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公开(公告)号：US06525336B1
公开(公告)日：2003-02-25
申请号：US08463761
申请日：1995-06-05
申请人： Seiichi Kondo , Yasuo Wada , Tsuyoshi Uda , Tokuo Kure , Tsuneo Ichiguchi , Shinji Okazaki , Yoshimasa Murayama
发明人： Seiichi Kondo , Yasuo Wada , Tsuyoshi Uda , Tokuo Kure , Tsuneo Ichiguchi , Shinji Okazaki , Yoshimasa Murayama
IPC分类号： H01L2906
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , G11C11/34 , G11C19/00 , G11C2216/08 , H01L49/006 , H03K19/02
摘要： A superfine electronic device is disclosed, which is constructed by atomic fine lines having a structure in which a plurality of atoms are arranged on one or a plurality of straight lines, in a ring shape or on curves with a size of atomic level, and which includes elements for doping electrons and holes. Using these atomic fine lines, it is possible to integrate semiconductor elements utilizing pn junctions at an atomic level with a high density. A groove having a sufficiently small size is formed in an insulating film disposed on a substrate. Then, atoms or molecules are supplied on the substrate and in the groove, which and are heated to a temperature sufficiently high for moving the atoms or molecules during or after the supply thereof to form a quantum fine line at edge portions of the groove.
摘要翻译： 公开了一种超细电子器件，其由具有多个原子排列在一个或多个直线上的原子细线构成，具有环形或具有原子级尺寸的曲线，并且其中 包括用于掺杂电子和空穴的元件。 使用这些原子细线，可以利用高密度的原子级的pn结集成半导体元件。 在设置在基板上的绝缘膜中形成具有足够小尺寸的凹槽。 然后，原子或分子被提供在衬底和沟槽中，并且被加热到足够高的温度以在其供给期间或之后移动原子或分子，以在槽的边缘部分处形成量子细线。
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公开(公告)号：US6153500A
公开(公告)日：2000-11-28
申请号：US521921
申请日：2000-03-09
CPC分类号： H01L49/006 , Y10S438/962 , Y10S977/936
摘要： A fine wire is fabricated by supplying metal atoms to one row or a plurality of rows formed by extraction of terminated atoms or molecules to the surface of substance made non-conductive by terminating all dangling bonds on the surface thereof with atoms or molecules. The conductivity of the fine wire can be attained by supplying metal atoms larger in number to that required for just terminating dangling bonds formed by extraction of terminated atoms or molecules.
摘要翻译： 通过将金属原子提供到通过用终止的原子或分子的表面上的所有悬挂键而将终止的原子或分子提取到不导电的物质的表面形成的一行或多行中来制造细线。 细线的导电性可以通过提供数量更多的金属原子与通过提取封端的原子或分子形成的悬挂键刚刚终止所需的金属原子来实现。
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公开(公告)号：US6114762A
公开(公告)日：2000-09-05
申请号：US915730
申请日：1997-08-21
CPC分类号： H01L49/006 , Y10S438/962 , Y10S977/936
摘要： A fine wire is fabricated by supplying metal atoms to one row or a plurality of rows formed by extraction of terminated atoms or molecules at the surface of a substrate made non-conductive by terminating all dangling bonds on the surface thereof with atoms or molecules. The conductivity of the fine wire can be attained by supplying metal atoms larger in number to that required for just terminating dangling bonds formed by extraction of terminated atoms or molecules.
摘要翻译： 通过将金属原子提供给一行或多行，通过将通过用原子或分子终止其表面上的所有悬挂键而将通过提取不导电的衬底的表面上的封端的原子或分子提取而形成细线。 细线的导电性可以通过提供数量更多的金属原子与通过提取封端的原子或分子形成的悬挂键刚刚终止所需的金属原子来实现。
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公开(公告)号：US5003366A
公开(公告)日：1991-03-26
申请号：US542796
申请日：1990-06-25
IPC分类号： H01L29/73 , H01L21/331 , H01L29/06 , H01L29/10 , H01L29/201 , H01L29/70 , H01L29/72 , H01L29/737
CPC分类号： H01L29/7376 , H01L29/1004 , Y10S977/759 , Y10S977/936
摘要： The present invention provides a hetero-junction bipolar transistor (HBT) whichis so designed that the emitter injection efficiency is improved, the base transit time and base resistance are reduced and yet the lowering of the collector injection efficiency is suppressed, by forming at least one quantum well in a base region of the HBT and determining the width of one of the quantum levels formed in the quantum well and the energy in a barrier layer constituting the quantum well is within kT/2.
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公开(公告)号：US4559547A
公开(公告)日：1985-12-17
申请号：US444233
申请日：1982-11-24
IPC分类号： H01L21/265 , H01L21/338 , H01L27/06 , H01L29/778 , H01L29/80 , H01L29/812 , H01L29/78
CPC分类号： H01L29/80 , H01L27/0605 , H01L29/7783 , H01L29/7786 , H01L29/7787
摘要： The semiconductor device of the present invention is characterized by a device consisting of at least a heterojunction formed by the first semiconductor layer and the second semiconductor layer where the forbidden band gap of the said first semiconductor is smaller than that of the said second semiconductor, at least one pair of electrode regions connected electronically to the said first semiconductor and a means to control the carrier density in the said first semiconductor layer where the impurities are not included effectively in the region in the first semiconductor under the means to control the carriers and are included in the region adjacent to the said one pair of electrodes. The density of the impurities in these region are preferably be larger than 10.sup.16 cm.sup.-3.
