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公开(公告)号：USD991966S1
公开(公告)日：2023-07-11
申请号：US29798310
申请日：2021-07-07
Applicant: Samsung Electronics Co., Ltd.
Designer： Junghyun Kim , Jakyoung Lee , Changwon Lee
Abstract: FIG. 1 is a front view of a display screen or portion thereof with graphical user interface showing our new design according to a first embodiment;
FIG. 2 is a front view of a display screen or portion thereof with graphical user interface showing our new design according to a second embodiment; and,
FIG. 3 is a front view of a display screen or portion thereof with graphical user interface showing our new design according to a third embodiment.
The outer perimeter shown in broken lines in the figures illustrates a display screen or portion thereof and forms no part of the claimed design. The remaining broken lines in the figures illustrate portions of the graphical user interface that form no part of the claimed design.-
公开(公告)号：US10439078B2
公开(公告)日：2019-10-08
申请号：US15894215
申请日：2018-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heejeong Jeong , Jisoo Kyoung , Changwon Lee , Jinseong Heo
IPC: H01L31/0224 , H01L31/109 , H01L31/028 , H01L31/036
Abstract: Provided are a photosensor and a method of operating the same. The photosensor includes a lower electrode, a semiconductor layer, a 2-dimensional material layer, and an upper electrode. Photocurrent generated due to externally radiated light may be operated in a multiple detection mode including a lateral detection mode and a vertical detection mode. The upper electrode may include a plurality of electrode elements, which may be formed of the same conductive material or different conductive materials.
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公开(公告)号：US10317696B2
公开(公告)日：2019-06-11
申请号：US15379662
申请日：2016-12-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heejeong Jeong , Chanwook Baik , Changwon Lee
Abstract: Electromagnetic wave focusing devices and optical apparatuses including the same are provided. An electromagnetic wave focusing device may include a plurality of material members located at different distances from a reference point. The intervals and/or widths of the material members may vary with distance from the reference point. For example, the intervals and/or widths of the material members may increase or decrease with distance from the reference point. The intervals and/or widths of the material members may be controlled to satisfy a spatial coherence condition with the electromagnetic wave.
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公开(公告)号：US10129021B2
公开(公告)日：2018-11-13
申请号：US14684513
申请日：2015-04-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heejeong Jeong , Jisoo Kyoung , Changwon Lee , Chanwook Baik , Yeryoung Lee
Abstract: A photon pair generator includes a light source configured to emit light, and a nonlinear optical element configured to receive the light radiated from the light source and generate a quantum-entangled photon pair through spontaneous parametric down-conversion (SPDC), the nonlinear optical element including a polar material layer and a nonlinear material layer provided on the polar material layer.
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公开(公告)号：US09904077B2
公开(公告)日：2018-02-27
申请号：US14916052
申请日：2014-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yeonsang Park , Jineun Kim , Younggeun Roh , Changwon Lee , Sangmo Cheon , Unjeong Kim , Chanwook Baik , Youngzoon Yoon , Jaesoong Lee
IPC: B82Y20/00 , G02F1/01 , H01Q13/18 , B82Y40/00 , H01Q13/10 , H01Q13/28 , G02B6/12 , H01Q5/22 , G02F1/00
CPC classification number: G02F1/0102 , B82Y20/00 , B82Y40/00 , G02B6/12007 , G02B2006/12142 , G02F1/0018 , G02F1/0045 , G02F1/011 , H01Q5/22 , H01Q13/103 , H01Q13/18 , H01Q13/28
Abstract: Provided are an optical nano-antenna including a tunable material layer and methods of manufacturing and operating the optical nano-antenna. The optical nano-antenna includes a substrate; and a plurality of material layers sequentially laminated on the substrate. The plurality of material layers include at least one tunable material layer and at least one slot. A first tunable material layer and a metal layer are sequentially laminated on the substrate, and a first slot is formed in the metal layer. A metal layer and a first tunable material layer are sequentially laminated on the substrate, and a first slot is formed in the metal layer. A first tunable material layer, a metal layer, and a second tunable material layer are sequentially laminated on the substrate, and a first slot is formed in the metal layer. A second slot tilted with respect to the first slot is formed in the metal layer.
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Patent Agency Ranking
公开(公告)号：US09721967B2
公开(公告)日：2017-08-01
申请号：US15138873
申请日：2016-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sunwoo Lee , Sangwoo Lee , Changwon Lee , Jeonggil Lee
IPC: H01L27/115 , H01L27/11582 , H01L21/28 , H01L27/11578 , H01L29/49 , H01L23/535 , H01L27/1157
CPC classification number: H01L27/11582 , H01L21/28282 , H01L23/535 , H01L27/1157 , H01L27/11578 , H01L27/1159 , H01L29/4958 , H01L29/4966
Abstract: A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.
