摘要:
The invention provides a shift control apparatus of a working vehicle in which an excellent shift operability can be obtained without reference to an incline of a travelling road, a loading amount and a road condition without necessity of learning a time for controlling an engine. Accordingly, a controller outputs a command for setting a hydraulic pressure (Pn) of a clutch before a shift operation to 0 value at a time of starting the shift operation and a command for making a hydraulic pressure (Pa) of a clutch after the shift operation be gradually increased in point of time to an electromagnetic proportional control valve (16), changes a fuel injection amount command signal (Fi) to a fuel injection apparatus (19) from an accelerator injection amount signal (THo) on the basis of an accelerator pedal operating amount to a synchronous injection amount signal (THc) for controlling an engine rotational speed so that an absolute value of an input shaft conversion relative speed (Nr) is reduced, and changes the fuel injection amount command signal (Fi) from the synchronous injection amount signal (THc) to the accelerator injection amount signal (THo) when the absolute value of the input shaft conversion relative speed becomes smaller than a predetermined threshold (dNr).
摘要:
An automatic retarder controller for a vehicle, which can prevent overheating, and can more precisely control the vehicle speed to remain constant. For this purpose, in the automatic retarder controller which is mounted on a load-carrying vehicle together with a cooled retarder (31) for exerting a braking force in response to a driving signal, and which automatically controls the driving signal so that the slope descending speed of the vehicle remains nearly constant, a detector for detecting the loading weight of the vehicle is included, and the controller impresses the gain corresponding to the detected loading weight upon the driving signal while the controller controls the vehicle speed to remain constant.
摘要:
Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0
摘要翻译:将种子以规则的图案植入到下衬底上。 在(1≤y≤1,0≤x≤1,0<= x <=1,0,0≤y≤1,0< x + y <= 1)混合晶体通过小平面生长法在种植植入的底物上生长。 小面生长使种子凹陷在种子上方。 小面从相邻区域组装到底坑的位错,并在底面下方形成闭合缺陷积聚区域(H)。 闭合缺陷积聚区(H)永久性停滞位错。 释放位错,径向平面缺陷组件和线性缺陷组件被禁止。 周围伴随的低位错单晶区(Z)和超低位错单晶区(Y)是位错密度单晶。
摘要:
Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0
摘要翻译:将种子以规则的图案植入到下衬底上。 在(1≤y≤1,0≤x≤1,0<= x <=1,0,0≤y≤1,0< x + y <= 1)混合晶体通过小平面生长法在种植植入的底物上生长。 小面生长使种子凹陷在种子上方。 小面从相邻区域组装到底坑的位错,并在底面下方形成闭合缺陷积聚区域(H)。 闭合缺陷积聚区(H)永久性停滞位错。 释放位错,径向平面缺陷组件和线性缺陷组件被禁止。 周围伴随的低位错单晶区(Z)和超低位错单晶区(Y)是位错密度单晶。
摘要:
Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦×≦1, 0≦y≦1, 0
摘要翻译:将种子以规则的图案植入到下衬底上。 在(1≤y≤1,0≤x≤1,0<= x <=1,0,0≤y≤1,0< x + y <= 1)混合晶体通过小平面生长法在种植植入的底物上生长。 小面生长使种子凹陷在种子上方。 小面从相邻区域组装到底坑的位错,并在底面下方形成闭合缺陷积聚区域(H)。 闭合缺陷积聚区(H)永久性停滞位错。 释放位错,径向平面缺陷组件和线性缺陷组件被禁止。 周围伴随的低位错单晶区(Z)和超低位错单晶区(Y)是位错密度单晶。