Abstract:
A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.
Abstract:
Disclosed are focus rings, substrate processing apparatuses including the same, and substrate processing methods using the same. The focus ring comprises a first ring formed around an axis that extends in a first direction and a second ring separate from the first ring and formed around the axis. A portion of an inner lateral surface of the second ring is in contact with a portion of an outer lateral surface of the first ring. When viewed from a cross-sectional view from a direction perpendicular to the axis, a first angle between the outer lateral surface and the first direction is different from a second angle between the inner lateral surface and the first direction.
Abstract:
A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.
Abstract:
Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.