DISPLAY DEVICE
    5.
    发明申请

    公开(公告)号:US20210193733A1

    公开(公告)日:2021-06-24

    申请号:US17191619

    申请日:2021-03-03

    Abstract: A display device includes a substrate, an emissive layer; a plurality of color converting layers that share the emissive layer, a barrier arranged on the emissive layer between the plurality of color converting layers, a first insulating layer provided between the plurality of color converting layers and the emissive layer and a second insulating layer provided between the first insulating layer and the plurality of color converting layers. The barrier spatially separates the plurality of color converting layers from each other and the first insulating layer has a plurality of first openings respectively corresponding to the plurality of color converting layers.

    MICRO LED DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210118944A1

    公开(公告)日:2021-04-22

    申请号:US16922147

    申请日:2020-07-07

    Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

    DISPLAY APPARATUS
    7.
    发明申请
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20200075801A1

    公开(公告)日:2020-03-05

    申请号:US16677285

    申请日:2019-11-07

    Abstract: Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240419215A1

    公开(公告)日:2024-12-19

    申请号:US18659802

    申请日:2024-05-09

    Abstract: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel electrode configured to supply power to a subpixel; a common electrode; an organic transparent substrate; a driving layer provided on the organic transparent substrate and electrically connected to the pixel electrode, the driving layer including a driving device configured to control power on-off of the subpixel; and a light emitting unit provided on the driving layer and including an inorganic material, the light emitting unit including a first semiconductor layer, an active layer, and a second semiconductor layer.

    NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE

    公开(公告)号:US20240234628A1

    公开(公告)日:2024-07-11

    申请号:US18224255

    申请日:2023-07-20

    CPC classification number: H01L33/12 H01L33/06 H01L33/32

    Abstract: A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.

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