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公开(公告)号：US20040092061A1
公开(公告)日：2004-05-13
申请号：US10648288
申请日：2003-08-27
IPC分类号： H01L021/00
CPC分类号： H01L27/12 , H01L27/1281 , H01L27/1285
摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.
摘要翻译： 本发明涉及一种半导体器件的制造方法，其目的在于，形成岛状图案形成的半导体区域，作为单晶体或可以看作单晶面积的区域，同时 实现了能够稳定TFT的各种特性的层叠结构，其中在玻璃基板上形成绝缘膜，并且在其上形成岛状半导体层。 通过柱面透镜的激光束被制成线性激光束并通过光学系统照射到岛状半导体层上。 岛状半导体层经受两个部件，其中一个部件是通过柱面透镜的直接激光束部件，并直接照射在岛状半导体层上，另一个部件是扩散激光束分量传输 由反射板反射的绝缘膜和基板，并再次透射基板和绝缘膜并照射到岛状半导体激光器上。
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公开(公告)号：US20040026740A1
公开(公告)日：2004-02-12
申请号：US10633754
申请日：2003-08-04
IPC分类号： H01L027/01 , H01L027/12 , H01L031/0392
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。
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公开(公告)号：US20010045558A1
公开(公告)日：2001-11-29
申请号：US09905587
申请日：2001-07-13
IPC分类号： H01L029/76 , H01L021/00
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。
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公开(公告)号：US20040203219A1
公开(公告)日：2004-10-14
申请号：US10836204
申请日：2004-05-03
IPC分类号： C30B001/00 , H01L021/20 , H01L021/36
CPC分类号： H01L21/02675 , B23K26/0608 , B23K26/067 , B23K26/0676 , H01L21/2026
摘要： For crystallizing an amorphous semiconductor film by means of irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, an effective energy intensity Io of the laser beams to be applied onto the top surface and an effective energy intensity Ionull of the laser beams to be applied onto the back surface satisfy the relationship of 0
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公开(公告)号：US20040140470A1
公开(公告)日：2004-07-22
申请号：US10625904
申请日：2003-07-24
发明人： Ritsuko Kawasaki , Kenji Kasahara , Hisashi Ohtani
IPC分类号： H01L029/04 , H01L021/00
CPC分类号： H01L29/78603 , H01L27/1255 , H01L27/1277 , H01L27/1281
摘要： A crystalline semiconductor film in which the position and size of a crystal grain is controlled is fabricated, and the crystalline semiconductor film is used for a channel formation region of a TFT, so that a high performance TFT is realized. An island-like semiconductor layer is made to have a temperature distribution, and a region where temperature change is gentle is provided to control the nucleus generation speed and nucleus generation density, so that the crystal grain is enlarged. In a region where an island-like semiconductor layer 1003 overlaps with a base film 1002, a thick portion is formed in the base film 1002. The volume of this portion increases and heat capacity becomes large, so that a cycle of temperature change by irradiation of a pulse laser beam to the island-like semiconductor layer becomes gentle (as compared with other thin portion). Like this, a laser beam is irradiated from the front side and reverse side of the substrate to directly heat the semiconductor layer, and heat conduction from the semiconductor layer to the side of the substrate and heat conduction of the semiconductor layer in the horizontal direction to the substrate are used, so that the increase in the size of the crystal grain is realized.
摘要翻译： 制造其中晶体的位置和尺寸被控制的结晶半导体膜，并且晶体半导体膜用于TFT的沟道形成区域，从而实现高性能TFT。 使岛状半导体层具有温度分布，并且设置温度变化缓慢的区域以控制核产生速度和核产生密度，使得晶粒增大。 在岛状半导体层1003与基膜1002重叠的区域中，在基膜1002中形成厚部。该部分的体积增加，热容变大，使得通过照射的温度变化的周期 脉冲激光束到岛状半导体层变得平缓（与其他薄部分相比）。 像这样，从基板的正面侧和反面侧照射激光束，直接加热半导体层，从半导体层向基板侧的热传导，将半导体层沿水平方向的热传导到 使用基板，从而实现晶粒尺寸的增加。
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6.发明申请公开(公告)号：US20040224449A1
公开(公告)日：2004-11-11
申请号：US10871380
申请日：2004-06-21
IPC分类号： H01L021/00 , H01L021/84 , H01L021/20
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
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7.发明申请公开(公告)号：US20030203656A1
公开(公告)日：2003-10-30
申请号：US10406295
申请日：2003-04-04
IPC分类号： H01L021/26 , H01L021/42
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78633 , H01L29/78675
摘要： A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0
摘要翻译： 提供了用于获得具有大晶粒尺寸的晶体半导体膜的激光退火方法。 当通过激光照射使非晶半导体膜结晶时，激光照射到非晶半导体膜的顶表面和底表面。 此外，对于照射到顶部的激光的有效能量强度之间的比（I0 / I0'），实现0 <（I0'/ I0）<1，OR1 <（I0'/ I0）的关系 表面（I0）和当照射到底面（I0'）时激光的有效能量强度。
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公开(公告)号：US20020167007A1
公开(公告)日：2002-11-14
申请号：US10093313
申请日：2002-03-07
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L031/036 , H01L023/58
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.
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公开(公告)号：US20020149057A1
公开(公告)日：2002-10-17
申请号：US10166151
申请日：2002-06-10
IPC分类号： H01L027/01
CPC分类号： H01L27/1218 , G02F1/133345 , G02F2001/133337 , H01L27/1214 , H01L27/1277 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78624 , H01L29/78627
摘要： In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities from the glass substrate. In a semiconductor device comprising a blocking film provided in contact with a glass substrate and TFTs provided on the blocking film, the blocking film is characterized by being made of a tantalum oxide film.
摘要翻译： 在采用玻璃基板的半导体装置中，本发明的目的是提供一种具有大屏幕的低成本的高性能半导体器件，从而防止半导体器件被来自玻璃基板的杂质污染。 在包括与玻璃基板接触的阻挡膜和设置在阻挡膜上的TFT的半导体器件中，阻挡膜的特征在于由氧化钽膜制成。
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公开(公告)号：US20040248387A1
公开(公告)日：2004-12-09
申请号：US10653883
申请日：2003-09-04
发明人： Ritsuko Kawasaki , Kenji Kasahara , Hisashi Ohtani
IPC分类号： H01L021/00 , C30B001/00 , H01L021/20 , H01L021/84 , H01L021/36
CPC分类号： H01L29/78645 , G02F1/13454 , H01L27/12 , H01L27/1281 , H01L29/4908 , H01L29/66757 , H01L29/78624 , H01L29/78648 , H01L29/78675
摘要： To provide a TFT that can operate at a high speed by forming a crystalline semiconductor film while controlling the position and the size of a crystal grain in the film to use the crystalline semiconductor film for a channel forming region of the TFT. Instead of a metal or a highly heat conductive insulating film, only a conventional insulating film is used as a base film to introduce a temperature gradient. A level difference of the base insulating film is provided in a desired location to generate the temperature distribution in the semiconductor film in accordance with the arrangement of the level difference. The starting point and the direction of lateral growth are controlled utilizing the temperature distribution.
摘要翻译： 为了提供可以通过在控制晶片的晶粒的位置和尺寸的同时，通过形成晶体半导体膜来高速操作的TFT，以使用用于TFT的沟道形成区域的晶体半导体膜。 代替金属或高导热绝缘膜，仅使用传统的绝缘膜作为基膜来引入温度梯度。 基底绝缘膜的电平差设置在所需位置，以根据电平差的布置在半导体膜中产生温度分布。 利用温度分布来控制侧向生长的起点和方向。
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