公开(公告)号：US5073180A

公开(公告)日：1991-12-17

申请号：US672517

申请日：1991-03-20

申请人： Shaji Farooq ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Nancy C. Stoffel ,  Rao V. Vallabhaneni

发明人： Shaji Farooq ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Nancy C. Stoffel ,  Rao V. Vallabhaneni

IPC分类号： C03B32/02 ,  C03C3/064 ,  C03C10/00 ,  C03C17/10 ,  C04B35/622 ,  C04B35/64 ,  H05K1/03 ,  H05K1/09 ,  H05K3/46

CPC分类号： H05K3/4629 ,  H05K3/4611 ,  H05K1/0306 ,  H05K1/092 ,  Y10T29/49126 ,  Y10T29/49163

摘要： A method for forming a co-fired glass ceramic structure including the steps of:forming at least one green sheet of a first crystallizable glass in a thermally decomposable binder;metallizing the green sheet with a pattern of conductive paste including conductive metal, a second crystallizable glass and a thermally decomposable binder, the pattern including at least one via;firing the green sheet according to the following firing cycle steps:a. preheating the green sheet to a first temperature in a furnace with a neutral or reducing ambient so as to effect pyrolysis of the thermally decomposable binders, wherein the first temperature is insufficient to coalesce the first crystallizable glass or the conductive paste;b. introducing a steam ambient into the furnace and then heating the green sheet in the furnace at the first temperature to burn off the pyrolyzed binders;c. replacing the steam ambient with a neutral or reducing ambient and raising the temperature to a second temperature to effect densification and crystallization of the first and second glasses;d. maintaining the second temperature for a predetermined time to effect sealing of the at least one via wherein for a first portion of the predetermined time, the ambient in said furnace is a neutral or reducing ambient and for a second portion of the predetermined time, the neutral or reducing ambient is replaced with a steam ambient; ande. cooling the structure.

公开(公告)号：US06376054B1

公开(公告)日：2002-04-23

申请号：US09249985

申请日：1999-02-10

申请人： Scott I. Langenthal ,  Thomas E. Lombardi ,  Richard Francis Indyk ,  John Ulrich Knickerbocker ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Rao V. Vallabhaneni ,  Donald Rene Wall

发明人： Scott I. Langenthal ,  Thomas E. Lombardi ,  Richard Francis Indyk ,  John Ulrich Knickerbocker ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Rao V. Vallabhaneni ,  Donald Rene Wall

IPC分类号： B32B300

CPC分类号： G01R1/0466 ,  G01R1/0408 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A cost-effective surface metallization structure of a TCA carrier is produced by using a high-grit conducting paste to fill TSM vias in the TSM of the TCA carrier. This concept can be applied to alumina substrates with refractory metal conductors or to LCGC substrates with more noble metal conductors.

摘要翻译： 通过使用高粒度导电膏来填充TCA载体的TSM中的TSM通孔，制造了TCA载体的经济有效的表面金属化结构。 该概念可以应用于具有难熔金属导体的氧化铝衬底或具有更贵贵金属导体的LCGC衬底。

公开(公告)号：US6096565A

公开(公告)日：2000-08-01

申请号：US265438

申请日：1999-03-09

申请人： David B. Goland ,  Richard A. Shelleman ,  Subhash L. Shinde ,  Lisa M. Studzinski ,  Rao V. Vallabhaneni

发明人： David B. Goland ,  Richard A. Shelleman ,  Subhash L. Shinde ,  Lisa M. Studzinski ,  Rao V. Vallabhaneni

IPC分类号： H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L21/00

CPC分类号： H01L21/4857 ,  H01L23/49888 ,  H01L23/5383 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S428/93

摘要： A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably yttrium-barium-copper-oxide and is encased within a noble metal such as silver or gold when forming the surface circuitry or filling of the vias. The noble metal layers preferably have through-openings to enable direct connection of circuitry to the encased superconductor layer. A method is also provided for fabricating such multilayer ceramic substrate electronic components.

