摘要:
Methods and apparatuses are provided for compensating for a temperature of a liquid crystal display (LCD) panel. The method includes selecting a lookup table corresponding to a detected temperature of the LCD panel from among lookup tables for a 3-dimensional (3D) display of the LCD panel; and adjusting luminance to be output to the LCD panel based on the selected lookup table.
摘要:
A method and apparatus for controlling a backlight unit of a three-dimensional (3D) display apparatus receiving a 3D video sequence is provided. The method includes determining the image brightness level of the 3D video sequence displayed on a liquid crystal display (LCD) unit, for each of a plurality of partial regions of the LCD unit to which a plurality of sub-blocks of the backlight unit emit light; determining turn-on times of the plurality of sub-blocks of the backlight unit, based on the image brightness of each of the partial regions of the LCD unit; and determining turn-on periods of the plurality of sub-blocks of the backlight unit by synchronizing with a switching period between a set including a left visual point frame and a right visual point frame of the 3D video sequence.
摘要:
An image display method includes alternately receiving left and right images of a 3D image; and turning on a backlight such that the backlight is on only in periods when the left images are displayed or only in periods when the right images are displayed. A method of controlling shutter glasses separately for left and right images of a three-dimensional (3D) image includes alternately receiving the left and right images of the 3D image; and opening two shutters of the shutter glasses only in periods when the left images are received or only in periods when the right images are received.
摘要:
A three-dimensional (3D) display panel, a 3D display apparatus using the same, and a driving method thereof are provided. The 3D display apparatus includes: an image display panel which displays an image; a phase shift panel which alternately shifts a polarization direction of light outputted from the image display panel; a backlight unit which provides a backlight; and a control unit which turns off the backlight unit during a crosstalk period where the phase shift panel performs the shift operation and to turn on the backlight unit for a stabilization period after the crosstalk period.
摘要:
A stereoscopic display apparatus includes a display panel which scans an image at a frame frequency that is an odd-numbered multiple of a field frequency, an image signal input unit which inputs an image signal to the display panel, a backlight unit which emits light to the display panel, and a shutter controller which controls an opening and a closing of a left eye shutter and a right eye shutter of shutter glasses.
摘要:
A method for driving a three dimensional (3D) display and a 3D display apparatus using the same are provided. The 3D display apparatus includes a storage unit which stores a received image; and a controller which compares a previous frame of the received image with a current frame of the received image, and determines whether or not to input an image of the current frame to a liquid crystal panel based on whether the previous frame is identical to the current frame. Therefore, a method for driving a 3D display which does not cause characteristics of a liquid crystal to be deteriorated and a 3D display apparatus using the same are provided.
摘要:
Provided is a backlight unit for a liquid crystal display device. The backlight unit includes: a chassis; a printed circuit board connected to a side of the chassis, the printed circuit board including a plurality of light emitting diodes, and a pair of conductive pads through which power is supplied to the light emitting diodes, wherein the pair of conductive pads are disposed on an end of the printed circuit board; and a power socket into which the pair of the conductive pads are inserted.
摘要:
A semiconductor memory device for reducing a precharge time is provided. The semiconductor memory device may include a sense amplifier, a precharge unit and an equalizing circuit. The sense amplifier may sense and amplify a difference between data transmitted through a first bit line and data transmitted through a second bit line in response to a sense amplifier enable signal. The precharge unit may precharge voltage levels of the first bit line and the second bit line to a precharge voltage level in response to a precharge enable signal. The equalizing circuit may be connected to the sense amplifier and the precharge unit and may control the voltage levels of the first bit line and the second bit line to be equal to each other in response to the sense amplifier enable signal. The semiconductor memory device may reduce a time required to perform a precharge operation and/or minimize an increase of the circuit size.
摘要:
A semiconductor integrated circuit designing method capable of minimizing a parasitic capacitance generated by an overhead in conductive lines, especially a gate line, a semiconductor integrated circuit according to the designing method, and a fabricating method thereof are provided. A method of designing a semiconductor integrated circuit having a FinFET architecture, includes: performing a pre-simulation of the semiconductor integrated circuit to be designed; designing a layout of components of the semiconductor integrated circuit based on a result of the pre-simulation, the components comprising first and second device areas and a first conductive line extending across the first and second device areas; modifying a first cutting area, that is arranged between the first and second device areas and electrically cuts the first conductive line, according to at least one design rule to minimize an overhead of the first conductive line created by the first cutting area.
摘要:
Semiconductor memory devices are provided which include an array of memory cells, an array of reference cells, and a plurality of sense amplifiers that are associated with respective of the memory cells. The reference cells have a first capacitor that is coupled to a first supply voltage, to a first complementary bit line associated with one of the memory cells and to a second complementary bit line that is associated with a different memory cell. The sense amplifiers are configured to sense and amplify the voltage difference between a signal on the first bit line and a signal on the first complementary bit line. These semiconductor memory devices may output bit cell data without a separate reference voltage generator.