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    LIGHT-EMITTING BODY, LIGHT-EMITTING LAYER, AND LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING BODY, LIGHT-EMITTING LAYER, AND LIGHT-EMITTING DEVICE 有权
    发光体，发光层和发光装置

    公开(公告)号：US20120205687A1

    公开(公告)日：2012-08-16

    申请号：US13370672

    申请日：2012-02-10

    申请人： Shunpei YAMAZAKI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Satoko SHITAGAKI ,  Hideko INOUE ,  Hiroshi KADOMA ,  Harue OSAKA ,  Kunihiko SUZUKI

    发明人： Shunpei YAMAZAKI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Satoko SHITAGAKI ,  Hideko INOUE ,  Hiroshi KADOMA ,  Harue OSAKA ,  Kunihiko SUZUKI

    IPC分类号： H01L51/52

    CPC分类号： H01L51/5016 ,  H01L51/504 ,  H01L2251/5384

    摘要： An organic light-emitting element having high efficiency and long lifetime is provided. An organic light-emitting body is provided which includes a host having a high electron-transport property (n-type host), a host having a high hole-transport property (p-type host), and a guest such as an iridium complex and in which the n-type host and the p-type host are located so as to be adjacent to each other. When an electron and a hole are injected to such a light-emitting body, the electron is trapped by the n-type host and the hole is trapped by the p-type host. Then, both the electron and the hole are injected to the guest, and thus the guest is brought into an excited state. In this process, less thermal deactivation occurs and the working rate of the guest is high; thus, highly efficient light emission can be obtained.

    摘要翻译： 提供了高效率且寿命长的有机发光元件。 提供一种有机发光体，其包括具有高电子传输性质的主体（n型主体），具有高空穴传输性质的主体（p型主体））和诸如铱络合物的客体 并且其中n型主机和p型主机位于彼此相邻的位置。 当向这种发光体注入电子和空穴时，电子被n型主体捕获，孔被p型主体捕获。 然后，将电子和孔都注入到客体中，从而使客人处于激发状态。 在这个过程中，发生较少的热失活，客人的工作速度很高; 因此，可以获得高效的发光。

    FILM DEPOSITION APPARATUS AND METHOD
    5.
    发明申请
    FILM DEPOSITION APPARATUS AND METHOD 审中-公开
    电影沉积装置和方法

    公开(公告)号：US20110200749A1

    公开(公告)日：2011-08-18

    申请号：US13020188

    申请日：2011-02-03

    申请人： Kunihiko SUZUKI ,  Masayoshi Yajima

    发明人： Kunihiko SUZUKI ,  Masayoshi Yajima

    IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/46

    CPC分类号： C23C16/4402 ,  C23C16/455 ,  C23C16/4585

    摘要： A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly.

    摘要翻译： 一个室在其上部包括一个气体入口，从该入口引入沉积气体。 腔室的内壁由圆柱形衬套覆盖，并且腔室容纳基座组件，放置半导体衬底。 衬套包括一个筒体部分，底座组件被放置在其中; 头部位于气体入口的正下方，水平横截面积小于桶部分; 以及连接筒部和头部的台阶部。 通过支撑柱将环板固定到基座来形成基座组件。 环板覆盖衬套的台阶部分的周边。 通过从气体入口向室内向下流动的沉积气体，在位于基座组件上的基板上形成结晶膜。

    Engine Control Device
    6.
    发明申请
    Engine Control Device 有权
    发动机控制装置

    公开(公告)号：US20100305832A1

    公开(公告)日：2010-12-02

    申请号：US12786903

    申请日：2010-05-25

    申请人： Seiji ASANO ,  Shingo KIMURA ,  Kenichi KOTABE ,  Kenji MIZUSHIMA ,  Kunihiko SUZUKI

    发明人： Seiji ASANO ,  Shingo KIMURA ,  Kenichi KOTABE ,  Kenji MIZUSHIMA ,  Kunihiko SUZUKI

    IPC分类号： F02D41/04 ,  F01L1/34 ,  F02P5/04

    CPC分类号： F02D41/0002 ,  F02D13/0219 ,  F02D41/18 ,  F02D2041/001 ,  F02D2200/0402 ,  F02D2200/0408 ,  F02M26/01 ,  F02P5/1504 ,  Y02T10/18 ,  Y02T10/42 ,  Y02T10/46