摘要翻译： 本发明的半导体器件的特征在于，由至少由第一半导体层和第二半导体层形成的异质结构成的器件，其中所述第一半导体的禁带宽小于所述第二半导体的禁带宽， 电子地连接到所述第一半导体的至少一对电极区域和控制所述第一半导体层中的载流子密度的装置，其中杂质不被有效地包含在控制载流子的装置下的第一半导体区域中，并且分别是 包括在与所述一对电极相邻的区域中。 这些区域中杂质的密度优选大于1016cm-3。
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公开(公告)号：US4785340A
公开(公告)日：1988-11-15
申请号：US839349
申请日：1986-03-13
IPC分类号： H01L21/203 , H01L21/28 , H01L21/331 , H01L21/335 , H01L29/10 , H01L29/15 , H01L29/732 , H01L29/72 , H01L27/12 , H01L29/161
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L21/28 , H01L29/1004 , H01L29/15 , H01L29/66287 , H01L29/66424 , H01L29/732
摘要： A semiconductor device includes a multilayer semiconductor structure comprising alternately p- (or n-) type heavily doped semiconductor layers and n- (or p-) type lightly doped semiconductor layers. Holes (or electrons) are confined within a narrow layer in a fashion like a two-dimensional gas, whereby high mobility is realized notwithstanding of high carrier concentration. Electrical conductivity of the multilayer semiconductor structure can be made higher than that of a bulk semiconductor. Very high conductivity can be realized by forming each layer in a thickness within a range of 10 .ANG. to 1000 .ANG. and preferably 50 .ANG. to 500 .ANG.. Ratio in impurity concentration of the heavily doped layer to the low doped layer is not smaller than one order of magnitude.
摘要翻译： 半导体器件包括交替的p-（或n-）型重掺杂半导体层和n-（或p-）型轻掺杂半导体层的多层半导体结构。 孔（或电子）以类似二维气体的方式被限制在窄层内，由此即使高载流子浓度也能实现高迁移率。 可以使多层半导体结构的导电性高于体半导体。 可以通过将厚度范围在10安培至1000安培范围内，优选为50安培至500安培的厚度来形成非常高的导电性。 重掺杂层的杂质浓度与低掺杂层的比例不小于一个数量级。
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公开(公告)号：US4433202A
公开(公告)日：1984-02-21
申请号：US362115
申请日：1982-03-26
申请人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
发明人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
IPC分类号： H01L31/04 , H01L31/0368 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/03682 , H01L31/03921 , Y02E10/546
摘要： A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element.The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.
摘要翻译： 一种在基板上形成的薄膜太阳能电池，其至少包括第一和第二电极，其中至少一个能够通过光，插入在所述第一和第二电极之间的硅膜，以及形成在硅膜中的至少一个结 用于在电池暴露于光时分离电子和正空穴，其中所述硅膜包括由多晶相和非晶相组成的混合相，并且包括至少约50体积％的纤维状晶粒，每个所述晶粒 具有约1μm的最大底部直径和约50nm的最小高度，并且其晶界用一价元素封端。 太阳能电池具有与单晶太阳能电池相当的高的光电转换效率，并且可以以低成本生产。
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公开(公告)号：US4796068A
公开(公告)日：1989-01-03
申请号：US40123
申请日：1987-04-20
IPC分类号： H01L29/812 , H01L21/338 , H01L29/15 , H01L29/775 , H01L29/778 , H01L29/78 , H01L29/80 , H01L29/161
CPC分类号： B82Y10/00 , H01L29/158 , H01L29/775
摘要： A semiconductor device which utilizes the fact that the effective mass of charged particles becomes exceedingly large at certain points in the direction of a periodically repeating potential by virtue of a periodic structure in which semiconductor layers are stacked in the form of a superlattice. The periodic structure enables the movement of charged particles to be one-dimensional and thus permits a great improvement in the mobility of charged particles in the channel direction. Accordingly, it is possible to realize a FET of ultrahigh mobility.
摘要翻译： 利用这样一个事实，即半导体层以超晶格形式堆叠的周期性结构，利用这样的事实，带电粒子的有效质量在周期性重复电位的方向上的某些点处变得非常大。 周期性结构使得带电粒子的运动成为一维的，从而允许带电粒子在通道方向上的迁移率大大提高。 因此，可以实现超高移动性的FET。
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9.发明授权
公开(公告)号：US4967141A
公开(公告)日：1990-10-30
申请号：US235529
申请日：1988-08-24
CPC分类号： H01F6/006 , Y10S505/725
摘要： A superconductive ring or coil is irradiated with a light ray so that its superconducting state is destroyed for a short period of time. Under the destruction of the superconducting state, removal of energy from the superconductive ring or coil or storage of energy therein is stably controlled.
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公开(公告)号：US4759030A
公开(公告)日：1988-07-19
申请号：US870948
申请日：1986-06-05
申请人： Yoshimasa Murayama , Yasutsugu Takeda , Michiharu Nakamura , Yasuhiro Shiraki , Yoshifumi Katayama , Naoki Chinone
发明人： Yoshimasa Murayama , Yasutsugu Takeda , Michiharu Nakamura , Yasuhiro Shiraki , Yoshifumi Katayama , Naoki Chinone
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/0425
摘要： A semiconductor laser having high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction and electrons and holes or excitons formed by a combination of them can be localized not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. More definitely, corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.
摘要翻译： 具有高发光效率的半导体激光器可以通过形成电位的空间波动使得电位在与电流流动方向垂直的平面内的位置不同，并且由它们的组合形成的电子和空穴或激子可以是 不仅在当前的流动方向上而且在垂直于电流流动方向的平面内。 更确定地，在半导体激光器的有源层的表面上形成具有低于100nm的平均间距的波纹或粗糙度以及有源层的平均厚度的1/10至1/2的水平差。
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