公开(公告)号：US4966869A

公开(公告)日：1990-10-30

申请号：US519538

申请日：1990-05-04

申请人： Joseph T. Hillman ,  J. B. Price ,  William M. Triggs

发明人： Joseph T. Hillman ,  J. B. Price ,  William M. Triggs

IPC分类号： C23C16/42 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205

CPC分类号： C23C16/42 ,  H01L21/28518 ,  H01L21/32053 ,  Y10S148/147

摘要： Tungsten disilicide (WSi.sub.x) films are deposited onto doped or undoped polysilicon by reducing WF.sub.6 with a mixture of dichlorosilane (SiH.sub.2 Cl.sub.2) and disilane (Si.sub.2 H.sub.6). The addition of disilane provides a mechanism for increasing the resistivity (silicon to tungsten ratio) of the film without adversely affecting the uniformity or deposition rate of the film. A high silicon to tungsten ratio prevents degradation of the silicide film and the underlaying polysilicon film during subsequent growth of an oxide (SiO.sub.2) dielectric. The excess silicon in the film also provides desirable etching and annealing characteristics.

摘要翻译： 通过用二氯硅烷（SiH 2 Cl 2）和乙硅烷（Si 2 H 6）的混合物还原WF 6，将二硅化钨（WSix）膜沉积到掺杂或未掺杂的多晶硅上。 添加乙硅烷提供了提高膜的电阻率（硅与钨比）的机理，而不会不利地影响膜的均匀性或沉积速率。 高硅比可以防止在氧化物（SiO 2）电介质的后续生长期间硅化物膜和底层多晶硅膜的劣化。 膜中的多余的硅还提供了理想的蚀刻和退火特性。

公开(公告)号：US07307019B2

公开(公告)日：2007-12-11

申请号：US10711649

申请日：2004-09-29

申请人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph T. Hillman ,  Bentley Palmer

发明人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph T. Hillman ,  Bentley Palmer

IPC分类号： H01L21/302

CPC分类号： H01L21/76826 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/32051 ,  H01L21/76814

摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。

公开(公告)号：US06548112B1

公开(公告)日：2003-04-15

申请号：US09442930

申请日：1999-11-18

申请人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

发明人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

IPC分类号： C23C1618

CPC分类号： C23C16/4486

摘要： A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

摘要翻译： CVD反应器设置有与反应器室一体地连接的前体输送系统。 优选在惰性吹扫气体的帮助下，诸如铜或其它金属 - 有机前体的液体前体在高流量蒸发器的入口处被雾化。 当处于不稳定的液体状态时，液体前体保持在室温或室温以下。 在蒸发器中，引入热量以均匀加热雾化的前体。 蒸发的前体进入扩散器，其将蒸气直接或通过喷头扩散到反应室中。

公开(公告)号：US06508919B1

公开(公告)日：2003-01-21

申请号：US09723874

申请日：2000-11-28

申请人： Thomas J. Licata ,  Joseph T. Hillman

发明人： Thomas J. Licata ,  Joseph T. Hillman

IPC分类号： C23C1434

CPC分类号： H01L21/76831 ,  H01L21/76846 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming diffusion barrier stacks on a dielectric for a dual damascene metal chip-level interconnect, and a diffusion barrier stack produced thereby. Alternating layers of a metal and an electrically resistive diffusion barrier are deposited on a dielectric substrate, with different layers having different thicknesses appropriate to their functions in the device. In an example of the present invention, alternating layers of tantalum and tantalum nitride are deposited on a dielectric substrate.

摘要翻译： 在用于双镶嵌金属芯片级互连的电介质上形成扩散阻挡层的方法，以及由此产生的扩散阻挡叠层。 金属和电阻扩散阻挡层的交替层沉积在电介质基底上，其中不同的层具有不同于其在器件中的功能的厚度。 在本发明的一个实例中，钽和氮化钽的交替层沉积在电介质基片上。

公开(公告)号：US06471782B1

公开(公告)日：2002-10-29

申请号：US09447985

申请日：1999-11-23

申请人： Ching-Ping Fang ,  Joseph T. Hillman

发明人： Ching-Ping Fang ,  Joseph T. Hillman

IPC分类号： C23C1600

CPC分类号： C23C16/18 ,  C23C16/4486

摘要： A chemical vapor deposition (CVD) apparatus for depositing a low vapor pressure copper precursor onto a silicon wafer. The CVD apparatus includes a CVD reaction chamber with an interior containing a substrate holder adapted to support a substrate, such as a silicon wafer, at a predetermined position within the CVD reaction chamber. An ultrasonic nebulizer is operatively connected to the CVD reaction chamber and is adapted to connect to a source of liquid precursor. The ultrasonic nebulizer has an atomizing discharge end adapted to atomize the liquid precursor and deposit the atomized precursor onto a substrate supported by the substrate holder. A gas distribution ring is disposed within the interior of the CVD reaction chamber for discharging a directionally oriented gas into the atomized precursor to direct the atomized precursor toward the substrate. Additional embodiments and methods for depositing the precursor are described.

