公开(公告)号：US20170141275A1

公开(公告)日：2017-05-18

申请号：US15240030

申请日：2016-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hak Hwan KIM ,  Jung Tae OK

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/56 ,  H01L33/40 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/502 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005

Abstract: A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.

公开(公告)号：US20130149858A1

公开(公告)日：2013-06-13

申请号：US13710586

申请日：2012-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Tae OK ,  Hak Hwan KIM ,  Ho Sun PAEK ,  Kwon Joong KIM

IPC: H01L21/768

CPC classification number: H01L21/76892 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05171 ,  H01L2224/05568 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1132 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A bump manufacturing method may be provided. The bump manufacturing method may include forming a bump on an electrode pad included in a semiconductor device, and controlling a shape of the bump by reflowing the bump formed on the semiconductor device under an oxygen atmosphere.

Abstract translation: 可以提供凸块制造方法。 凸块制造方法可以包括在包括在半导体器件中的电极焊盘上形成凸块，并且通过在氧气氛下回流形成在半导体器件上的凸块来控制凸块的形状。