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公开(公告)号：US09646874B1
公开(公告)日：2017-05-09
申请号：US13959136
申请日：2013-08-05
Applicant: Sandia Corporation
Inventor： Kenneth Wojciechowski , Roy H. Olsson , Peggy J. Clews , Todd Bauer
IPC: H01L21/00 , H01L21/764 , H01L29/06 , H01L21/762
CPC classification number: H01L21/823481 , B81C1/00 , H01L21/02178 , H01L21/02532 , H01L21/02592 , H01L21/30604 , H01L21/31111 , H01L21/3213 , H01L21/762 , H01L21/764 , H01L21/84 , H01L23/34 , H01L27/12 , H01L29/0649 , H03H3/02 , H03H2009/02181
Abstract: Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
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公开(公告)号：US20170054432A1
公开(公告)日：2017-02-23
申请号：US15349593
申请日：2016-11-11
Applicant: Sandia Corporation
Inventor： Roy H. Olsson , Thomas A. Friedmann , Sara Jensen Homeijer , Michael Wiwi , Khalid Mikhiel Hattar , Blythe Clark , Todd Bauer , Stuart B. Van Deusen
CPC classification number: H03H9/54 , H03H3/02 , H03H9/02228 , H03H9/17 , H03H9/205 , H03H2003/027
Abstract: The present invention relates to a single crystal micromechanical resonator. In particular, the resonator includes a lithium niobate or lithium tantalate suspended plate. Also provided are improved microfabrication methods of making resonators, which does not rely on complicated wafer bonding, layer fracturing, and mechanical polishing steps. Rather, the methods allow the resonator and its components to be formed from a single crystal.
Abstract translation: 本发明涉及单晶微机械谐振器。 特别地，谐振器包括铌酸锂或钽酸锂悬浮板。 还提供了制造谐振器的改进的微细加工方法，其不依赖于复杂的晶片接合，层压裂和机械抛光步骤。 相反，这些方法允许谐振器及其部件由单晶形成。
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公开(公告)号：US09525398B1
公开(公告)日：2016-12-20
申请号：US14288236
申请日：2014-05-27
Applicant: Sandia Corporation
Inventor： Roy H. Olsson , Thomas A. Friedmann , Sara Jensen Homeijer , Michael Wiwi , Khalid Mikhiel Hattar , Blythe Clark , Todd Bauer , Stuart B. Van Deusen
CPC classification number: H03H9/54 , H03H3/02 , H03H9/02228 , H03H9/17 , H03H9/205 , H03H2003/027
Abstract: The present invention relates to a single crystal micromechanical resonator. In particular, the resonator includes a lithium niobate or lithium tantalate suspended plate. Also provided are improved microfabrication methods of making resonators, which does not rely on complicated wafer bonding, layer fracturing, and mechanical polishing steps. Rather, the methods allow the resonator and its components to be formed from a single crystal.
Abstract translation: 本发明涉及单晶微机械谐振器。 特别地，谐振器包括铌酸锂或钽酸锂悬浮板。 还提供了制造谐振器的改进的微细加工方法，其不依赖于复杂的晶片接合，层压裂和机械抛光步骤。 相反，这些方法允许谐振器及其部件由单晶形成。
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公开(公告)号：US20150052364A1
公开(公告)日：2015-02-19
申请号：US14494306
申请日：2014-09-23
Applicant: Sandia Corporation
Inventor： Nathan J. Edwards , Jason Hamlet , Todd Bauer , Ryan Helinski
CPC classification number: H04L9/3247 , G06F11/27 , G06F21/556 , G06F21/558 , G06F21/75 , G06F21/85 , G09C1/00 , H01L23/57 , H01L2924/0002 , H04L9/003 , H04L9/0869 , H04L9/3278 , H04L2209/12 , H04L2209/72 , H01L2924/00
Abstract: An apparatus for increasing security in inter-chip communication includes a sending control module, a communication bus, and a receiving control module. The communication bus is coupled between the sending control module and the receiving control module. The sending control module operates to send data on the communication bus, disable the communication bus when threats are detected, or both.
