 from the photoelectric conversion layer 7.

公开(公告)号：US09721770B2

公开(公告)日：2017-08-01

申请号：US14641981

申请日：2015-03-09

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: C23C14/08 ,  H01B1/08 ,  H01J37/34 ,  C23C14/34 ,  H01L33/42 ,  H01L31/0224 ,  H01J1/00

CPC classification number: H01J37/3429 ,  C04B35/01 ,  C04B35/645 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/668 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  C04B2235/963 ,  C23C14/08 ,  C23C14/3414 ,  H01B1/08 ,  H01J1/00 ,  H01L31/022466 ,  H01L33/42

Abstract: A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.

公开(公告)号：US20150235820A1

公开(公告)日：2015-08-20

申请号：US14641981

申请日：2015-03-09

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: H01J37/34 ,  H01J1/00 ,  H01L31/0224 ,  C23C14/34 ,  H01L33/42

CPC classification number: H01J37/3429 ,  C04B35/01 ,  C04B35/645 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/668 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  C04B2235/963 ,  C23C14/08 ,  C23C14/3414 ,  H01B1/08 ,  H01J1/00 ,  H01L31/022466 ,  H01L33/42

Abstract: A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.

Abstract translation: 能够实现适合于蓝色LED或太阳能电池的透明导电膜的高速成膜的溅射靶。 氧化物烧结体包括氧化铟和氧化铈，以及一种或多种钛，锆，铪，钼和钨的氧化物。 作为Ce /（In + Ce）的原子数比，铈含量为0.3〜9原子％，铈的含量为9原子％以下，Ce /（In + Ce）。 氧化物烧结体具有二氧化硅结构的In 2 O 3相，其具有以平均粒径为3μm以下的晶粒细分散的萤石型结构的CeO 2相。

公开(公告)号：US08801973B2

公开(公告)日：2014-08-12

申请号：US13834305

申请日：2013-03-15

Applicant: Sumitomo Metal Mining Co., Ltd.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: H01B1/08 ,  C23C14/08 ,  C04B35/01 ,  C03C17/245 ,  C23C14/34

CPC classification number: C23C14/3414 ,  C03C17/245 ,  C04B35/01 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3407 ,  H01B1/08 ,  Y10T428/24355 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31935

Abstract: A target for sputtering or a tablet for ion plating, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same are provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 25% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract translation: 用于溅射的靶材或用于离子镀的片剂，适于获得其的氧化物烧结体及其制备方法以及通过使用它们获得的具有低的蓝光吸收和低电阻率的透明导电膜由 具有铟和镓作为氧化物的氧化物烧结体，其特征在于具有双晶型结构的In 2 O 3相形成主晶相，并且形成Ga 2 O 3型结构的GaInO 3相，或GaInO 3相和（ Ga，In）2 O 3相中，作为平均粒径为5μm以下的晶粒，其含量等于或高于10原子％，低于25原子％ 作为Ga /（In + Ga）的原子数比等。

公开(公告)号：US20130202850A1

公开(公告)日：2013-08-08

申请号：US13834305

申请日：2013-03-15

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: C23C14/34 ,  C03C17/245 ,  H01B1/08

CPC classification number: C23C14/3414 ,  C03C17/245 ,  C04B35/01 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3407 ,  H01B1/08 ,  Y10T428/24355 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31935

Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same.It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga,In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract translation: 用于溅射的靶或用于离子镀的片，其能够获得高速成膜和无结节，适于获得其的氧化物烧结体及其制造方法，以及具有低吸收率的透明导电膜 蓝光和低比电阻，通过使用它们获得。 由铟和镓作为氧化物的氧化物烧结体提供，其特征在于具有双晶型结构的In 2 O 3相形成主晶相，并且具有β-Ga 2 O 3型结构的GaInO 3相或GaInO 3相 和（Ga，In）2 O 3相，作为平均粒径为5μm以下的结晶粒，并且镓的含量等于或高于10原子％，低于35 以原子数比Ga /（In + Ga）等原子计。

公开(公告)号：US08728635B2

公开(公告)日：2014-05-20

申请号：US13759277

申请日：2013-02-05

Applicant: Sumitomo Metal Mining Co., Ltd.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: B32B15/04 ,  C04B35/04 ,  C04B35/10 ,  C04B35/453

CPC classification number: C23C14/3407 ,  C04B35/453 ,  C04B35/62695 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/661 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/81 ,  C23C14/086 ,  C23C14/3414 ,  H01B1/08 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/12618 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31678

Abstract: An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

Abstract translation: 提供具有氧化锌作为主要成分并含有镁的氧化物烧结体和透明导电性基体，以及具有氧化锌和镁的氧化物烧结体，其中Mg的含量为0.02〜0.30，以Mg / （Zn + Mg）; 具有氧化锌，镁，镓和/或铝的氧化物烧结体，其中镓和/或铝的含量超过0且等于或低于0.09，原子数比（Ga + Al）/（Zn + Ga + Al），Mg /（Zn + Ga + Al + Mg）的原子数比为0.02〜0.30。 通过处理这些氧化物烧结体获得的靶; 以及通过溅射法或离子镀法在基板上形成的透明导电膜。

