公开(公告)号：US20110168205A1

公开(公告)日：2011-07-14

申请号：US12985652

申请日：2011-01-06

申请人： Shigeru TAHARA ,  Fumiko YAMASHITA ,  Eiichi NISHIMURA ,  Tokuhisa OHIWA ,  Takaya MATSUSHITA ,  Hiroshi TOMITA

发明人： Shigeru TAHARA ,  Fumiko YAMASHITA ,  Eiichi NISHIMURA ,  Tokuhisa OHIWA ,  Takaya MATSUSHITA ,  Hiroshi TOMITA

IPC分类号： B08B7/00 ,  C23F1/08

CPC分类号： H01L21/67028 ,  H01L21/02057

摘要： A substrate cleaning method performing cleaning of a surface of a substrate after a pattern on the substrate is formed by plasma etching, includes: a by-product removal process removing a by-product by exposing the substrate to an HF gas atmosphere; and a residual fluorine removal process removing fluorine remaining on the substrate by turning cleaning gas containing hydrogen gas and chemical compound gas containing carbon and hydrogen as constituent elements into plasma to act on the substrate.

摘要翻译： 通过等离子体蚀刻形成在基板上的图案之后进行基板表面的清洗的基板清洗方法，包括：通过将基板暴露于HF气体气氛中来除去副产物的副产物去除处理; 以及通过将含有氢气的含氢气和含有碳和氢的化合物气体作为构成元素的清洗气体转移到等离子体中，从而除去残留在基板上的氟的残留除氟过程。

公开(公告)号：US20110174337A1

公开(公告)日：2011-07-21

申请号：US13010203

申请日：2011-01-20

申请人： Eiichi NISHIMURA ,  Shigeru Tahara ,  Fumiko Yamashita

发明人： Eiichi NISHIMURA ,  Shigeru Tahara ,  Fumiko Yamashita

IPC分类号： B08B7/00

CPC分类号： H01L21/02057

摘要： A method for recovering a shape of patterns, formed etching on a silicon substrate by etching, by removing foreign substances grown between the patterns is provided. The method includes heating the silicon substrate accommodated in a chamber to a temperature of about 160° C. or higher.

摘要翻译： 提供了一种用于恢复图案形状的方法，通过蚀刻在硅衬底上形成的蚀刻，通过去除在图案之间生长的异物。 该方法包括将容纳在室中的硅衬底加热至约160℃或更高的温度。

公开(公告)号：US20120244718A1

公开(公告)日：2012-09-27

申请号：US13428212

申请日：2012-03-23

申请人： Eiichi NISHIMURA ,  Masato KUSHIBIKI ,  Fumiko YAMASHITA

发明人： Eiichi NISHIMURA ,  Masato KUSHIBIKI ,  Fumiko YAMASHITA

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/3065

摘要： Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C4F6 gas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.

摘要翻译： 公开了一种当在氧化物膜上形成高纵横比孔或沟槽时能够防止蚀刻速率劣化的衬底处理方法。 当通过使用具有开口的硅制成的硬掩模层蚀刻在晶片上形成的氧化膜，在氧化物膜上形成高纵横比的孔或沟槽时，使用从 处理含有C4F6气体和甲烷气体的气体。 随后，通过蚀刻生成并沉积在氧化膜的孔的内表面上的反应产物用从含有氧气的处理气体产生的等离子体等离子化，并且依次重复蚀刻和灰化过程。

公开(公告)号：US20090008034A1

公开(公告)日：2009-01-08

申请号：US12165871

申请日：2008-07-01

申请人： Shigeru TAHARA ,  Eiichi NISHIMURA ,  Kumiko YAMAZAKI

发明人： Shigeru TAHARA ,  Eiichi NISHIMURA ,  Kumiko YAMAZAKI

IPC分类号： H01L21/306

CPC分类号： H01J37/32633 ,  H01J37/321 ,  H01J37/32357

摘要： A plasma generation chamber and a processing chamber are isolated from each other by a barrier wall member disposed between them. The barrier wall member includes two plate members and stacked one on top of the other over a gap, a plurality of through holes and, via which hydrogen radicals are allowed to pass, are respectively formed at the plate member and the plate member. The through holes at one plate member are formed with an offset relative to the through holes formed at the other plate member and the plate members are both constituted of an insulating material that does not transmit ultraviolet light.

摘要翻译： 等离子体产生室和处理室通过设置在它们之间的阻挡壁构件相互隔离。 阻挡壁构件包括两个板构件，并且在间隙上彼此堆叠，在板构件和板构件上分别形成有多个通孔和通过氢自由基的通孔。 一个板构件的通孔相对于形成在另一个板构件上的通孔形成偏移，并且板构件均由不透射紫外线的绝缘材料构成。

公开(公告)号：US20120190207A1

公开(公告)日：2012-07-26

申请号：US13357095

申请日：2012-01-24

申请人： Eiichi NISHIMURA ,  Shigeru TAHARA

发明人： Eiichi NISHIMURA ,  Shigeru TAHARA

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01J37/3211 ,  H01J37/32422 ,  H01L21/3065

摘要： A plasma processing apparatus performs plasma process by using a hydrogen radical generated by plasma-exciting a process gas containing hydrogen on a substrate to be processed. A high-frequency antenna includes an antenna device that is configured to resonate at a half-wavelength of high-frequency power applied from the high-frequency power source by opening two ends of the antenna device and grounding a center point of the antenna device. A barrier wall member for separating a plasma generating chamber and a plasma processing chamber includes a plurality of plate-shaped members having a plurality of openings through which the hydrogen radical passes, formed of an insulating material through which UV light does not pass, and overlapping each other at a predetermined interval, wherein the openings of one plate-shaped member are provided not to overlap the openings of another plate-shaped member.

