公开(公告)号：US20230197693A1

公开(公告)日：2023-06-22

申请号：US17946763

申请日：2022-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junghun PARK ,  Eunsung LEE ,  Junhee CHOI

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/38 ,  H01L33/00 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/005 ,  H01L33/62 ,  H01L33/382 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: A micro light-emitting device display apparatus and a method of manufacturing the same are provided. The micro light-emitting device display apparatus includes a display unit including an array of a plurality of micro light-emitting devices, a driving unit backplane, and a bonding structure formed on coupling surfaces, facing each other, of the display unit and the driving unit backplane, and electrically connecting the display unit to the driving unit backplane. The bonding structure includes a plurality of bonding pads on one of the coupling surfaces of the display unit and driving unit backplane, and a dot pad array formed on the other coupling surface in a two-dimensional array to cover the plurality of bonding pads and an area therebetween.

公开(公告)号：US20170212793A1

公开(公告)日：2017-07-27

申请号：US15371524

申请日：2016-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoon CHOI ,  Eunwoo PARK ,  Junghun PARK

IPC: G06F9/54 ,  G06F9/445

CPC classification number: G06F9/441 ,  G06F9/4418 ,  G06F9/461

Abstract: Various embodiments include a first memory configured to store a first operating system and a second operating system; a second memory; and a processor, wherein the processor is configured to: check situation information associated with the electronic device based on execution of the first operating system in the second memory; when the situation information satisfies a predetermined condition, store, in the first memory, as a snapshot image, data associated with the execution of the first operating system and stored in the second memory; and execute the second operating system in the second memory.

公开(公告)号：US20220037396A1

公开(公告)日：2022-02-03

申请号：US17501996

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Hoyoung AHN ,  Junhee CHOI ,  Sungjin KANG ,  Junghun PARK

IPC: H01L27/15 ,  H01L33/42 ,  H01L33/14 ,  H01L33/50

Abstract: A high-resolution display device is provided. The high-resolution display device includes a light-emitting layer including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of transparent electrodes respectively formed on the second semiconductor layer in sub-pixel regions, a first electrode connected to the first semiconductor layer, a plurality of second electrodes connected to the plurality of transparent electrodes, a color-converting layer arranged over the light-emitting layer and configured to emit light of a predetermined color based on light generated by the light-emitting layer, which are sequentially stacked on a substrate including a plurality of sub-pixel regions. One or more ion injection regions corresponding to current injection regions corresponding to the plurality of the sub-pixel regions is formed in the second semiconductor layer.

公开(公告)号：US20200381475A1

公开(公告)日：2020-12-03

申请号：US16994201

申请日：2020-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Junhee CHOI ,  Junghun PARK ,  Joohun HAN

IPC: H01L27/15 ,  H01L27/12 ,  H01L33/42 ,  H01L33/06 ,  H01L33/50 ,  H01L33/32 ,  H01L25/075

Abstract: A display device is provided. The display device includes a substrate, an emission layer configured to emit light, the emission layer including a first semiconductor layer provided on the substrate, an active layer provided on the first semiconductor layer, and a second semiconductor layer provided on the active layer, and a plurality of color converting layers provided on the emission layer and configured to emit light of certain colors from light emitted from the emission layer.

公开(公告)号：US20190172969A1

公开(公告)日：2019-06-06

申请号：US16208901

申请日：2018-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghun PARK ,  Junhee CHOI

IPC: H01L33/00 ,  H01L33/08 ,  H01L27/15 ,  H01L33/32 ,  H01L33/48

Abstract: Provided are a semiconductor light-emitting array and a method of manufacturing the same. The manufacturing method includes forming a plurality of grooves in a region of a substrate and sequentially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate to form a light-emitting structure layer.

公开(公告)号：US20230395016A1

公开(公告)日：2023-12-07

申请号：US18233148

申请日：2023-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Nakhyun KIM ,  Junghun PARK ,  Jinjoo PARK ,  Yoohun HAN

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

CPC classification number: G09G3/32 ,  H01L27/156 ,  G09G2300/0452 ,  H01L33/346 ,  H01L33/10

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US20220406959A1

公开(公告)日：2022-12-22

申请号：US17582172

申请日：2022-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Nakhyun KIM ,  Joosung KIM ,  Eunsung LEE ,  Joohun HAN ,  Kiho KONG ,  Junghun PARK

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/44

Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

公开(公告)号：US20210118944A1

公开(公告)日：2021-04-22

申请号：US16922147

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee CHOI ,  Kiho KONG ,  Jinjoo PARK ,  Nakhyun KIM ,  Junghun PARK

IPC: H01L27/15 ,  H01L33/00

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US20240243220A1

公开(公告)日：2024-07-18

申请号：US18223323

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunil KIM ,  Junhee CHOI ,  Nakhyun KIM ,  Junghun PARK

IPC: H01L33/02 ,  G02B5/00 ,  H01L33/24

CPC classification number: H01L33/025 ,  G02B5/008 ,  H01L33/24 ,  G09G3/32

Abstract: A light-emitting device includes a first semiconductor layer having a first conductive type, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer and having a second conductive type that is electrically opposite to the first conductive type, an insulating film at least partially surrounding the first semiconductor layer, the active layer, and the second semiconductor layer, and a first plurality of photo-conversion particles provided inside the first semiconductor layer.

公开(公告)号：US20230317768A1

公开(公告)日：2023-10-05

申请号：US18308895

申请日：2023-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee CHOI ,  Kiho KONG ,  Jinjoo PARK ,  Nakhyun KIM ,  Junghun PARK

IPC: H01L27/15 ,  H01L33/00

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.