公开(公告)号：US20240332378A1

公开(公告)日：2024-10-03

申请号：US18463488

申请日：2023-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggwon KIM ,  Seung Geun JUNG ,  Myung Gil KANG ,  Gyeom KIM ,  Dongwon KIM

IPC: H01L29/417 ,  H01L21/768 ,  H01L23/522 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/41733 ,  H01L21/76805 ,  H01L23/5226 ,  H01L29/0847 ,  H01L29/401 ,  H01L23/53295 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include a substrate, a lower pattern on the substrate, a channel pattern on the lower pattern, a source/drain pattern on both sides of the channel pattern, a gate structure surrounding the channel pattern, a contact electrode electrically connected to the source/drain pattern, an etch stop layer between the gate structure and the contact electrode, and a contact interface layer on the source/drain pattern. The contact interface layer may include a first region between the source/drain pattern and the contact electrode and a second region between the source/drain pattern and the etch stop layer.

公开(公告)号：US20250022941A1

公开(公告)日：2025-01-16

申请号：US18904547

申请日：2024-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomjin PARK ,  Dongwon KIM ,  Bongseok SUH ,  Daewon KIM

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78

Abstract: A semiconductor device includes a first and second active regions extending in a first direction and having respective first and second widths in a second direction, the second width greater than the first width, a connection region connected to the first and second active regions and having a third width, between the first and second widths in the second direction, first and second gate structures respectively intersecting the first and second active regions and extending in the second direction, and a dummy structure intersecting at least a portion of the connection region, extending in the second direction, and between the first and second gate structures in the first direction. The dummy structure includes first and second pattern portions spaced apart from a side surface of the first gate structure by respective first and second distances in the first direction, the second distance greater than the first distance.

公开(公告)号：US20220310842A1

公开(公告)日：2022-09-29

申请号：US17464102

申请日：2021-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM ,  Dongwon KIM

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/36

Abstract: A semiconductor device including an active pattern, which has a base portion and a protrusion portion on the base portion, and a source/drain pattern provided on the base portion may be provided. The protrusion portion may include a first curved pattern portion, a first flat pattern portion disposed at a lower level than the first curved pattern portion, and a second curved pattern portion disposed at a lower level than the first flat pattern portion. Each of the first and second curved pattern portions has a curved side wall, and the first flat pattern portion has a flat side wall. The germanium concentration of the first curved pattern portion is a higher than the germanium concentration of the first flat pattern portion, and the germanium concentration of the first flat pattern portion is higher than the germanium concentration of the second curved pattern portion.

公开(公告)号：US20220282418A1

公开(公告)日：2022-09-08

申请号：US17712396

申请日：2022-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changwoo LEE ,  Dongwon KIM ,  Jiwoong KIM

IPC: D06F34/34 ,  D06F29/00

Abstract: A washing machine including a cabinet, a tub disposed in the cabinet, a drum rotatably disposed in the tub, and a control device detachably mounted on the cabinet. The control device includes a control frame detachably mounted on a front surface of the cabinet, a control panel detachably mounted on the control frame and a control module interposed between the control frame and the control panel. The control panel configured to be movable between a first position where the control panel is detachable from the control frame and a second position where a forward and backward movement with reference to the control frame is limited.

公开(公告)号：US20220274780A1

公开(公告)日：2022-09-01

申请号：US17672081

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeongsup BYEON ,  Inwook KOO ,  Dongwon KIM ,  Minyoung KIM ,  Yi JIN ,  Jongkyu KIM ,  Jinho SO ,  Byungjun AN ,  Yinghu XU ,  Beomsoo HWANG

IPC: B65G1/137 ,  B25J15/00 ,  B25J19/02 ,  B25J11/00 ,  G06K7/14

Abstract: A gas supply system includes a loading/unloading stage including a cradle loader where a cradle loaded with a gas container is loaded, a test buffer chamber is configured to test the gas container, and a loading/unloading robot configured to transfer the gas container between the cradle and the test buffer chamber. A gas supply stage includes a storage queue configured to temporarily store the gas container, a gas supply cabinet where the gas container is mounted, and a transfer robot configured to transfer the gas container between the test buffer chamber and the storage queue and between the storage queue and the gas supply cabinet.