摘要翻译： 一种用于将低蒸气压铜前体沉积到硅晶片上的化学气相沉积（CVD）装置。 CVD装置包括CVD反应室，其具有适于在CVD反应室内的预定位置处支撑诸如硅晶片的衬底的衬底保持器。 超声雾化器可操作地连接到CVD反应室，并适于连接到液体前体源。 超声雾化器具有适于雾化液体前体并将雾化的前体沉积在由衬底保持器支撑的衬底上的雾化放电端。 气体分配环设置在CVD反应室的内部，用于将定向取向的气体排放到雾化的前体中，以将雾化的前体引向基板。 描述了用于沉积前体的另外的实施方案和方法。

公开(公告)号：US6093645A

公开(公告)日：2000-07-25

申请号：US965658

申请日：1997-11-06

申请人： Michael S. Ameen ,  Joseph T. Hillman ,  Douglas A. Webb

发明人： Michael S. Ameen ,  Joseph T. Hillman ,  Douglas A. Webb

IPC分类号： H01L21/285 ,  C23C8/02 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/00 ,  H01L21/28 ,  H01L21/768

CPC分类号： H01L21/76856 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/322 ,  C23C28/34 ,  C23C28/3455 ,  C23C8/02 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/28518

摘要： An effective barrier layer to chemical attack of fluorine during chemical vapor deposition of tungsten from a tungsten fluoride source gas is fabricated by the present invention. A titanium nitride conformal barrier film can be formed by in-situ nitridation of a thin titanium film. The substrate is placed in a module wherein the pressure is reduced and the temperature raised to 350.degree. C. to about 700.degree. C. A titanium film is then deposited by plasma-enhanced chemical vapor deposition of titanium tetrahalide and hydrogen. This is followed by formation of titanium nitride on the titanium film by subjecting the titanium film to an nitrogen containing plasma such as an ammonia, an N.sub.2 or an NH.sub.3 /N.sub.2 based plasma. Tungsten is then deposited on the film of titanium nitride by plasma-enhanced chemical vapor deposition. All the titanium deposition and nitridation steps may be conducted in the same processing module without removing the substrate from the module until the reaction steps are completed. The tungsten deposition step may be preformed in a separate processing module or in the module used to deposit and process the titanium.

摘要翻译： 通过本发明制造在氟化钨源气体的钨的化学气相沉积期间氟的化学侵蚀的有效阻挡层。 可以通过钛钛薄膜的原位氮化形成氮化钛保形膜。 将衬底放置在其中压力降低并且温度升高到350℃至约700℃的模块中。然后通过等离子体增强化学气相沉积四卤化钛和氢气沉积钛膜。 然后，通过使钛膜经受含氮等离子体，例如氨，N 2或NH 3 / N 2等离子体，在钛膜上形成氮化钛。 然后通过等离子体增强化学气相沉积将钨沉积在氮化钛的膜上。 所有的钛沉积和氮化步骤可以在相同的处理模块中进行，而不需要从模块中去除衬底，直到反应步骤完成。 钨沉积步骤可以在单独的处理模块中或在用于沉积和处理钛的模块中预成型。

公开(公告)号：US5866213A

公开(公告)日：1999-02-02

申请号：US899500

申请日：1997-07-19

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23C16/04 ,  C23C16/14 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/56 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L51/30 ,  B05D3/06

CPC分类号： C23C16/45504 ,  C23C16/04 ,  C23C16/045 ,  C23C16/14 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/5096 ,  H01L21/28556

摘要： A method for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.

摘要翻译： 通过在基本上低于常规热CVD温度的温度下通过等离子体增强化学气相沉积在衬底上沉积膜的方法包括将衬底放置在反应室内并激发衬底上游的第一气体以产生第一气体的活性自由基 。 衬底在沉积室内旋转以产生泵送作用，其将第一气体自由基的气体混合物吸引到衬底表面。 第二气体靠近衬底供应以与第一气体的活化自由基混合，并且混合物在衬底处产生表面反应以沉积膜。 泵送动作以层流将气体混合物下拉到衬底表面以减少再循环和自由基重组，使得在衬底表面上可以获得足够量的自由基参与表面反应。 另一种方法利用用RF能量偏置的气体分散喷头，以形成在靠近基板表面的浓缩等离子体中产生活化的自由基和离子的电极。 在本发明中使用的激活的等离子体气体自由基和离子向表面反应贡献能量，使得膜可以以传统热CVD技术所需的基本上较低的沉积温度沉积。 此外，这些物质的活化降低了完成表面反应所需的温度。 该方法特别适用于在低温下沉积含钛膜。

公开(公告)号：US5451258A

公开(公告)日：1995-09-19

申请号：US241184

申请日：1994-05-11

申请人： Joseph T. Hillman ,  W. Chuck Ramsey

发明人： Joseph T. Hillman ,  W. Chuck Ramsey

IPC分类号： B01J3/02 ,  C23C16/08 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/4485

摘要： Gas delivery apparatuses and methods utilize a housing containing three thermal zones through which a gas travels from a source to a reaction chamber. Reactant gases vaporized within the first thermal zone travel in a line through the succeeding thermal zones. In each successive thermal zone, the gas is heated at a higher temperature to prevent condensation within the line. The gas line is heated in the thermal zones by mounting in-line components to heater plates which are controlled to heat the in-line components at the temperatures associated with the thermal zone. The third thermal zone is heated at a substantially higher temperature than the first and second thermal zones in order to prevent formation of an adduct within the gas line. In one embodiment, the gas line extends into the reaction chamber through a heater block which uniformly heats the gas line at a temperature higher than temperatures of the thermal zones to further prevent condensation and prevent the formation of an adduct. In an alternative embodiment, a gas passage is integrally formed within the sidewall and cover of the reaction chamber.