摘要翻译： 提供具有高温超导体材料电路的多层陶瓷基板电子部件。 高温超导体材料优选为钇钡钡氧化物，并且当形成表面电路或填充通孔时被包裹在贵金属如银或金中。 贵金属层优选具有通孔以使得电路能够直接连接到被封装的超导体层。 还提供了一种用于制造这种多层陶瓷衬底电子部件的方法。

公开(公告)号：US06002951A

公开(公告)日：1999-12-14

申请号：US968191

申请日：1997-11-12

申请人： David B. Goland ,  Richard A. Shelleman ,  Subhash L. Shinde ,  Lisa M. Studzinski ,  Rao V. Vallabhaneni

发明人： David B. Goland ,  Richard A. Shelleman ,  Subhash L. Shinde ,  Lisa M. Studzinski ,  Rao V. Vallabhaneni

IPC分类号： H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L39/00

CPC分类号： H01L21/4857 ,  H01L23/49888 ,  H01L23/5383 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S428/93

摘要： A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably yttrium-barium-copper-oxide and is encased within a noble metal such as silver or gold when forming the surface circuitry or filling of the vias. The noble metal layers preferably have through-openings to enable direct connection of circuitry to the encased superconductor layer. A method is also provided for fabricating such multilayer ceramic substrate electronic components.

摘要翻译： 提供具有高温超导体材料电路的多层陶瓷基板电子部件。 高温超导体材料优选为钇钡钡氧化物，并且当形成表面电路或填充通孔时被包裹在贵金属如银或金中。 贵金属层优选具有通孔以使得电路能够直接连接到被封装的超导体层。 还提供了一种用于制造这种多层陶瓷衬底电子部件的方法。

公开(公告)号：US07645423B2

公开(公告)日：2010-01-12

申请号：US10711071

申请日：2004-08-20

申请人： Govindarajan Natarajan ,  David H. Gabriels ,  Mark W. Kapfhammer ,  Richard A. Shelleman ,  Kurt A. Smith

发明人： Govindarajan Natarajan ,  David H. Gabriels ,  Mark W. Kapfhammer ,  Richard A. Shelleman ,  Kurt A. Smith

IPC分类号： B01L3/00

CPC分类号： B01L3/5085 ,  B01L3/50255 ,  B01L3/5027 ,  B01L2300/0654 ,  B01L2300/0663 ,  B01L2300/0829 ,  B01L2300/12 ,  B01L2300/1827 ,  G01N21/03 ,  G01N2021/0346

摘要： A method of making and the resultant micro well plate that includes a plurality of greensheets, either laminated or sintered together, whereby these greensheets have a plurality of vertical micro well reaction chamber openings therein, and optionally a plurality horizontal channels connecting selected well reaction chamber openings. The vertical micro well reaction chambers have at, at least one end thereof a plurality of optical micro plugs which are aligned to the vertical micro well reaction chamber openings. The plurality of optical micro plugs allow for the micro well plate to be integrated with macro analytical instrumentation for the analysis, examination, and/or testing of chemicals, reagents or samples provided within the vertical micro well reaction chamber openings.

摘要翻译： 一种制造方法和所得到的微孔板，其包括多个层压体或烧结在一起的刮板，由此这些刮板在其中具有多个垂直微孔反应室开口，并且可选地，多个水平通道连接选定的井反应室开口 。 垂直微孔反应室的至少一端具有与垂直微孔反应室开口对准的多个光学微型插头。 多个光学微插头允许微孔板与宏观分析仪器集成，用于分析，检查和/或测试在垂直微孔反应室开口内提供的化学品，试剂或样品。

公开(公告)号：US5888446A

公开(公告)日：1999-03-30

申请号：US7625

申请日：1998-01-15

申请人： Jon A. Casey ,  Jonathan H. Harris ,  Lester Wynn Herron ,  Irvin Huseby ,  Richard A. Shelleman ,  Subhash L. Shinde ,  Robert A. Youngman

发明人： Jon A. Casey ,  Jonathan H. Harris ,  Lester Wynn Herron ,  Irvin Huseby ,  Richard A. Shelleman ,  Subhash L. Shinde ,  Robert A. Youngman

IPC分类号： C04B35/581 ,  C04B35/638 ,  C04B35/64

CPC分类号： C04B35/638 ,  C04B35/581

摘要： Disclosed is a method of forming an aluminum nitride article. The method includes the steps of adding platinum to a composition including a binder, aluminum nitride particles and a sintering aid; forming the composition into an article; placing the article in a substantially non-carbonaceous container; and sintering the article in a reducing atmosphere to cause removal of the binder and densification of the aluminum nitride article, wherein the platinum catalyzes the removal of the binder.

