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公开(公告)号：US11574677B2
公开(公告)日：2023-02-07
申请号：US17385263
申请日：2021-07-26
摘要： A nonvolatile memory device and a method of operating the same are provided. The nonvolatile memory device may include a memory cell array having a vertical stack-type structure, a control logic, and a bit line. The memory cell array may include memory cells that each include corresponding portions of a semiconductor layer and a resistance change layer. The control logic, in a read operation, may be configured to apply a first voltage to a non-select memory cell and a second voltage to a non-select memory cell. The first voltage turns on current only in the semiconductor layer portion of the non-select memory cell. The second voltage turns on current in both the semiconductor layer and resistance change layer portions of the select memory cell. The bit line may be configured to apply a read voltage to the select memory cell during the read operation.
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公开(公告)号：US11239416B2
公开(公告)日：2022-02-01
申请号：US16691818
申请日：2019-11-22
发明人： Jungho Yoon , Soichiro Mizusaki , Youngjin Cho
IPC分类号： H01L45/00
摘要： A variable resistance memory device includes a first conductive line extending in a first direction, a second conductive line extending in a second direction, the second direction intersecting the first direction on the first conductive line, a fixed resistance layer between the first conductive line and the second conductive line, and a variable resistance layer between the first conductive line and the second conductive line, wherein the fixed resistance layer and the variable resistance layer are electrically connected in parallel to each other between the first conductive line and the second conductive line.
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公开(公告)号：US10917942B2
公开(公告)日：2021-02-09
申请号：US16045834
申请日：2018-07-26
发明人： Jinhong Kim , Seyun Kim , Haengdeog Koh , Doyoon Kim , Hajin Kim , Soichiro Mizusaki , Minjong Bae , Changsoo Lee
摘要： Provided are a structure, a planar heater including the same, a heating device including the planar heater, and a method of preparing the structure. The structure includes a metal substrate, an insulating layer disposed on the metal substrate, an electrode layer disposed on the insulating layer, and an electrically conductive layer disposed on the electrode layer, wherein a difference in a coefficient of thermal expansion (CTE) between the metal substrate and the insulating layer is 4 parts per million per degree Kelvin change in temperature (ppm/K) or less.
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公开(公告)号：US10652957B2
公开(公告)日：2020-05-12
申请号：US15374273
申请日：2016-12-09
发明人： Seyun Kim , Soichiro Mizusaki , Haengdeog Koh , Doyoon Kim , Hajin Kim , Changsoo Lee , Intaek Han
摘要： A heating element includes a matrix material and a nanomaterial filler, wherein the nanomaterial filler includes at least one of a nano-sheet and a nanorod.
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公开(公告)号：US20180163969A1
公开(公告)日：2018-06-14
申请号：US15633832
申请日：2017-06-27
发明人： Changsoo Lee , Doyoon Kim , Hajin Kim , Haengdeog Koh , Seyun Kim , Jinhong Kim , Taehun Kim , Soichiro Mizusaki , Minjong Bae , Hiesang Sohn , Kunwoo Choi
CPC分类号： F24C7/062 , A47J37/0629 , F24C7/046 , F24C7/067 , F24C15/007 , H05B3/08 , H05B3/145 , H05B3/26 , H05B3/62 , H05B2203/002 , H05B2214/02
摘要： A planar heating apparatus includes a substrate, first electrodes on the substrate, second electrodes alternately arranged with the first electrodes, an electrode connector connecting end portions of the first or second electrodes to each other and a power connector connected to the electrode connector and to which a power supply is connected. The power connector extends outside of the substrate.
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公开(公告)号：US12041697B2
公开(公告)日：2024-07-16
申请号：US16919792
申请日：2020-07-02
发明人： Hiesang Sohn , Seyun Kim , Haengdeog Koh , Doyoon Kim , Soichiro Mizusaki , Jinhong Kim , Hajin Kim , Minjong Bae , Changsoo Lee
IPC分类号： H05B1/02 , B29C70/02 , B29C70/88 , C03C4/14 , C03C8/04 , C03C8/14 , C03C8/16 , C03C14/00 , C03C17/00 , H05B3/14 , H05B3/26
CPC分类号： H05B1/0263 , B29C70/025 , B29C70/88 , C03C4/14 , C03C8/04 , C03C8/14 , C03C8/16 , C03C14/004 , C03C17/007 , C03C17/008 , H05B3/14 , H05B3/141 , H05B3/146 , H05B3/26 , C03C2217/452 , C03C2217/48 , H05B2203/013
摘要： A heating element includes a plurality of matrix particles and a conductive inorganic filler disposed at interfaces between the plurality of matrix particles to provide a conductive network.
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公开(公告)号：US11856873B2
公开(公告)日：2023-12-26
申请号：US17395040
申请日：2021-08-05
发明人： Soichiro Mizusaki , Doyoon Kim , Seyun Kim , Yumin Kim , Jinhong Kim , Youngjin Cho
CPC分类号： H10N70/24 , H10B63/34 , H10B63/845 , H10N70/8833
摘要： A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variable resistance layer may include first to third oxide layers sequentially arranged in a direction perpendicular to a direction in which the first and second conductive elements are arranged. A dielectric constant of the second oxide layer may be greater than dielectric constants of the first and third oxide layers.
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公开(公告)号：US11672131B2
公开(公告)日：2023-06-06
申请号：US17317154
申请日：2021-05-11
发明人： Yumin Kim , Seyun Kim , Jinhong Kim , Soichiro Mizusaki , Youngjin Cho
CPC分类号： H01L27/2481 , H01L27/2454 , H01L45/06 , H01L45/1253 , H01L45/144 , H01L45/146 , H01L45/16
摘要： A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion.
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公开(公告)号：US11162687B2
公开(公告)日：2021-11-02
申请号：US15633832
申请日：2017-06-27
发明人： Changsoo Lee , Doyoon Kim , Hajin Kim , Haengdeog Koh , Seyun Kim , Jinhong Kim , Taehun Kim , Soichiro Mizusaki , Minjong Bae , Hiesang Sohn , Kunwoo Choi
摘要： A planar heating apparatus includes a substrate, first electrodes on the substrate, second electrodes alternately arranged with the first electrodes, an electrode connector connecting end portions of the first or second electrodes to each other and a power connector connected to the electrode connector and to which a power supply is connected. The power connector extends outside of the substrate.
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公开(公告)号：US20200161328A1
公开(公告)日：2020-05-21
申请号：US16662299
申请日：2019-10-24
发明人： Jungho YOON , Soichiro Mizusaki , Youngjin Cho
IPC分类号： H01L27/11582 , H01L21/762 , H01L27/11556 , H01L27/1157
摘要： Provided is a non-volatile memory device including a control logic, a semiconductor layer, a resistance switching layer, a gate oxide layer, and a gate stack including a plurality of gates and a plurality of insulating layers, wherein the plurality of gates and the plurality of insulating layers are stacked alternately with each other. The resistance switching layer is provided between the semiconductor layer and the gate stack. The gate oxide layer is provided between the resistance switching layer and the gate stack. A cell string including a plurality of memory cells is formed by the gate stack, the resistance switching layer, and the gate oxide layer.
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