公开(公告)号：US09099219B2

公开(公告)日：2015-08-04

申请号：US13967628

申请日：2013-08-15

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Yoshiyuki Abe ,  Riichiro Wake ,  Masakazu Kuwahara ,  Kentaro Sogabe ,  Azusa Oshiro ,  Hisaki Yada

IPC: H01B1/08 ,  H01L31/02 ,  H01L31/0224 ,  C23C14/34 ,  C23C30/00 ,  C04B35/01 ,  C23C14/08 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01B1/08 ,  C04B35/01 ,  C04B2235/3229 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/608 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/9646 ,  C23C14/08 ,  C23C14/3414 ,  C23C30/005 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541

Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.

Abstract translation: 根据本发明的氧化物蒸发材料包括以氧化铟为主要成分的烧结体和Ce / In原子比为0.001至0.110的铈。 CIE 1976色空间的L *值为62〜95.L *值为62〜95的氧化物蒸发材料具有最佳的氧量。 因此，即使少量的氧气被引入到成膜真空室中，也可以通过真空沉积法形成在可见光到近红外区域具有低电阻和高透射率的透明导电膜。 由于引入的氧气的量少，所以膜和蒸发材料之间的组成差异变小。 这减少了大量形成的膜之间的组成和特性的变化。

公开(公告)号：US20140020810A1

公开(公告)日：2014-01-23

申请号：US13938889

申请日：2013-07-10

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: G06F3/044

CPC classification number: G06F3/044 ,  B32B2037/246 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2457/202 ,  Y10T156/10

Abstract: A capacitive touch panel, which is capable of providing high quality display, without a problem of position detection, having a structure where at least a transparent conductive film and a dielectric layer are laminated onto a transparent substrate, and a member for position detection comprising at least a wiring portion for position detection along with a electrodes for position detection is arranged at said substrate frame portion, characterized in that the transparent conductive film is composed of an oxide having indium oxide as a main component and containing gallium and tin; and this is provided by a method for producing a capacitive touch panel, characterized in that after forming an amorphous transparent conductive film composed of an oxide having indium oxide as a main component and containing gallium and tin onto the transparent substrate or the like.

Abstract translation: 一种电容式触摸面板，其能够提供高质量的显示，而没有位置检测的问题，具有至少透明导电膜和电介质层层压到透明基板上的结构，以及用于位置检测的构件，包括 在所述基板框架部分布置有用于位置检测的位置检测用布线部分，其特征在于，所述透明导电膜由以氧化铟为主要成分并含有镓和锡的氧化物构成; 这是通过一种用于制造电容式触摸屏的方法提供的，其特征在于在形成由氧化铟作为主要成分并且含有镓和锡的氧化物构成的非晶形透明导电膜形成在透明基板上等上。

公开(公告)号：US20130177762A1

公开(公告)日：2013-07-11

申请号：US13759277

申请日：2013-02-05

Applicant: Sumitomo Metal Mining Co., Ltd.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  C04B35/453 ,  C04B35/62695 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/661 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/81 ,  C23C14/086 ,  C23C14/3414 ,  H01B1/08 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/12618 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31678

Abstract: An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

Abstract translation: 提供具有氧化锌作为主要成分并含有镁的氧化物烧结体和透明导电性基体，以及具有氧化锌和镁的氧化物烧结体，其中Mg的含量为0.02〜0.30，以Mg / （Zn + Mg）; 具有氧化锌，镁，镓和/或铝的氧化物烧结体，其中镓和/或铝的含量超过0且等于或低于0.09，原子数比（Ga + Al）/（Zn + Ga + Al），Mg /（Zn + Ga + Al + Mg）的原子数比为0.02〜0.30。 通过处理这些氧化物烧结体获得的靶; 以及通过溅射法或离子镀法在基板上形成的透明导电膜。

公开(公告)号：US10475939B2

公开(公告)日：2019-11-12

申请号：US15736985

申请日：2016-05-17

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Yoshiyuki Abe ,  Yasunori Yamanobe ,  Riichiro Wake ,  Masakazu Kuwahara

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/075 ,  C23C14/08 ,  C23C14/35

Abstract: Provided is a photoelectric conversion element comprising ITiO as a transparent electrode that is formed using an inline-type sputtering method, and utilizing the high transmittance up to the near-infrared ray region and excellent conductivity of ITiO. Using the inline-type sputtering method, a first transparent conductive oxide film 8 comprising indium oxide or tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less is formed on a photoelectric conversion layer 7 side, and a second transparent conductive oxide film 9 comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % is laminated on an opposite side of the first transparent conductive film 8 from the photoelectric conversion layer 7.