    摘要： There is provided an engine control device which can accurately calculate a compensation coefficient used for transient compensation of an ignition timing without involving a complicated and large-scale calculation model in order to prevent a combustion deterioration and the like caused by a mechanical response delay and the like of the variable valve timing mechanism at a transition time such as an acceleration/deceleration time. The angular difference between each current real phase of the intake/exhaust valves 21 and 22 and a target phase set based on an engine load equivalent amount such as an intake air amount is obtained; the shift amount or its correlation value between a current real intake air amount and a theoretical intake air amount value calculated using a pressure inside an intake manifold when each phase of the intake/exhaust valves has reached the target phase is obtained; further a compensation coefficient for matching the shift amount or its correlation value with the angular difference is obtained; and the compensation coefficient is used to perform transient compensation of an ignition timing.

    摘要翻译： 提供了一种发动机控制装置，其可以精确地计算用于点火正时的瞬时补偿的补偿系数，而不涉及复杂的大型计算模型，以便防止由机械响应延迟引起的燃烧劣化等， 类似于可变气门正时机构在诸如加速/减速时间的转变时间。 获得进气/排气门21和22的每个电流实际相位与基于诸如进气量之类的发动机负载当量量设定的目标相位之间的角度差; 获得当进气/排气阀的各相达到目标相位时，使用进气歧管内的压力计算出的当前实际进气量与理论进气量值之间的偏移量或其相关值; 获得用于使偏移量或其相关值与角度差匹配的补偿系数; 并且使用补偿系数来执行点火正时的瞬时补偿。

    CONTROL DEVICE OF INTERNAL COMBUSTION ENGINE
    7.
    发明申请
    CONTROL DEVICE OF INTERNAL COMBUSTION ENGINE 有权
    内燃机控制装置

    公开(公告)号：US20130024088A1

    公开(公告)日：2013-01-24

    申请号：US13551401

    申请日：2012-07-17

    申请人： Kunihiko SUZUKI ,  Toshio Hori ,  Koji Matsufuji ,  Kenji Takada ,  Heikichi Kamoshita ,  Hiroshi Sekine

    发明人： Kunihiko SUZUKI ,  Toshio Hori ,  Koji Matsufuji ,  Kenji Takada ,  Heikichi Kamoshita ,  Hiroshi Sekine

    IPC分类号： F02D41/26 ,  F02D43/04

    CPC分类号： F02D41/1494 ,  F02D41/062 ,  F02D41/1445 ,  F02D41/1446 ,  F02D2041/1433 ,  F02D2041/1472

    摘要： Control device of an internal combustion engine that determines whether or not to perform sensor element heating control of an air-fuel ratio sensor with high accuracy based on the mass of condensed water in an exhaust pipe. The control device computes the rate of change of condensed water mass in an exhaust pipe based on the saturated water vapor pressure and the water vapor partial pressure of exhaust gas, and computes the rate of change of evaporation mass in the exhaust pipe based on the amount of heat which the condensed water receives in the exhaust pipe. The control device updates the mass of condensed water based on the rate of change of condensed water mass and the rate of change of evaporation mass, and determines whether or not to perform heating control by a heating controlling unit based on the updated mass of condensed water.

    摘要翻译： 内燃机的控制装置，其基于排气管中的冷凝水的质量，判定是否以高精度进行空燃比传感器的传感器元件加热控制。 控制装置基于饱和水蒸气压和排气的水蒸汽分压来计算排气管中的冷凝水质量的变化率，并且基于排气管的蒸发量的变化率来计算蒸发量的变化率 冷凝水在排气管中受到的热量。 控制装置基于冷凝水质量的变化率和蒸发质量的变化率来更新冷凝水的质量，并且基于更新的冷凝水质量来确定是否由加热控制单元进行加热控制 。

    Manufacturing Apparatus and Method for Semiconductor Device
    8.
    发明申请
    Manufacturing Apparatus and Method for Semiconductor Device 审中-公开
    半导体器件的制造装置和方法

