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公开(公告)号:US20230395016A1
公开(公告)日:2023-12-07
申请号:US18233148
申请日:2023-08-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhee CHOI , Kiho KONG , Nakhyun KIM , Junghun PARK , Jinjoo PARK , Yoohun HAN
CPC classification number: G09G3/32 , H01L27/156 , G09G2300/0452 , H01L33/346 , H01L33/10
Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.
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公开(公告)号:US20230275184A1
公开(公告)日:2023-08-31
申请号:US18144566
申请日:2023-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junsik HWANG , Sungjin KANG , Kyungwook HWANG , Junhee CHOI
IPC: H01L33/20 , H01L25/075 , H01L33/62 , H01L33/38
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/62 , H01L33/382
Abstract: A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.
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公开(公告)号:US20220406959A1
公开(公告)日:2022-12-22
申请号:US17582172
申请日:2022-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhee CHOI , Nakhyun KIM , Joosung KIM , Eunsung LEE , Joohun HAN , Kiho KONG , Junghun PARK
Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.
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公开(公告)号:US20210399173A1
公开(公告)日:2021-12-23
申请号:US17112346
申请日:2020-12-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhee CHOI , Nakhyun Kim , Jinjoo Park , Joohun Han
Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.
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公开(公告)号:US20210193733A1
公开(公告)日:2021-06-24
申请号:US17191619
申请日:2021-03-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyungwook HWANG , Hoyoung AHN , Junhee CHOI , Kiho KONG , Joohun HAN
Abstract: A display device includes a substrate, an emissive layer; a plurality of color converting layers that share the emissive layer, a barrier arranged on the emissive layer between the plurality of color converting layers, a first insulating layer provided between the plurality of color converting layers and the emissive layer and a second insulating layer provided between the first insulating layer and the plurality of color converting layers. The barrier spatially separates the plurality of color converting layers from each other and the first insulating layer has a plurality of first openings respectively corresponding to the plurality of color converting layers.
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公开(公告)号:US20210118944A1
公开(公告)日:2021-04-22
申请号:US16922147
申请日:2020-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joohun HAN , Junhee CHOI , Kiho KONG , Jinjoo PARK , Nakhyun KIM , Junghun PARK
Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.
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公开(公告)号:US20200075801A1
公开(公告)日:2020-03-05
申请号:US16677285
申请日:2019-11-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chilhee CHUNG , Junhee CHOI , Sungwoo HWANG , Shinae JUN , Deukseok CHUNG , Junseok CHO
Abstract: Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.
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公开(公告)号:US20170271606A1
公开(公告)日:2017-09-21
申请号:US15420877
申请日:2017-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhee CHOI , Taeho SHIN
IPC: H01L51/50
CPC classification number: H01L51/502 , C01B19/00 , C09K11/00 , H01L51/504 , H01L51/5056 , H01L51/5072 , H01L51/5088
Abstract: A light-emitting device is provided. The light-emitting device includes a first electrode structure, a light-emitting layer disposed on the first electrode structure, a second electrode structure disposed on the light-emitting layer, and a plurality of nano-particles disposed within the light-emitting layer. Each of the nano-particles includes a metal core and a dielectric shell that surrounds the metal core to generate plasmon resonance.
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公开(公告)号:US20240419215A1
公开(公告)日:2024-12-19
申请号:US18659802
申请日:2024-05-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunsung LEE , Kiho KONG , Junhee CHOI , Nakhyun KIM
Abstract: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel electrode configured to supply power to a subpixel; a common electrode; an organic transparent substrate; a driving layer provided on the organic transparent substrate and electrically connected to the pixel electrode, the driving layer including a driving device configured to control power on-off of the subpixel; and a light emitting unit provided on the driving layer and including an inorganic material, the light emitting unit including a first semiconductor layer, an active layer, and a second semiconductor layer.
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公开(公告)号:US20240234628A1
公开(公告)日:2024-07-11
申请号:US18224255
申请日:2023-07-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongchul SHIN , Joosung KIM , Younghwan PARK , Junhee CHOI
Abstract: A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.
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