Abstract translation: 一种用于提高芯片间通信的安全性的装置包括发送控制模块，通信总线和接收控制模块。 通信总线耦合在发送控制模块和接收控制模块之间。 发送控制模块用于在通信总线上发送数据，当检测到威胁时禁用通信总线，或两者兼而有之。
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公开(公告)号：US09824932B1
公开(公告)日：2017-11-21
申请号：US15234932
申请日：2016-08-11
Applicant: Sandia Corporation
Inventor： Kenneth Wojciechowski , Roy Olsson , Peggy J. Clews , Todd Bauer
IPC: H01L21/02 , B81C1/00 , B81B7/00 , H01L21/8234 , H01L21/311 , H01L21/306 , H01L21/84 , H01L21/762 , H01L21/3213 , H01L21/764 , H01L23/34 , H01L21/48 , H01L41/047
CPC classification number: H01L21/823481 , B81C1/00 , H01L21/02178 , H01L21/02532 , H01L21/02592 , H01L21/30604 , H01L21/31111 , H01L21/3213 , H01L21/762 , H01L21/764 , H01L21/84 , H01L23/34 , H01L27/12 , H01L29/0649 , H03H3/02 , H03H2009/02181
Abstract: Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
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Patent Agency Ranking
6.发明授权Three-dimensional stacked structured ASIC devices and methods of fabrication thereof 有权三维堆叠结构化ASIC器件及其制造方法公开(公告)号：US09190392B1
公开(公告)日：2015-11-17
申请号：US14283101
申请日：2014-05-20
Applicant: Sandia Corporation
Inventor： Subhash L. Shinde , John Teifel , Richard S. Flores , Robert L. Jarecki, Jr. , Todd Bauer
IPC: H01L23/48 , H01L25/065 , H01L23/538 , H01L23/00 , H01L27/02 , H01L27/06
CPC classification number: H01L25/0657 , H01L21/76898 , H01L23/481 , H01L23/5384 , H01L24/89 , H01L27/0207 , H01L27/0688 , H01L27/11807 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2924/0002 , H01L2924/00
Abstract: A 3D stacked sASIC is provided that includes a plurality of 2D reconfigurable structured structured ASIC (sASIC) levels interconnected through hard-wired arrays of 3D vias. The 2D sASIC levels may contain logic, memory, analog functions, and device input/output pad circuitry. During fabrication, these 2D sASIC levels are stacked on top of each other and fused together with 3D metal vias. Such 3D vias may be fabricated as through-silicon vias (TSVs). They may connect to the back-side of the 2D sASIC level, or they may be connected to top metal pads on the front-side of the 2D sASIC level.
Abstract translation: 提供了一种3D堆叠sASIC，其包括通过3D通孔的硬连线阵列互连的多个2D可重构结构化结构化ASIC（sASIC）级。 2D sASIC电平可能包含逻辑，存储器，模拟功能和器件输入/输出焊盘电路。 在制造过程中，这些2D sASIC水平层叠在一起，并与3D金属通孔熔合在一起。 这种3D通孔可以被制造为通硅通孔（TSV）。 它们可以连接到2D sASIC电平的背面，或者它们可以连接到2D sASIC电平前面的顶部金属焊盘。
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公开(公告)号：US09116249B1
公开(公告)日：2015-08-25
申请号：US14192688
申请日：2014-02-27
Applicant: Sandia Corporation
Inventor： Liam D. Claus , Mark S. Derzon , Randolph R. Kay , Todd Bauer , Douglas Chandler Trotter , Michael David Henry
CPC classification number: G01T1/16 , G01T1/2006 , G01T1/24 , G01T3/00 , G01T3/008 , G01T3/06 , G01T3/08
Abstract: An apparatus for detecting radiation is provided. In embodiments, at least one sensor medium is provided, of a kind that interacts with radiation to generate photons and/or charge carriers. The apparatus also includes at least one electrode arrangement configured to collect radiation-generated charge from a sensor medium that has been provided. The apparatus also includes at least one photodetector configured to produce an electrical output in response to photons generated by radiation in such a sensor medium, and an electronic circuit configured to produce an output that is jointly responsive to the collected charge and to the photodetector output. At least one such electrode arrangement, at least one such photodetector, and at least one such sensor medium are combined to form an integral unit.
