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    Organic thin film transistor comprising multi-layered gate insulator
    1.
    发明申请
    Organic thin film transistor comprising multi-layered gate insulator 有权
    包括多层栅极绝缘体的有机薄膜晶体管

    公开(公告)号：US20050001210A1

    公开(公告)日：2005-01-06

    申请号：US10769816

    申请日：2004-02-03

    申请人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Young Byun ,  Bon Koo ,  In Kang

    发明人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Young Byun ,  Bon Koo ,  In Kang

    IPC分类号： C08F212/14 ,  C08F222/40 ,  H01L21/312 ,  H01L21/316 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30 ,  H01L35/24

    CPC分类号： H01L51/0545 ,  H01L21/31604 ,  H01L21/31691 ,  H01L51/0052 ,  H01L51/0529 ,  H01L51/0537

    摘要： An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.

    摘要翻译： 一种有机薄膜晶体管（OTFT），包括栅极，栅极绝缘膜，有机活性层和源极/漏极，或栅电极，栅极绝缘膜，源/漏电极和有机活性层， 依次形成在基板上，其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体，第二层位于 有机活性层。 本发明的OTFT显示低阈值和驱动电压，高电荷迁移率和高离子/离子交换，并且可以通过湿法制备。

    Method of fabricating thin film transistor
    4.
    发明申请
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US20060094172A1

    公开(公告)日：2006-05-04

    申请号：US11142502

    申请日：2005-06-02

    申请人： Tae Lee ,  Young Byun ,  Yi Lyu ,  Sang Lee ,  Bon Koo

    发明人： Tae Lee ,  Young Byun ,  Yi Lyu ,  Sang Lee ,  Bon Koo

    IPC分类号： H01L21/84

    CPC分类号： H01L51/0021 ,  B82Y10/00 ,  H01L51/0015 ,  H01L51/0046 ,  H01L51/0545

    摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

    摘要翻译： 一种制造薄膜晶体管的方法，其中通过溶液工艺形成源极和漏极，因此包括在衬底上形成电极，形成绝缘体层和形成有机半导体层的所有阶段通过 解决过程。 在该方法中，简化了制造并降低了制造成本。 由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

    Composition for forming dielectric film and method for forming dielectric film or pattern using the composition
    8.
    发明申请
    Composition for forming dielectric film and method for forming dielectric film or pattern using the composition 审中-公开
    用于形成介质膜的组合物和使用该组合物形成介电膜或图案的方法

    公开(公告)号：US20050090570A1

    公开(公告)日：2005-04-28

    申请号：US10808374

    申请日：2004-03-25

    申请人： Yi Lyu ,  Jin Yim ,  Jong Seon

    发明人： Yi Lyu ,  Jin Yim ,  Jong Seon

    IPC分类号： G03F7/075 ,  C08G77/04 ,  C08L71/02 ,  C08L83/04 ,  C09D5/25 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  G03F7/00 ,  G03F7/004 ,  H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31695

    摘要： A composition for forming a porous dielectric film which is prepared by dissolving a siloxane-based precursor containing hydroxyl groups or alkoxy groups and a pore-generating material together with a condensation catalyst generator capable of curing the siloxane-based resin precursor, in an organic solvent. The porous dielectric film has a low dielectric constant and improved physical properties and is formed by coating the composition onto a substrate, followed by light exposure to cause polycondensation at low temperature. A method for forming a negative pattern of a porous dielectric film is also provided without the use of a photoresist by exposing the coated film to light through a mask, and removing unexposed regions with a developing agent.

    摘要翻译： 一种用于形成多孔电介质膜的组合物，其通过将含有羟基或烷氧基的硅氧烷基前体和产生孔的材料与能够固化硅氧烷基树脂前体的缩合催化剂发生物一起在有机溶剂 。 多孔绝缘膜具有低的介电常数和改善的物理性能，并且通过将该组合物涂覆在基底上形成，随后进行曝光以在低温下引起缩聚。 还提供了形成多孔电介质膜的阴图形的方法，而不用光致抗蚀剂通过将掩模曝光通过掩模，并用显影剂除去未曝光的区域。