摘要翻译： 气体输送装置和方法利用包含三个热区的壳体，气体通过该热区从源传播到反应室。 在第一热区内蒸发的反应物气体通过后续热区行进。 在每个连续的热区中，气体在较高的温度下被加热以防止管线内的冷凝。 气体管线通过将在线部件安装到加热器板上而在热区域中被加热，加热器板被控制以在与热区域相关联的温度下加热在线部件。 第三热区在比第一和第二热区高得多的温度下加热，以防止在气体管线内形成加合物。 在一个实施例中，气体管线通过加热器块延伸进入反应室，该加热器块在高于热区温度的温度下均匀地加热气体管线，以进一步防止冷凝并防止形成加合物。 在替代实施例中，气体通道一体地形成在反应室的侧壁和盖内。

公开(公告)号：US4496180A

公开(公告)日：1985-01-29

申请号：US515573

申请日：1983-07-20

申请人： Joseph T. Hillman ,  Michael B. Miller

发明人： Joseph T. Hillman ,  Michael B. Miller

IPC分类号： B65G47/91 ,  H01L21/683 ,  B66C1/02

CPC分类号： B65G47/91 ,  H01L21/6838

摘要： A vacuum operated apparatus is provided for releasably grasping and transporting a thin solid object or article (e.g. silicon semiconductor wafer). The apparatus has two fixed rigid arms joined together at their rear end to define a gap therebetween having an open end and closed end wherein the upper arm directs the thin solid object into the gap and toward the lower arm having a port communicating with the gap and an enclosed passage way connected to a vacuum source. A vacuum applied to the lower arm holds the object against the grasping surface of the lower arm. Silicon semiconductor wafers may be grasped and transported with the apparatus and more especially silicon semiconductor wafers can be deposited onto and removed from the surface of a barrel type susceptor of an epitaxial reactor with enhanced ease and reduced danger of scratching and breaking the wafer.

摘要翻译： 提供真空操作的装置用于可释放地抓握和输送薄的固体物体或制品（例如硅半导体晶片）。 该装置具有两个在它们的后端连接在一起的固定的刚性臂，以限定它们之间的间隙，其间具有开口端和封闭端，其中上臂将薄的固体物体引导到间隙中，并且朝着具有与间隙连通的端口的下臂 连接到真空源的封闭通道。 施加到下臂的真空将物体抵靠下臂的抓握表面。 硅半导体晶片可以利用该装置被抓住并传送，并且更具体地，硅半导体晶片可以更容易地沉积到外延反应器的桶式基座的表面上并从其移除，并降低划伤和破坏晶片的危险。

公开(公告)号：US08603217B2

公开(公告)日：2013-12-10

申请号：US13019239

申请日：2011-02-01

申请人： Yefim P. Sukhman ,  Christian J. Risser ,  Nathan H. Schuknecht ,  James W. Rabideau ,  Joseph T. Hillman

发明人： Yefim P. Sukhman ,  Christian J. Risser ,  Nathan H. Schuknecht ,  James W. Rabideau ,  Joseph T. Hillman

IPC分类号： B01D46/00

CPC分类号： B01D53/04 ,  B01D53/0446 ,  B01D2253/102

摘要： Embodiments of recirculating filtration and exhaust systems for material processing systems are disclosed herein. A material processing system configured in accordance with one embodiment includes an enclosure for processing a workpiece, the enclosure having an enclosure inlet and an enclosure outlet. The system also includes a first flow path fluidly coupled to the enclosure inlet and the enclosure outlet, and a first filtration assembly in the first flow path. The first filtration assembly draws airflow from the enclosure and returns the airflow to the enclosure. The system further includes a second flow path in fluid communication with the first flow path upstream from the enclosure inlet, and a second filtration assembly in the second flow path. The second filtration assembly draws airflow from the first flow path and returns airflow to the first flow path.

摘要翻译： 本文公开了用于材料处理系统的再循环过滤和排气系统的实施例。 根据一个实施例构造的材料处理系统包括用于处理工件的外壳，所述外壳具有外壳入口和外壳出口。 该系统还包括流体耦合到外壳入口和外壳出口的第一流路，以及第一流路中的第一过滤组件。 第一个过滤组件从外壳抽取气流并将气流返回到外壳。 该系统还包括与外壳入口上游的第一流动路径流体连通的第二流动路径和在第二流动路径中的第二过滤组件。 第二过滤组件从第一流动路径抽出气流并将气流返回到第一流动路径。