Abstract translation: 提供了一种用于检测辐射的装置。 在实施例中，提供至少一种与辐射相互作用以产生光子和/或电荷载体的传感器介质。 该装置还包括配置成从已经提供的传感器介质收集辐射产生的电荷的至少一个电极装置。 该装置还包括至少一个光电检测器，其被配置为响应于在这种传感器介质中由辐射产生的光子而产生电输出;以及电子电路，被配置为产生联合响应所收集的电荷和光电检测器输出的输出。 至少一个这样的电极布置，至少一个这样的光电检测器和至少一个这样的传感器介质被组合以形成整体单元。
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公开(公告)号：US08874926B1
公开(公告)日：2014-10-28
申请号：US13782808
申请日：2013-03-01
Applicant: Sandia Corporation
Inventor： Nathan J. Edwards , Jason Hamlet , Todd Bauer , Ryan Helinski
CPC classification number: H04L9/3247 , G06F11/27 , G06F21/556 , G06F21/558 , G06F21/75 , G06F21/85 , G09C1/00 , H01L23/57 , H01L2924/0002 , H04L9/003 , H04L9/0869 , H04L9/3278 , H04L2209/12 , H04L2209/72 , H01L2924/00
Abstract: An apparatus for increasing security in inter-chip communication includes a sending control module, a communication bus, and a receiving control module. The communication bus is coupled between the sending control module and the receiving control module. The sending control module operates to send data on the communication bus, disable the communication bus when threats are detected, or both.
Abstract translation: 一种用于提高芯片间通信的安全性的装置包括发送控制模块，通信总线和接收控制模块。 通信总线耦合在发送控制模块和接收控制模块之间。 发送控制模块用于在通信总线上发送数据，当检测到威胁时禁用通信总线，或两者兼而有之。
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公开(公告)号：US09641154B2
公开(公告)日：2017-05-02
申请号：US15349593
申请日：2016-11-11
Applicant: Sandia Corporation
Inventor： Roy H. Olsson , Thomas A. Friedmann , Sara Jensen Homeijer , Michael Wiwi , Khalid Mikhiel Hattar , Blythe Clark , Todd Bauer , Stuart B. Van Deusen
CPC classification number: H03H9/54 , H03H3/02 , H03H9/02228 , H03H9/17 , H03H9/205 , H03H2003/027
Abstract: A single crystal micromechanical resonator includes a suspended plate of lithium niobate or lithium tantalate. The suspended plate and a support structure are formed from a single crystal.
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公开(公告)号：US09484216B1
公开(公告)日：2016-11-01
申请号：US14728810
申请日：2015-06-02
Applicant: Sandia Corporation
Inventor： Todd Bauer , Andrew John Gross , Peggy J. Clews , Roy H. Olsson
IPC: H01L21/3065 , H01L41/332 , H01L41/331 , H01L41/18 , H01L21/308 , H01L21/311 , H01L21/3213
CPC classification number: H01L21/3065 , H01L21/308 , H01L21/31116 , H01L21/31122 , H01L21/32136 , H01L21/32139 , H01L41/332 , H03H2003/021 , H03H2009/155
Abstract: The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl3, a common additive.
Abstract translation: 本发明提供了蚀刻这种氮化铝谐振器的半导体器件的方法。 这里的方法允许具有改进的蚀刻轮廓的装置，使得可以获得几乎垂直的侧壁。 在一些实例中，该方法采用干蚀刻步骤，其中初始蚀刻剂气体省略了常见的添加剂BCl3。
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