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    Method of coating display device side surface
    6.
    发明授权
    Method of coating display device side surface 有权

    公开(公告)号：US11314120B2

    公开(公告)日：2022-04-26

    申请号：US15974399

    申请日：2018-05-08

    申请人： Samsung Display Co., Ltd.

    发明人： Seok-Ho Lee ,  Min-Sung Kim ,  Ki-Su Jin ,  Jung-Min Hong

    IPC分类号： B05D1/02 ,  B05D1/32 ,  B05B13/04 ,  G02F1/1333 ,  G02F1/1335 ,  B05B12/20 ,  B05B12/18 ,  G02F1/13 ,  H01L21/67 ,  H01L21/683

    摘要： A coating device includes an upper stage, a lower stage and a spraying part. The upper stage masks an upper surface of a display panel. The lower stage masks a lower surface of the display panel. The spraying part sprays ink to a side surface of the display panel. The side surface of the display panel is exposed between the upper stage and the lower stage. The coating device includes the upper stage and the lower stage, so that the coating device may form a coating layer of uniform thickness by precisely spraying ink. In addition, a cross-section of the coating layer may be precisely formed having specific shape such as an L or C shape. A display apparatus having high light usage efficiency and reduced light leakage may be provided by using the coating device.

    Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device
    8.
    发明授权
    Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device 有权
    测量硅薄膜的方法，硅薄膜中的缺陷检测方法以及硅薄膜缺陷检测装置

    公开(公告)号：US09140742B2

    公开(公告)日：2015-09-22

    申请号：US13766271

    申请日：2013-02-13

    申请人： Samsung Display Co., Ltd.

    发明人： Alexander Voronov ,  Seok-Ho Lee ,  Ji-Hunny Jung ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

    IPC分类号： G01R31/02 ,  G01R31/26 ,  G01R31/265

    CPC分类号： G01R31/26 ,  G01R31/2648 ,  G01R31/265

    摘要： A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

    摘要翻译： 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。

    METHOD OF MEASURING A SILICON THIN FILM, METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM, AND SILICON THIN FILM DEFECT DETECTION DEVICE
    9.
    发明申请
    METHOD OF MEASURING A SILICON THIN FILM, METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM, AND SILICON THIN FILM DEFECT DETECTION DEVICE 有权
    测量硅薄膜的方法，检测硅薄膜中的缺陷的方法和硅薄膜缺陷检测装置

    公开(公告)号：US20130265078A1

    公开(公告)日：2013-10-10

    申请号：US13766271

    申请日：2013-02-13

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Alexander Voronov ,  Seok-Ho Lee ,  Ji-Hunny Jung ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

    IPC分类号： G01R31/26

    CPC分类号： G01R31/26 ,  G01R31/2648 ,  G01R31/265

    摘要： A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

    摘要翻译： 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。