公开(公告)号：US07394073B2

公开(公告)日：2008-07-01

申请号：US11336466

申请日：2006-01-20

申请人： James J. Cummings ,  Joseph Olson ,  Arthur H. Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul J. Murphy ,  Mark Donahue

发明人： James J. Cummings ,  Joseph Olson ,  Arthur H. Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul J. Murphy ,  Mark Donahue

IPC分类号： G01K1/08

CPC分类号： H01J37/244 ,  G01B15/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/31701 ,  H01J2237/31703

摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.

摘要翻译： 用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分 离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。 传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。 感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

公开(公告)号：US20060289798A1

公开(公告)日：2006-12-28

申请号：US11336466

申请日：2006-01-20

申请人： James Cummings ,  Joseph Olson ,  Arthur Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy ,  Mark Donahue

发明人： James Cummings ,  Joseph Olson ,  Arthur Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy ,  Mark Donahue

IPC分类号： H01J37/08

CPC分类号： H01J37/244 ,  G01B15/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/31701 ,  H01J2237/31703

摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.

摘要翻译： 用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分 离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。 传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。 感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

公开(公告)号：US20060219936A1

公开(公告)日：2006-10-05

申请号：US11099119

申请日：2005-04-05

申请人： Joseph Olson ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy

发明人： Joseph Olson ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy

IPC分类号： G01K1/08 ,  H01J3/14

CPC分类号： H01J37/244 ,  G01B15/00 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31701

摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.

摘要翻译： 用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记拦截至少一部分 离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并产生具有代表第一特征的第一信号分量和表示第二特征的第二信号分量的传感器信号。 标志的第一和第二信号分量和对应的位置代表垂直于平移路径的方向上离子束的角度。 感测装置可以是束电流传感器的二维阵列。 该系统可以提供水平和垂直波束角度的测量，同时仅在一个方向上翻译标志。

公开(公告)号：US20060076510A1

公开(公告)日：2006-04-13

申请号：US10960904

申请日：2004-10-07

申请人： Shengwu Chang ,  Antonella Cucchetti ,  Joseph Dzengeleski ,  Gregory Gibilaro ,  Rosario Mollica ,  Gregg Norris ,  Joseph Olson ,  Marie Welsch

发明人： Shengwu Chang ,  Antonella Cucchetti ,  Joseph Dzengeleski ,  Gregory Gibilaro ,  Rosario Mollica ,  Gregg Norris ,  Joseph Olson ,  Marie Welsch

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30461 ,  H01J2237/31703

摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

摘要翻译： 公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。 此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能 横跨许多设置。

公开(公告)号：US07547460B2

公开(公告)日：2009-06-16

申请号：US09950939

申请日：2001-09-12

申请人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

发明人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

IPC分类号： C23C14/54 ,  C23C14/48

CPC分类号： H01J37/3171 ,  H01J37/1474 ,  H01J2237/3045

摘要： Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.

摘要翻译： 提供了用于控制离子注入系统中的剂量均匀性的方法和装置。 根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。 存储的扫描波形在第二次注入过程中被调用并使用。 根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。 根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。 该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用 在第二次植入过程中调用扫描波形。

公开(公告)号：US20050178981A1

公开(公告)日：2005-08-18

申请号：US11056445

申请日：2005-02-11

申请人： Anthony Renau ,  Joseph Olson ,  Eric Hermanson ,  Gordon Angel

发明人： Anthony Renau ,  Joseph Olson ,  Eric Hermanson ,  Gordon Angel

IPC分类号： G21K5/10 ,  H01J37/08 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/24405 ,  H01J2237/304

摘要： An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization

摘要翻译： 公开了一种离子束中性检测器系统，包括检测器系统的离子注入机系统和检测离子束中性物质的方法，其确保离子注入满足污染要求。 检测器包括一个位于离子注入机系统中的能量污染监测器。 本发明的方法包括使用离子束植入工件，并且周期性地检测离子束中的离子束中性粒子，使得可以对离子注入机系统进行调整以进行优化

公开(公告)号：US20070235663A1

公开(公告)日：2007-10-11

申请号：US11394824

申请日：2006-03-31

申请人： Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

发明人： Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

IPC分类号： G21G5/00

CPC分类号： H01J37/16 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/038

摘要： An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.

摘要翻译： 离子注入系统包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘体系统。 绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。 还提供了一种用于对离子注入系统的气体箱进行电绝缘的气体箱绝缘体系统。

公开(公告)号：US20060192134A1

公开(公告)日：2006-08-31

申请号：US11093930

申请日：2005-03-30

申请人： Anthony Renau ,  Eric Hermanson ,  Joseph Olson ,  Gordon Angel

发明人： Anthony Renau ,  Eric Hermanson ,  Joseph Olson ,  Gordon Angel

IPC分类号： G01K1/08

CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/24405 ,  H01J2237/31703 ,  H01J2237/31705

摘要： The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

摘要翻译： 本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。 本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。 本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极， 正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

公开(公告)号：US20060240651A1

公开(公告)日：2006-10-26

申请号：US11114593

申请日：2005-04-26

申请人： Anthony Renau ,  Dennis Rodier ,  Joseph Olson ,  Bret Adams

发明人： Anthony Renau ,  Dennis Rodier ,  Joseph Olson ,  Bret Adams

IPC分类号： H01L21/425

CPC分类号： H01L22/20

摘要： A method for processing a substrate, such as a semiconductor wafer, includes performing a measurement to determine a substrate parameter distribution to be compensated, determining an adjusted implant parameter distribution to compensate for the substrate parameter distribution, and implanting the substrate in accordance with the adjusted implant parameter distribution. The substrate parameter distribution to be compensated may result from another process step and may be uniform or non-uniform. In another embodiment, an implant parameter may be varied as a function of implant position on the substrate to achieve different substrate parameter values in different areas of the substrate.

摘要翻译： 用于处理诸如半导体晶片的衬底的方法包括执行测量以确定要补偿的衬底参数分布，确定调整的植入参数分布以补偿衬底参数分布，以及根据所调整的衬底参数分布来植入衬底 植入参数分布。 要补偿的衬底参数分布可以由另一个工艺步骤产生，并且可以是均匀的或不均匀的。 在另一个实施例中，植入参数可以作为衬底上的植入位置的函数而变化，以在衬底的不同区域中实现不同的衬底参数值。

公开(公告)号：US20060169915A1

公开(公告)日：2006-08-03

申请号：US11269033

申请日：2005-11-08

申请人： Joseph Olson ,  Anthony Renau ,  Donna Smatlak ,  Kurt Deckerlucke ,  Paul Murphy ,  Alexander Perel ,  Russell Low ,  Peter Kurunczi

发明人： Joseph Olson ,  Anthony Renau ,  Donna Smatlak ,  Kurt Deckerlucke ,  Paul Murphy ,  Alexander Perel ,  Russell Low ,  Peter Kurunczi

IPC分类号： H01L21/336 ,  H01J27/00

CPC分类号： H01J37/08 ,  H01J27/08 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/0825 ,  H01J2237/0827 ,  H01J2237/31701

摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

摘要翻译： 提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。 在一些实施例中，第一和第二电子源位于电弧室的相对端。 第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。 在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。 在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。