    公开(公告)号：US20120244685A1

    公开(公告)日：2012-09-27

    申请号：US13421901

    申请日：2012-03-16

    申请人： Kunihiko SUZUKI ,  Shinichi MITANI

    发明人： Kunihiko SUZUKI ,  Shinichi MITANI

    IPC分类号： H01L21/20 ,  C23C16/52 ,  C23C16/455

    CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/45561 ,  H01L21/6719

    摘要： A semiconductor manufacturing apparatus includes: a plurality of reaction chambers into which wafers are introduced and deposition process is performed; a material gas supply mechanism that includes a plurality of material gas supply lines that respectively supply a material gas to the plurality of reaction chambers and a flow rate control mechanism that controls a flow rate of the marital gas in the material gas supply lines; a carrier gas supply mechanism that includes a plurality of carrier gas supply lines that respectively supplies a carrier gas into the plurality of reaction chambers; and a material gas switching mechanism that intermittently opens and closes the plurality of material gas supply lines respectively so that at least one of the plurality of material gas supply lines comes to be in an opened state at a same time, and sequentially switches the reaction chamber to which the material gas is supplied.

    摘要翻译： 半导体制造装置包括：多个反应室，其中引入晶片并进行沉积处理; 材料气体供给机构，其包括分别向多个反应室供给原料气体的多个原料气体供给管线和控制所述原料气体供给管路中的所述结婚气体的流量的流量控制机构; 载气供给机构，其包括分别将载气供给到所述多个反应室中的多个载气供给管线; 以及分别间歇地打开和关闭多个原料气体供给管线的材料气体切换机构，使得多个原料气体供给管线中的至少一个同时进入打开状态，并且依次切换反应室 供应原料气体。

    MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE
    9.
    发明申请
    MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE 有权
    制造设备和半导体器件的方法

    公开(公告)号：US20120184054A1

    公开(公告)日：2012-07-19

    申请号：US13350102

    申请日：2012-01-13

    申请人： Kunihiko SUZUKI ,  Hironobu HIRATA

    发明人： Kunihiko SUZUKI ,  Hironobu HIRATA

    IPC分类号： H01L21/205 ,  C23C16/52 ,  C23C16/455

    CPC分类号： C23C16/4401 ,  C23C16/24 ,  C23C16/4412

    摘要： Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.

    摘要翻译： 提供一种半导体制造装置，包括：反应室，包括气体供给入口和排气出口，并且其中将引入晶片; 处理气体供给机构，其从所述反应室的气体供给口向所述反应室供给处理气体; 晶片保持构件，其布置在所述反应室中并保持所述晶片; 将由晶片保持构件保持的晶片加热到预定温度的加热器; 旋转驱动控制机构，其使晶片保持构件与晶片一起旋转; 气体排出机构，其从反应室的排气口排出反应室中的气体; 以及设置在反应室内的壁面附近的底部并排出从壁面滴下的油性硅烷的排水管。

    APPARATUS AND METHOD FOR FILM DEPOSITION
    10.
    发明申请
    APPARATUS AND METHOD FOR FILM DEPOSITION 审中-公开
    电影沉积的装置和方法

    公开(公告)号：US20110064878A1

    公开(公告)日：2011-03-17

    申请号：US12884652

    申请日：2010-09-17

    申请人： Kunihiko SUZUKI ,  Shinichi Mitani

    发明人： Kunihiko SUZUKI ,  Shinichi Mitani

    IPC分类号： C23C16/46 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C30B25/10 ,  C30B29/06 ,  H01L21/67103 ,  H01L21/68792

    摘要： A deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; an electrically-conductive busbar 123 for supporting the heater 121; and an electrode assembly 107 having a hollow rod electrode 108 with upper and lower openings for conducting electricity to the heater 121 and a connector 124, secured to the busbar 123, for connecting the busbars 123 to the rod electrode 108. Wafer heating by the heater 121 is conducted while a purge gas 117 is fed from the lower opening of the rod electrode 108 so that the purge gas 117 can flow through the upper opening of the rod electrode 108 and through a clearance 131 that is located at the joint surface between the busbar 123 and the connector 124 and communicates with the upper opening of the rod electrode 108.

    摘要翻译： 沉积装置100包括：用于加热硅晶片101的加热器121; 用于支撑加热器121的导电母线123; 以及具有中空棒电极108的电极组件107，其具有用于向加热器121传导电力的上开口和下开口以及固定到母线123的用于将汇流条123连接到杆电极108的连接器124.加热器的晶片加热 在吹扫气体117从棒状电极108的下部开口供给的同时进行吹扫气体117，使得吹扫气体117能够流过杆状电极108的上部开口，并通过位于 母线123和连接器124，并与杆状电极108的上部开口连通。