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7.发明授权Semiconductor device including ion gel material and electronic device including the semiconductor device 有权包括离子凝胶材料的半导体器件和包括半导体器件的电子器件公开(公告)号：US09548368B2
公开(公告)日：2017-01-17
申请号：US14712041
申请日：2015-05-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Unjeong Kim , Youngseon Shim , Yeonsang Park , Changwon Lee , Sungwoo Hwang
CPC classification number: H01L29/42356 , H01L27/1207 , H01L27/1237 , H01L29/1606 , H01L29/4908 , H01L29/51 , H01L29/78684
Abstract: A semiconductor device, a method for manufacturing the same, and an electronic device including the same are provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first channel layer and a first ion gel. The second transistor includes a second channel layer and a second ion gel. The first channel layer and the second channel layer may include, for example, graphene. The first ion gel and the second ion gel include different ionic liquids. The first ion gel and the second ion gel include different cations and/or different anions. One of the first transistor and the second transistor is a p-type transistor, and the other one is an n-type transistor. The combination of the first transistor and the second transistor constitutes an inverter.
Abstract translation: 提供半导体器件，其制造方法和包括该半导体器件的电子器件。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管包括第一沟道层和第一离子凝胶。 第二晶体管包括第二沟道层和第二离子凝胶。 第一沟道层和第二沟道层可以包括例如石墨烯。 第一离子凝胶和第二离子凝胶包括不同的离子液体。 第一离子凝胶和第二离子凝胶包括不同的阳离子和/或不同的阴离子。 第一晶体管和第二晶体管中的一个是p型晶体管，另一个是n型晶体管。 第一晶体管和第二晶体管的组合构成逆变器。
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8.发明授权Multi-wavelength surface plasmon laser and optoelectronic integrated circuit including the same 有权多波长表面等离激元激光器和光电集成电路包括相同公开(公告)号：US09356427B2
公开(公告)日：2016-05-31
申请号：US14513477
申请日：2014-10-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaesoong Lee , Jineun Kim , Yeonsang Park , Changwon Lee
CPC classification number: H01S5/1046 , H01S3/086 , H01S5/0425 , H01S5/1039 , H01S5/1053 , H01S5/106 , H01S5/1067 , H01S5/1096 , H01S5/14 , H01S5/3211 , H01S5/343 , H01S2301/176
Abstract: A multi-wavelength surface plasmon laser that simultaneously emits surface plasmons having a large number of wavelengths and includes an active layer whose thickness changes with position, and a metal cavity whose length changes with position so that light of different wavelengths is emitted according to position. Surface plasmons are generated at the interface between a metal layer and a semiconductor layer in response to the light of different wavelengths. The surface plasmons having different wavelengths may be resonated in the metal cavity whose length changes with position and may be emitted to the outside.
Abstract translation: 同时发射具有大量波长的表面等离子体激元的多波长表面等离子体激元，并且包括厚度随位置变化的有源层和长度随位置变化的金属腔，使得根据位置发射不同波长的光。 响应于不同波长的光，在金属层和半导体层之间的界面处产生表面等离子体激元。 具有不同波长的表面等离子体激元在金属腔中可以共振，其长度随着位置而变化并且可以发射到外部。
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公开(公告)号：US09343478B2
公开(公告)日：2016-05-17
申请号：US14486547
申请日：2014-09-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SunWoo Lee , Sangwoo Lee , Changwon Lee , Jeonggil Lee
IPC: H01L27/115 , H01L21/28 , H01L29/49
CPC classification number: H01L27/11582 , H01L21/28282 , H01L23/535 , H01L27/1157 , H01L27/11578 , H01L27/1159 , H01L29/4958 , H01L29/4966
Abstract: A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.
Abstract translation: 非易失性存储器件包括三维地布置在半导体衬底上的栅电极，从半导体衬底延伸并与栅电极的侧壁交叉的半导体图案，形成在半导体图案之间并形成在顶表面和底表面上的金属衬垫图案 以及形成在半导体图案和金属衬垫图案之间的电荷存储层。
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公开(公告)号：US08865579B2
公开(公告)日：2014-10-21
申请号：US13667618
申请日：2012-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sunwoo Lee , Sangwoo Lee , Changwon Lee , Jeonggil Lee
IPC: H01L29/72 , H01L27/115 , H01L21/28
CPC classification number: H01L27/11582 , H01L21/28282 , H01L23/535 , H01L27/1157 , H01L27/11578 , H01L27/1159 , H01L29/4958 , H01L29/4966
Abstract: A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.
Abstract translation: 非易失性存储器件包括三维地布置在半导体衬底上的栅电极，从半导体衬底延伸并与栅电极的侧壁交叉的半导体图案，形成在半导体图案之间并形成在顶表面和底表面上的金属衬垫图案 以及形成在半导体图案和金属衬垫图案之间的电荷存储层。
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