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    Cell, assembled battery, and battery-mounted device
    2.
    发明授权
    Cell, assembled battery, and battery-mounted device 有权
    电池，组装电池和电池安装装置

    公开(公告)号：US09312521B2

    公开(公告)日：2016-04-12

    申请号：US14241808

    申请日：2011-08-29

    申请人： Hiroshi Ohta

    发明人： Hiroshi Ohta

    IPC分类号： H01M2/06 ,  H01M2/30 ,  H01M2/02 ,  H01M2/22 ,  H01M2/24 ,  H01M2/26

    CPC分类号： H01M2/06 ,  H01M2/02 ,  H01M2/022 ,  H01M2/024 ,  H01M2/22 ,  H01M2/24 ,  H01M2/26 ,  H01M2/30 ,  H01M2/305

    摘要： Disclosed is a cell including: a closed-end tubular case for accommodating a power generation element; a lid for the case; a terminal electrode disposed outside of the case and used for connection with another cell; an extraction electrode passing through the lid and used to extract power of the power generation element to the outside of the case; and a stepped connection electrode disposed outside of the case, the stepped connection electrode having a first flat portion to which the terminal electrode is connected and a second flat portion which is located at a level different from the level of the first flat portion and to which the extraction electrode is connected. The first and second flat portions have regions overlapping each other as viewed in a direction orthogonal to the thickness of the first and second flat portions.

    摘要翻译： 公开了一种电池，包括：用于容纳发电元件的封闭端管状壳体; 一箱盖; 端子电极，设置在壳体的外部并用于与另一个电池连接; 通过所述盖并用于将所述发电元件的功率提取到所述壳体的外部的引出电极; 以及设置在所述壳体的外侧的阶梯状连接电极，所述阶梯状连接电极具有与所述端子电极连接的第一平坦部，以及位于与所述第一平坦部的高度不同的水平面的第二平坦部， 引出电极连接。 当与第一和第二平坦部分的厚度正交的方向观察时，第一和第二平坦部分具有彼此重叠的区域。

    Power semiconductor device
    3.
    发明授权
    Power semiconductor device 失效
    功率半导体器件

    公开(公告)号：US08716789B2

    公开(公告)日：2014-05-06

    申请号：US13610532

    申请日：2012-09-11

    申请人： Syotaro Ono ,  Masaru Izumisawa ,  Hiroshi Ohta ,  Hiroaki Yamashita

    发明人： Syotaro Ono ,  Masaru Izumisawa ,  Hiroshi Ohta ,  Hiroaki Yamashita

    IPC分类号： H01L29/66

    CPC分类号： H01L29/407 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

    摘要翻译： 根据实施例的功率半导体器件包括其中设置MOSFET元件的元件部分和设置在元件部分周围的端接部分，并且在半导体衬底中分别彼此平行地设置有柱层。 该装置包括第一沟槽和第一绝缘膜。 第一沟槽设置在从MOSFET元件的源电极露出的终端部分的半导体衬底中的柱层的端部之间。 第一绝缘膜设置在第一沟槽的侧表面和底表面上。

    Power semiconductor device
    7.
    发明授权
    Power semiconductor device 失效
    功率半导体器件

    公开(公告)号：US08487374B2

    公开(公告)日：2013-07-16

    申请号：US13234802

    申请日：2011-09-16

    申请人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Junji Suzuki ,  Hiroyuki Irifune ,  Wataru Saito ,  Syotaro Ono

    发明人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Junji Suzuki ,  Hiroyuki Irifune ,  Wataru Saito ,  Syotaro Ono

    IPC分类号： H01L29/66

    CPC分类号： H01L29/78 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/7811 ,  H01L29/7813

    摘要： In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

    摘要翻译： 通常，根据一个实施例，功率半导体器件包括在第一半导体层上的第一导电类型的第一柱状区域，第二柱状区域和外延层。 第一支柱区域由第一导电类型的多个第一支柱层和沿第一方向交替布置的第一导电类型的多个第二支柱层组成。 第二柱状区域沿着第一方向与第一柱状区域相邻，并且具有第二导电型的第三柱状层，第一导电型的第四柱状层和第二导电型的第五柱状层 沿着第一个方向。 多个第二导电类型的第二基极层分别电连接到第三柱层和第五柱层上并彼此间隔开。

    2-amino-bicyclo[3.1.0] hexane-2, 6-dicarboxylic ester derivative
    8.
    发明授权
    2-amino-bicyclo[3.1.0] hexane-2, 6-dicarboxylic ester derivative 失效
    2-氨基 - 双环[3.1.0]己烷-2,6-二羧酸酯衍生物

    公开(公告)号：US08350060B2

    公开(公告)日：2013-01-08

    申请号：US13227942

    申请日：2011-09-08

    申请人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Atsuro Nakazato

    发明人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Atsuro Nakazato

    IPC分类号： C07D307/87 ,  A61K31/34

    CPC分类号： C07C229/50 ,  C07D307/88

    摘要： A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administrationA 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.

    摘要翻译： 一种有效治疗和预防精神疾病如精神分裂症，焦虑及其相关疾病，抑郁症，双相情感障碍和癫痫的药物。 该药物拮抗II型代谢型谷氨酸受体的作用，并且在口服给药中表现出高活性。由式[I]表示的2-氨基 - 双环[3.1.0]己烷-2,6-二羧酸酯衍生物[其中R1和R2为 相同或不同，并且各自表示氢原子，C 1-10烷基等; X表示氢原子或氟原子; Y表示-OCHR 3 R 4等（其中R 3和R 4相同或不同，并且各自表示氢原子，C 1-10烷基等; n表示1或2的整数）]，其药学上可接受的盐或 水合物。

    Power semiconductor device
    9.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：US08232593B2

    公开(公告)日：2012-07-31

    申请号：US12714002

    申请日：2010-02-26

    申请人： Wataru Saito ,  Syotaro Ono ,  Hiroshi Ohta ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    发明人： Wataru Saito ,  Syotaro Ono ,  Hiroshi Ohta ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    IPC分类号： H01L29/78 ,  H01L29/06

    CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/861 ,  H01L29/8611

    摘要： A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer.

    摘要翻译： 根据本发明实施例的功率半导体器件包括第一或第二导电类型的第一半导体层，形成在第一半导体层上的第一导电类型的第二半导体层，第二导电类型的第三半导体层 选择性地形成在第二半导体层的表面上，形成在第二半导体层的表面上的第三半导体层的周边中的至少一个沟槽，至少一个沟槽的底表面的深度比底部 表面，并且比第一半导体层的顶表面浅，并且至少一个沟槽的一些或全部与第三半导体层的侧表面接触，至少一个绝缘体埋在第三半导体层 至少一个沟槽，与第一半导体层电连接的第一主电极和电连接的第二主电极 引导到第三半导体层。