摘要翻译： 公开了一种形成氮化铝制品的方法。 该方法包括将铂添加到包含粘合剂，氮化铝颗粒和烧结助剂的组合物中的步骤; 将组合物形成制品; 将物品放置在基本上非碳质的容器中; 并且在还原气氛中烧结该制品以使得粘结剂的去除和氮化铝制品的致密化，其中铂催化除去粘合剂。

公开(公告)号：US06835260B2

公开(公告)日：2004-12-28

申请号：US10265516

申请日：2002-10-04

申请人： Benjamin V. Fasano ,  David H. Gabriels ,  Richard F. Indyk ,  Glenn A. Pomerantz ,  Richard A. Shelleman

发明人： Benjamin V. Fasano ,  David H. Gabriels ,  Richard F. Indyk ,  Glenn A. Pomerantz ,  Richard A. Shelleman

IPC分类号： B32B3118

CPC分类号： B32B18/00 ,  B32B38/0004 ,  B32B2310/0843 ,  C04B2237/32 ,  C04B2237/341 ,  C04B2237/52 ,  C04B2237/56 ,  C04B2237/561 ,  C04B2237/562 ,  C04B2237/62 ,  C04B2237/68 ,  C04B2237/702 ,  H01L21/4807 ,  H01L21/481 ,  H05K1/0306 ,  H05K3/4611 ,  H05K3/4629 ,  H05K3/4697 ,  H05K2203/063 ,  H05K2203/308 ,  Y10T156/1082

摘要： Methods to create raised pedestal parts in ceramic substrates sintered under a load. The invention uses a patterned, buried, non-sintering layer that provides the needed transfer of load during the sintering process to the raised or pedestal portion of the substrate while maintaining dimensional control of the metallized features on the surface of the pedestal base. The methods involve cutting channels in the ceramic substrate corresponding in position to the perimeter of the opening in the patterned non-sintering contact sheet. The channels may be cut either before or after the sintering of the ceramic substrates.

公开(公告)号：US08268716B2

公开(公告)日：2012-09-18

申请号：US12894231

申请日：2010-09-30

申请人： Charles L. Arvin ,  Valerie Oberson ,  Srinivasa N. Reddy ,  Krystyna W. Semkow ,  Richard A. Shelleman ,  Kamalesh K. Srivistava

发明人： Charles L. Arvin ,  Valerie Oberson ,  Srinivasa N. Reddy ,  Krystyna W. Semkow ,  Richard A. Shelleman ,  Kamalesh K. Srivistava

IPC分类号： H01L21/44

CPC分类号： H01L24/16 ,  H01L23/15 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/13166 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81444 ,  H01L2224/81815 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of coupling an integrated circuit to a substrate includes providing the substrate, forming a contact pad in the substrate, contacting the contact pad with a solder ball, and repeatedly exposing the solder ball to a thermal process to cause intermetallics based on a metal in the contact pad to be formed in the thermal ball.

摘要翻译： 将集成电路耦合到衬底的方法包括提供衬底，在衬底中形成接触焊盘，使接触焊盘与焊球接触，并且将焊球重复地暴露于热处理以引起基于金属的金属间化合物 接触垫将形成在热球中。

公开(公告)号：US20120083113A1

公开(公告)日：2012-04-05

申请号：US12894231

申请日：2010-09-30

申请人： Charles L. Arvin ,  Valerie Oberson ,  Srinivasa N. Reddy ,  Krystyna W. Semkow ,  Richard A. Shelleman ,  Kamalesh K. Srivastava

发明人： Charles L. Arvin ,  Valerie Oberson ,  Srinivasa N. Reddy ,  Krystyna W. Semkow ,  Richard A. Shelleman ,  Kamalesh K. Srivastava

IPC分类号： H01L21/768

CPC分类号： H01L24/16 ,  H01L23/15 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/13166 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81444 ,  H01L2224/81815 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of coupling an integrated circuit to a substrate includes providing the substrate, forming a contact pad in the substrate, contacting the contact pad with a solder ball, and repeatedly exposing the solder ball to a thermal process to cause intermetallics based on a metal in the contact pad to be formed in the thermal ball.

摘要翻译： 将集成电路耦合到衬底的方法包括提供衬底，在衬底中形成接触焊盘，使接触焊盘与焊球接触，并且将焊球重复地暴露于热处理以引起基于金属的金属间化合物 接触垫将形成在热球中。