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公开(公告)号：US20140294420A1
公开(公告)日：2014-10-02
申请号：US14225955
申请日：2014-03-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Han Jun Lee
IPC: G03G15/00
CPC classification number: G03G21/0005 , G03G15/5054
Abstract: An image forming apparatus is provided. The image forming apparatus includes a sensing unit configured to check a transfer belt, which serves to transfer a visible image to a printing medium, the image forming apparatus capable of reducing contamination of sensors since a lighting window of a sensor provided in the sensing unit is open and closed by a shutter and a shutter driving device.
Abstract translation: 提供一种图像形成装置。 图像形成装置包括感测单元，其被配置为检查用于将可见图像传送到打印介质的转印带，该图像形成设备能够减少传感器的污染，因为设置在感测单元中的传感器的点亮窗口为 通过快门和快门驱动装置打开和关闭。
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2.发明授权公开(公告)号：US10910080B2
公开(公告)日：2021-02-02
申请号：US16865675
申请日：2020-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Bae Bang , Seung Hwan Song , Dae Seok Byeon , Il Han Park , Hyun Jun Yoon , Han Jun Lee , Na Young Choi
Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.
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3.发明授权公开(公告)号：US10665312B2
公开(公告)日：2020-05-26
申请号：US16154111
申请日：2018-10-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Bae Bang , Seung Hwan Song , Dae Seok Byeon , Il Han Park , Hyun Jun Yoon , Han Jun Lee , Na Young Choi
Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.
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公开(公告)号：US10600453B2
公开(公告)日：2020-03-24
申请号：US16130034
申请日：2018-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Han Jun Lee , Dong Hun Kwak , Yo Han Lee
IPC: G11C7/00 , G11C7/10 , G11C7/18 , H01L27/11524 , G11C16/28 , G11C16/04 , G11C7/12 , G11C11/56 , G11C29/02
Abstract: A memory device includes a memory cell array including a plurality of memory cells, a page buffer unit including the plurality of memory cells, and a driving determination unit determining whether to perform at least one of a pre-charging operation, a development operation and a latching operation of page buffers connected to the memory cells provided with the read voltage.
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公开(公告)号：US11682463B2
公开(公告)日：2023-06-20
申请号：US17407369
申请日：2021-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Han Jun Lee , Seung Bum Kim , Il Han Park
IPC: G11C16/26 , G11C16/30 , G11C16/34 , G11C11/56 , G11C29/50 , G11C29/42 , G11C29/00 , G06F11/07 , G11C16/04
CPC classification number: G11C16/26 , G06F11/07 , G11C11/5642 , G11C16/30 , G11C16/349 , G11C16/3427 , G11C29/00 , G11C29/42 , G11C29/50 , G11C29/50004 , G11C16/0483 , G11C2029/5002
Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.
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Patent Agency Ranking
公开(公告)号：US20190214091A1
公开(公告)日：2019-07-11
申请号：US16047384
申请日：2018-07-27
Applicant: Samsung Electronics Co., LTD.
Inventor： Han Jun Lee , Seung Bum Kim , Il Han Park
Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.
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公开(公告)号：US09405268B2
公开(公告)日：2016-08-02
申请号：US14816499
申请日：2015-08-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Han Jun Lee
IPC: G03G21/16
CPC classification number: G03G21/1676 , G03G21/1821
Abstract: An image forming apparatus may include a pressing assembly provided adjacent to the developing device and configured to restrict a movement of the developing device. The pressing assembly may include a rotating shaft formed to extend in a first direction and an operating unit provided at an end of the rotating shaft to be rotated along with the rotating shaft and configured to restrict the movement of the developing device in the first direction. Due to such a structure, the developing device may come into close contact in the installing direction, and also the developing roller of the developing device and the photoreceptor may come into contact with each other.
Abstract translation: 图像形成装置可以包括与显影装置相邻设置并被配置为限制显影装置的移动的按压组件。 按压组件可以包括形成为沿第一方向延伸的旋转轴和设置在旋转轴的端部处的操作单元，以与旋转轴一起旋转并且构造成限制显影装置沿第一方向的移动。 由于这样的结构，显影装置可能在安装方向上紧密接触，并且显影装置的显影辊和感光体也可能彼此接触。
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公开(公告)号：US08948651B2
公开(公告)日：2015-02-03
申请号：US13742019
申请日：2013-01-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Han Jun Lee
CPC classification number: G03G15/0832 , G03G15/0865 , G03G15/0875 , G03G15/0896 , G03G21/1633 , G03G21/1647 , G03G21/1666 , G03G21/1671 , G03G21/1676
Abstract: An image forming apparatus having an improved structure of simply executing contact or separation between developing rollers and photoconductors is provided. The image forming apparatus includes a cover opening and closing a side of a main body, a photoconductor unit including a photoconductor, a laser scanning unit irradiating the photoconductor to form an electrostatic latent image and including a light source generating light and an optical window transmitting the light generated from the light source, a developing unit supplying a developer to the photoconductor and including a developing roller contacting or separated from the photoconductor, and a shutter unit operable in connection with the cover, opening the optical window when the cover closes the side of the main body, and closing the optical window when the cover opens the side of the main body.
Abstract translation: 提供了一种具有改进的结构的图像形成装置，其简单地执行显影辊和感光体之间的接触或分离。 图像形成装置包括打开和关闭主体的一侧的盖，包括感光体的感光体单元，照射感光体以形成静电潜像的激光扫描单元，并且包括产生光的光源和将窗口传输的光学窗口 从光源产生的光，将显影剂供应到光电导体并且包括与光电导体接触或分离的显影辊的显影单元和可与盖结合操作的快门单元，当盖关闭盖板时，打开光学窗口 主体，并且当盖打开主体的侧面时关闭光学窗口。
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公开(公告)号：US11127472B2
公开(公告)日：2021-09-21
申请号：US16806535
申请日：2020-03-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Han Jun Lee , Seung Bum Kim , Il Han Park
IPC: G11C16/26 , G11C16/30 , G11C16/34 , G11C11/56 , G11C29/50 , G11C29/42 , G11C29/00 , G06F11/07 , G11C16/04
Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.
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公开(公告)号：US10607705B2
公开(公告)日：2020-03-31
申请号：US16047384
申请日：2018-07-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Han Jun Lee , Seung Bum Kim , Il Han Park
IPC: G11C16/34 , G11C16/26 , G11C16/30 , G11C11/56 , G11C29/50 , G11C29/42 , G11C29/00 , G06F11/07 , G11C16/04
Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.
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