Curved display device
    1.
    发明授权

    公开(公告)号:US10146089B2

    公开(公告)日:2018-12-04

    申请号:US15711018

    申请日:2017-09-21

    Abstract: A curved display device including a first substrate, a thin film transistor (TFT) disposed on the first substrate, a pixel electrode connected to the TFT, a second substrate overlapping the first substrate, a liquid crystal layer disposed between the first and the second substrates, and a common electrode disposed between the second substrate and the liquid crystal layer, in which the pixel electrode includes a cross-shaped stem portion having a horizontal stem portion, a vertical stem portion, and a plurality of fine branches extending from the cross-shaped stem portion, at least one of the fine branches includes a first portion and a second portion having a width greater than that of the first portion, and an extending line from a boundary between the first portion and the second portion is sloped at an angle in a range of −10 degrees to +10 degrees with respect to the vertical stem portion.

    Curved display device
    2.
    发明授权

    公开(公告)号:US09772522B2

    公开(公告)日:2017-09-26

    申请号:US14957247

    申请日:2015-12-02

    CPC classification number: G02F1/133707 G02F1/134309

    Abstract: There is provided a curved display device including a first substrate, a thin film transistor (TFT) disposed on the first substrate, a pixel electrode connected to the TFT, a second substrate facing the first substrate, a common electrode positioned on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate, wherein the pixel electrode includes a cross-shaped stem portion including a horizontal stem portion and a vertical stem portion intersecting the horizontal stem portion and a plurality of fine branches extending from the cross-shaped stem portion, each of the fine branches includes a first portion and a second portion having a width greater than that of the first portion, and the first portion is connected to the cross-shaped stem portion.

    Liquid crystal display
    8.
    发明授权

    公开(公告)号:US09817281B2

    公开(公告)日:2017-11-14

    申请号:US14877678

    申请日:2015-10-07

    Abstract: A liquid crystal display according to an exemplary embodiment of the present inventive concept includes: a first insulating substrate; a gate line and a data line, a thin film transistor connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a second insulating substrate facing the first insulating substrate, wherein one pixel includes the thin film transistor and the pixel electrode and includes a first sub-region and a second sub-region which are separated by the gate line intervened therebetween, the high gradation sub-pixel electrode includes a first high gradation sub-pixel electrode disposed in the first sub-region, and a second high gradation sub-pixel electrode disposed in the second sub-region, and the low gradation sub-pixel electrode includes a first low gradation sub-pixel electrode disposed in the first sub-region, and a second low gradation sub-pixel electrode disposed in the second sub-region.

    Thin film transistor substrate and method of manufacturing the same
    9.
    发明授权
    Thin film transistor substrate and method of manufacturing the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US09093536B2

    公开(公告)日:2015-07-28

    申请号:US13914821

    申请日:2013-06-11

    Abstract: A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.

    Abstract translation: 薄膜晶体管基板包括基板,设置在基板上的栅极电极,设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上的氧化物半导体图案,其中氧化物半导体图案包括第一区域,其载流子浓度 在约1017每立方厘米至约1019每立方厘米的范围内,第二区域的载流子浓度小于第一区域的载流子浓度,蚀刻停止器设置在氧化物半导体图案上,其中蚀刻停止器覆盖 氧化物半导体图案的第一区域和第二区域,与蚀刻停止器和第二区域部分重叠的信号电极,以及覆盖蚀刻停止器和信号电极的钝化层。

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