IMAGE SENSOR
    5.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20240178252A1

    公开(公告)日:2024-05-30

    申请号:US18332270

    申请日:2023-06-09

    CPC classification number: H01L27/14627 H01L27/14603 H01L27/14621

    Abstract: In one embodiment, an image sensor includes unit pixels, each of the unit pixel including a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel in a plan view of the image sensor; and a lens array including a first sub-lens area on the first sub-pixel of each unit pixel and a second sub-lens area on the second sub-pixel of each unit pixel. The first sub-lens area may include a first micro lens, and the second sub-lens area includes a second micro lens. In addition, the first micro lens may include a depression defined in a central area thereof.

    DEPTH SENSOR
    8.
    发明公开
    DEPTH SENSOR 审中-公开

    公开(公告)号:US20240128290A1

    公开(公告)日:2024-04-18

    申请号:US18480479

    申请日:2023-10-03

    CPC classification number: H01L27/14614 G01S7/4816 H01L27/14627 H01L27/14645

    Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.

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