公开(公告)号：US20200185393A1

公开(公告)日：2020-06-11

申请号：US16793912

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghun LEE ,  TaeYong KWON ,  Dongwon KIM

IPC: H01L27/11 ,  H01L29/417 ,  H01L27/092 ,  H01L27/11582

Abstract: An SRAM device includes first, second and third transistors, which are used as a pass gate transistor, a pull-down transistor, and a pull-up transistor, respectively. A channel region of each transistor may include a plurality of semiconductor sheets that are vertically stacked on a substrate. The semiconductor sheets used as the channel regions of the first and second transistors may have a width greater than the semiconductor sheets used as channel regions of the third transistor.

公开(公告)号：US20240375269A1

公开(公告)日：2024-11-14

申请号：US18660985

申请日：2024-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongkyu KIM ,  Kwangjun KIM ,  Dongwon KIM ,  Minyoung KIM ,  Seounghyun SEOK ,  Jinho SO ,  Jaehwa YANG ,  Heedoo YANG ,  Hyungho CHOI

IPC: B25J9/00 ,  B25J5/00 ,  B25J9/16 ,  B25J15/08 ,  B25J19/00 ,  B67B7/18

Abstract: A chemical drum replacement apparatus includes an automated robotic assembly configured to attach or detach a drum cap and a coupler module to or from a chemical drum and a transfer robotic assembly configured to transfer the chemical drum, where the automated robotic assembly includes a travelling module configured to move the automated robotic assembly, a manipulator on an upper surface of the travelling module, and a gripper at an end of the manipulator, the gripper configured to attach or detach the drum cap and the coupler module to or from the chemical drum.

公开(公告)号：US20230299139A1

公开(公告)日：2023-09-21

申请号：US18057986

申请日：2022-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Hwi CHO ,  Myung Gil KANG ,  Gibum KIM ,  Dongwon KIM

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L29/66545 ,  H01L29/66439

Abstract: A semiconductor device includes an active region on a substrate, source/drain patterns on the active region, channel patterns on the active region and connected to the source/drain patterns, each of the channel patterns including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, gate electrodes, which are respectively on the channel patterns and are extended in a first direction and parallel to each other, and active contacts, which are electrically and respectively connected to the source/drain patterns. A bottom surface of a first active contact is located at a first level, and a bottom surface of a second active contact is located at a second level higher than the first level. A bottom surface of a third active contact is located at a third level higher than the second level.

公开(公告)号：US20230223405A1

公开(公告)日：2023-07-13

申请号：US18122253

申请日：2023-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhee CHOI ,  Keunhwi CHO ,  Myunggil KANG ,  Seokhoon KIM ,  Dongwon KIM ,  Pankwi PARK ,  Dongsuk SHIN

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/161 ,  H01L29/167 ,  H01L29/423 ,  H01L29/775 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L29/0673 ,  H01L29/161 ,  H01L29/167 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66439

Abstract: An integrated circuit device includes a fin-type active area along a first horizontal direction on a substrate, a device isolation layer on opposite sidewalls of the fin-type active area, a gate structure along a second horizontal direction crossing the first horizontal direction, the gate structure being on the fin-type active area and on the device isolation layer, and a source/drain area on the fin-type active area, the source/drain area being adjacent to the gate structure, and including an outer blocking layer, an inner blocking layer, and a main body layer sequentially stacked on the fin-type active area, and each of the outer blocking layer and the main body layer including a Si1-xGex layer, where x≠0, and the inner blocking layer including a Si layer.

公开(公告)号：US20220384623A1

公开(公告)日：2022-12-01

申请号：US17886612

申请日：2022-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil KANG ,  Dongwon KIM ,  Minyi KIM ,  Keun Hwi CHO

IPC: H01L29/732 ,  H01L21/8228 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L29/735

Abstract: A semiconductor device including a well region in a substrate, an impurity region in the well region, a first active fin on the impurity region, a second active fin on the well region, and a connection pattern penetrating the second active fin and connected to the well region may be provided. The substrate and the impurity region include impurities having a first conductivity type. The well region includes impurities having a second conductivity type different from the first conductivity type. The first active fin includes a plurality of first semiconductor patterns that are spaced apart from each other in a direction perpendicular to a top surface of the substrate. The first semiconductor patterns and the impurity region include impurities having the first conductivity type.