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26 条记录 (耗时 0.026 秒)

    Organic thin film transistor comprising multi-layered gate insulator
    1.
    发明申请
    Organic thin film transistor comprising multi-layered gate insulator 有权
    包括多层栅极绝缘体的有机薄膜晶体管

    公开(公告)号：US20050001210A1

    公开(公告)日：2005-01-06

    申请号：US10769816

    申请日：2004-02-03

    申请人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Young Byun ,  Bon Koo ,  In Kang

    发明人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Young Byun ,  Bon Koo ,  In Kang

    IPC分类号： C08F212/14 ,  C08F222/40 ,  H01L21/312 ,  H01L21/316 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30 ,  H01L35/24

    CPC分类号： H01L51/0545 ,  H01L21/31604 ,  H01L21/31691 ,  H01L51/0052 ,  H01L51/0529 ,  H01L51/0537

    摘要： An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.

    摘要翻译： 一种有机薄膜晶体管（OTFT），包括栅极，栅极绝缘膜，有机活性层和源极/漏极，或栅电极，栅极绝缘膜，源/漏电极和有机活性层， 依次形成在基板上，其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体，第二层位于 有机活性层。 本发明的OTFT显示低阈值和驱动电压，高电荷迁移率和高离子/离子交换，并且可以通过湿法制备。

    Method of fabricating thin film transistor
    4.
    发明申请
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US20060094172A1

    公开(公告)日：2006-05-04

    申请号：US11142502

    申请日：2005-06-02

    申请人： Tae Lee ,  Young Byun ,  Yi Lyu ,  Sang Lee ,  Bon Koo

    发明人： Tae Lee ,  Young Byun ,  Yi Lyu ,  Sang Lee ,  Bon Koo

    IPC分类号： H01L21/84

    CPC分类号： H01L51/0021 ,  B82Y10/00 ,  H01L51/0015 ,  H01L51/0046 ,  H01L51/0545

    摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

    摘要翻译： 一种制造薄膜晶体管的方法，其中通过溶液工艺形成源极和漏极，因此包括在衬底上形成电极，形成绝缘体层和形成有机半导体层的所有阶段通过 解决过程。 在该方法中，简化了制造并降低了制造成本。 由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

    Vertical organic thin film transistor and organic light emitting transistor
    6.
    发明申请
    Vertical organic thin film transistor and organic light emitting transistor 审中-公开
    垂直有机薄膜晶体管和有机发光晶体管

    公开(公告)号：US20060145144A1

    公开(公告)日：2006-07-06

    申请号：US11229495

    申请日：2005-09-20

    申请人： Sang Lee ,  Bon Koo ,  In Kang ,  Chang Kim ,  Se Oh

    发明人： Sang Lee ,  Bon Koo ,  In Kang ,  Chang Kim ,  Se Oh

    IPC分类号： H01L29/08

    CPC分类号： H01L51/057 ,  H01L27/3244 ,  H01L51/0078 ,  H01L51/0097

    摘要： A vertical organic thin film transistor is provided along with an organic light-emitting transistor, which is characterized in that an active layer is formed of a p-type organic semiconductor compound having a dielectric constant of 3.5 or more, and work function values of an anode and a cathode are different from each other. The vertical organic thin film transistor is advantageous because it exhibits excellent current-voltage properties due to a short channel length, and has simple fabrication processes. Also, in the vertical organic thin film transistor, current properties in response to the gate voltage are of an enhancement type. Therefore, the vertical organic thin film transistor may be fabricated into the organic light-emitting transistor through a simple process.

    摘要翻译： 垂直有机薄膜晶体管与有机发光晶体管一起提供，其特征在于有源层由介电常数为3.5以上的p型有机半导体化合物形成，功函数值为 阳极和阴极彼此不同。 垂直有机薄膜晶体管是有利的，因为它由于沟道长度短而具有优异的电流 - 电压特性，并且制造工艺简单。 此外，在垂直有机薄膜晶体管中，响应于栅极电压的电流特性是增强型。 因此，垂直有机薄膜晶体管可以通过简单的工艺制造成有机发光晶体管。

    Organic insulator composition comprising high dielectric constant insulator dispersed in hyperbranched polymer and organic thin film transistor using the same
    7.
    发明申请
    Organic insulator composition comprising high dielectric constant insulator dispersed in hyperbranched polymer and organic thin film transistor using the same 有权
    包含分散在超支化聚合物中的高介电常数绝缘体和使用其的有机薄膜晶体管的有机绝缘体组合物

    公开(公告)号：US20060180809A1

    公开(公告)日：2006-08-17

    申请号：US11204102

    申请日：2005-08-16

    申请人： Jong Park ,  Hyun Park ,  Bon Koo ,  Sang Lee ,  Lyong Pu ,  Kakimoto Masaaki

    发明人： Jong Park ,  Hyun Park ,  Bon Koo ,  Sang Lee ,  Lyong Pu ,  Kakimoto Masaaki

    IPC分类号： H01L29/08

    CPC分类号： H01L21/02118 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/31691 ,  H01L51/0537 ,  Y10T428/25

    摘要： An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.

    摘要翻译： 一种有机绝缘体组合物，其包含分散在超支化聚合物中的高介电常数绝缘体和使用该绝缘体组合物的有机薄膜晶体管。 更具体地，有机薄膜晶体管包括基板，栅电极，栅极绝缘层，源电极，漏电极和有机半导体层，其中栅绝缘层由有机绝缘体组合物制成。 在形成栅极绝缘层中使用绝缘体组合物允许在室温下通过旋涂均匀地形成栅极绝缘层，并且能够制造同时满足高电荷载流子迁移率要求的有机薄膜晶体管 和低阈值电压。

    Method for fabricating organic thin film transistor by application of electric field
    9.
    发明申请
    Method for fabricating organic thin film transistor by application of electric field 有权
    通过施加电场制造有机薄膜晶体管的方法

    公开(公告)号：US20060177961A1

    公开(公告)日：2006-08-10

    申请号：US11196382

    申请日：2005-08-04

    申请人： Chang Kim ,  Eun Jeong ,  Sang Lee ,  Bon Koo ,  Eun Lee

    发明人： Chang Kim ,  Eun Jeong ,  Sang Lee ,  Bon Koo ,  Eun Lee

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0541 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0545

    摘要： A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.

    摘要翻译： 一种通过施加电场来制造有机薄膜晶体管的方法。 该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压 和漏电极，并向栅电极施加交流（AC）电压。 通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。 因此，通过该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高I / O比较的高电荷载流子迁移率。

    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
    10.
    发明申请
    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same 有权
    包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号：US20060151781A1

    公开(公告)日：2006-07-13

    申请号：US11296704

    申请日：2005-12-08

    申请人： Joo Kim ,  Eun Lee ,  Bang Lee ,  Bon Koo ,  Hyun Park ,  Sang Lee

    发明人： Joo Kim ,  Eun Lee ,  Bang Lee ,  Bon Koo ,  Hyun Park ,  Sang Lee

    IPC分类号： H01L29/08

    CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

    摘要翻译： 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。