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    Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same
    3.
    发明授权
    Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same 有权

    公开(公告)号：US11488875B2

    公开(公告)日：2022-11-01

    申请号：US16847727

    申请日：2020-04-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Junbum Park ,  Younghwan Kim ,  Jongsu Kim ,  Youngjoo Lee ,  Yoojin Jeong

    IPC分类号： G01B11/06 ,  G01J5/00 ,  G01B9/02 ,  H01L21/66 ,  G01N21/95 ,  H01J37/32

    摘要： A semiconductor substrate measuring apparatus includes a light source to generate irradiation light having a sequence of on/off at a predetermined interval, the light source to provide the irradiation light to a chamber with an internal space for processing a semiconductor substrate using plasma, an optical device between the light source and the chamber, the optical device to split a first measurement light into a first optical path, condensed while the light source is turned on, to split a second measurement light into a second optical path, condensed while the light source is turned off, and to synchronize with the on/off sequence, and a photodetector connected to the first and second optical paths, the photodetector to subtract spectra of first and second measurement lights to detect spectrum of reflected light, and to detect plasma emission light emitted from the plasma based on the spectrum of the second measurement light.

    Plasma control device and plasma processing system
    5.
    发明授权
    Plasma control device and plasma processing system 有权

    公开(公告)号：US11984297B2

    公开(公告)日：2024-05-14

    申请号：US17711181

    申请日：2022-04-01

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Sejin Oh ,  Youngdo Kim ,  Sanghun Kim ,  Sungyeol Kim ,  Younghwan Kim ,  Taemin Earmme ,  Changyun Lee ,  Sunghun Jang

    IPC分类号： H01J37/32 ,  H01L21/311

    CPC分类号： H01J37/32183 ,  H01J37/32165 ,  H01J37/32568 ,  H01L21/31116 ,  H01J2237/334

    摘要： A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.