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    Read Scrub with Adaptive Counter Management
    1.
    发明申请
    Read Scrub with Adaptive Counter Management 有权
    使用自适应计数器管理阅读Scrub

    公开(公告)号：US20160124679A1

    公开(公告)日：2016-05-05

    申请号：US14526870

    申请日：2014-10-29

    Applicant: SanDisk Technologies Inc.

    Inventor： Yichao Huang ,  Chris Avila ,  Dana Lee ,  Henry Chin ,  Deepanshu Dutta ,  Sarath Puthenthermadam ,  Deepak Raghu

    IPC: G06F3/06 ,  G06F12/02

    CPC classification number: G06F3/0647 ,  G06F3/0608 ,  G06F3/0679 ,  G06F12/0223 ,  G06F2212/7205 ,  G11C16/0483 ,  G11C16/3431 ,  G11C16/349 ,  G11C16/3495 ,  G11C2211/5644 ,  G11C2211/5648

    Abstract: A number of complimentary techniques for the read scrub process using adaptive counter management are presented. In one set of techniques, in addition to maintaining a cumulative read counter for a block, a boundary word line counter can also be maintained to track the number of reads to most recently written word line or word lines of a partially written block. Another set of techniques used read count threshold values that vary with the number of program/erase cycles that a block has undergone. Further techniques involve setting the read count threshold for a closed (fully written) block based upon the number reads it experienced prior to being closed. These techniques can also be applied at a sub-block, zone level.

    Abstract translation: 提出了一些使用自适应计数器管理的读取擦除过程的免费技术。 在一组技术中，除了维持块的累积读计数器之外，还可以维持边界字行计数器以跟踪部分写入块的最近写入的字线或字线的读数。 使用的另一组技术读取计数阈值随着块所经历的编程/擦除周期数而变化。 进一步的技术涉及基于在关闭之前经历的数字读取来设置关闭（完全写入）块的读取计数阈值。 这些技术也可以应用于子区块级别。

    Inspection of non-volatile memory for disturb effects
    6.
    发明授权
    Inspection of non-volatile memory for disturb effects 有权
    检查非易失性存储器的干扰效应

    公开(公告)号：US09063879B2

    公开(公告)日：2015-06-23

    申请号：US13757774

    申请日：2013-02-02

    Applicant: SANDISK TECHNOLOGIES INC.

    Inventor： Nian Niles Yang ,  Chris Avila ,  Steven Sprouse ,  Jianmin Huang ,  Yichao Huang ,  Kulachet Tanpairoj

    IPC: G06F11/00 ,  G06F11/10

    CPC classification number: G06F11/1072 ,  G11C11/56 ,  G11C11/5642 ,  G11C16/3404 ,  G11C16/3418 ,  G11C29/52

    Abstract: A method performed in a data storage device including a non-volatile memory includes reading a representation of data, the representation corresponding to one or more selected states of storage elements of a group of storage elements of the non-volatile memory. The method includes, in response to a count of errors in the representation of the data exceeding a threshold, scheduling a remedial action to be performed on the group of storage elements.

    Abstract translation: 在包括非易失性存储器的数据存储设备中执行的方法包括读取数据的表示，所述表示对应于所述非易失性存储器的一组存储元件的存储元件的一个或多个选定状态。 该方法包括响应于超过阈值的数据的表示中的错误的计数，调度对该组存储元件执行的补救动作。

    SYSTEM AND METHOD FOR COUNTER FLUSH FREQUENCY
    7.
    发明申请
    SYSTEM AND METHOD FOR COUNTER FLUSH FREQUENCY 审中-公开
    计数器频率的系统和方法

    公开(公告)号：US20170075593A1

    公开(公告)日：2017-03-16

    申请号：US14852266

    申请日：2015-09-11

    Applicant: SanDisk Technologies Inc.

    Inventor： Hyoseong Kim ,  Yichao Huang

    IPC: G06F3/06

    CPC classification number: G06F3/0616 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0679 ,  G11C16/26 ,  G11C16/3431

    Abstract: Apparatus and method for determining when to save values of read counters are disclosed. Read counters store values that indicate the number of reads in respective blocks of a memory device. The values of the read counters may be stored in volatile memory, and may be periodically stored to non-volatile memory. The frequency at which the values of the read counters are stored to non-volatile memory may be dependent on the read disturb effect. One measure of the read disturb effect may be based on the characteristics of the respective blocks of the memory device, such as whether the respective block is open/closed, has on-chip copy, and whether the read is to a boundary wordline.

    Abstract translation: 公开了用于确定何时保存读取计数器的值的装置和方法。 读计数器存储指示存储器件的各个块中的读取次数的值。 读取计数器的值可以存储在易失性存储器中，并且可以周期性地存储到非易失性存储器。 读取计数器的值被存储到非易失性存储器的频率可以取决于读取的干扰效应。 读取干扰效应的一个度量可以基于存储器件的相应块的特性，例如各个块是开/关，是否具有片上复制，以及读取是否是边界字线。

    Optimized page programming order for non-volatile memory
    10.
    再颁专利
    Optimized page programming order for non-volatile memory 有权
    针对非易失性存储器优化页面编程顺序

    公开(公告)号：USRE45771E1

    公开(公告)日：2015-10-20

    申请号：US14285833

    申请日：2014-05-23

    Applicant: SanDisk Technologies Inc.

    Inventor： Steven Sprouse ,  Jianmin Huang ,  Chris Avila ,  Yichao Huang ,  Emilio Yero

    IPC: G06F12/00 ,  G11C11/56

    CPC classification number: G11C11/5628 ,  G11C2211/5648

    Abstract: During a programming data transfer process in a non-volatile storage system, recording units of data are transferred from a host to a memory device, such as a memory card. For each recording unit, pages of data are arranged in an order such that a page which takes longer to write to a memory array of the memory device is provided before a page which takes less time to write. Overall programming time for the recording unit is reduced since a greater degree of parallel processing occurs. While the page which takes longer to program is being programmed to the memory array, the page which takes less time to program is being transferred to the memory device. After programming is completed, the memory device signals the host to transfer a next recording unit. The pages of data may include lower, middle and upper pages.

    Abstract translation: 在非易失性存储系统中的编程数据传输过程中，数据的记录单元从主机传送到诸如存储卡的存储设备。 对于每个记录单元，数据页按照这样的顺序排列，使得在写入时间较少的页面之前提供需要更长时间写入存储器件的存储器阵列的页面。 由于发生更大程度的并行处理，记录单元的整体编程时间减少。 当将编程所需的时间更长的页面编程到存储器阵列时，将编程所需的较少时间的页面传送到存储器件。 编程完成后，存储器信号通知主机传送下一个记录单元。 数据页可以包括下页，中页和上页。

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