Optical system for laser apparatus

    公开(公告)号:US10539803B2

    公开(公告)日:2020-01-21

    申请号:US15148480

    申请日:2016-05-06

    Abstract: An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.

    OPTICAL SYSTEM FOR LASER APPARATUS
    3.
    发明申请
    OPTICAL SYSTEM FOR LASER APPARATUS 审中-公开
    激光装置光学系统

    公开(公告)号:US20170075124A1

    公开(公告)日:2017-03-16

    申请号:US15148480

    申请日:2016-05-06

    Abstract: An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.

    Abstract translation: 一种用于激光装置的光学系统包括:长短轴反转模块,其包括位于入射激光束的传播路径中的分离器,第一反射镜和第二反射镜,其中第一反射镜包括第一子反射镜和 第二子镜以它们之间的预定角度彼此连接。 光学系统将具有不对称能量分布的入射激光束转换成具有对称能量分布的发射激光束。

    LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220384673A1

    公开(公告)日:2022-12-01

    申请号:US17580059

    申请日:2022-01-20

    Abstract: A method for manufacturing a light emitting element includes forming a first semiconductor structure including a first semiconductor layer doped with a first conductivity type dopant disposed on a base substrate, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type dopant; forming a second semiconductor structure spaced apart from another second semiconductor structure on the base substrate by etching the first semiconductor structure in a direction perpendicular to a surface of the base substrate; and activating a second conductivity type dopant in the second semiconductor layer of the second semiconductor structure to form a light emitting element core.

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