摘要翻译： 等离子体处理装置通过使用通过在待处理的基板上等离子体激发含有氢的处理气体而产生的氢自由基来进行等离子体处理。 高频天线包括天线装置，其被配置为通过打开天线装置的两端并将天线装置的中心点接地而在从高频电源施加的高频功率的半波长处谐振。 用于分离等离子体发生室和等离子体处理室的阻挡壁构件包括多个板状构件，其具有多个开口，氢自由基穿过该开口，由绝缘材料形成，UV光不通过该绝缘材料，并且重叠 彼此以预定的间隔彼此相对，其中一个板状构件的开口设置成不与另一个板状构件的开口重叠。

公开(公告)号：US20120190206A1

公开(公告)日：2012-07-26

申请号：US13438247

申请日：2012-04-03

申请人： Koichi YATSUDA ,  Eiichi NISHIMURA

发明人： Koichi YATSUDA ,  Eiichi NISHIMURA

IPC分类号： H01L21/302

CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/11521

摘要： A semiconductor device manufacturing method includes forming a first organic film pattern on a to-be-etched layer on a substrate, forming a silicon oxide film coating the first organic film pattern-etching the silicon oxide film to form a first mask pattern to cause the width of the line part of the first organic film pattern to have a fixed proportion with respect forming a second organic film pattern coating the silicon oxide film, forming a second mask pattern including the silicon oxide film on a side face part in an area coated by the second organic film pattern, and forming, in an area other than the area coated by the second organic film pattern, a third mask pattern in which an even number of the silicon oxide films are arranged.

摘要翻译： 半导体器件制造方法包括在基板上的被蚀刻层上形成第一有机膜图案，形成涂覆第一有机膜图案的氧化硅膜，蚀刻氧化硅膜以形成第一掩模图案， 第一有机膜图案的线部分的宽度具有固定比例，以形成涂覆氧化硅膜的第二有机膜图案，在涂覆有氧化硅膜的区域中的侧面部分上形成包括氧化硅膜的第二掩模图案 第二有机膜图案，并且在除了由第二有机膜图案涂覆的区域以外的区域中形成其中布置有偶数个氧化硅膜的第三掩模图案。

公开(公告)号：US20080141509A1

公开(公告)日：2008-06-19

申请号：US11950832

申请日：2007-12-05

申请人： Eiichi NISHIMURA

发明人： Eiichi NISHIMURA

IPC分类号： H01L21/67 ,  G06F17/50

CPC分类号： H01L21/67051 ,  H01L21/0209 ,  H01L21/67069 ,  H01L21/6831

摘要： A substrate processing system that can reliably prevent a rear surface of a substrate from getting scratched without bringing about a decrease in the throughput. A printing module connected to a loader module prints a protective film on the rear surface of the substrate before the substrate is subjected to plasma etching processing. A cleaning module connected to the loader module removes the protective film from the rear surface of the substrate after the substrate has been subjected to the plasma etching processing.

摘要翻译： 可以可靠地防止基板的后表面划伤而不会导致生产量降低的基板处理系统。 连接到装载机模块的打印模块在基板进行等离子体蚀刻处理之前，在基板的后表面上印刷保护膜。 连接到加载器模块的清洁模块在基板经受等离子体蚀刻处理之后，从基板的后表面去除保护膜。

公开(公告)号：US20100144155A1

公开(公告)日：2010-06-10

申请号：US12407854

申请日：2009-03-20

申请人： Koichi YATSUDA ,  Eiichi NISHIMURA

发明人： Koichi YATSUDA ,  Eiichi NISHIMURA

IPC分类号： H01L21/308

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  Y10S438/948 ,  Y10S438/975

摘要： The method of manufacturing a semiconductor device comprising: forming a first hard mask layer and a second hard mask layer on the layer to be etched (S11); a first groove-forming mask pattern forming process for forming a groove-forming mask pattern which has a first pitch, is formed of the second hard mask layer, and is used as an etching mask when forming groove patterns(S12-S14); and a first concave portion-forming mask pattern forming process for etching the first hard mask layer using the second resist pattern as an etching mask, wherein the second resist pattern is formed of the second resist layer having an opening portion that has a fourth pitch and the first organic layer having an opening portion that is connected to an opening portion of the second resist layer and has a smaller size than the opening portion of the second resist layer (S15-S18).

摘要翻译： 制造半导体器件的方法包括：在被蚀刻层上形成第一硬掩模层和第二硬掩模层（S11）; 用于形成具有第一间距的沟槽形成掩模图案的第一凹槽形成掩模图案形成工艺由第二硬掩模层形成，并且在形成凹槽图案时用作蚀刻掩模（S12-S14）。 以及使用第二抗蚀剂图案作为蚀刻掩模来蚀刻第一硬掩模层的第一凹部形成掩模图案形成工艺，其中第二抗蚀剂图案由具有第四间距的开口部分的第二抗蚀剂层形成，以及 所述第一有机层具有与所述第二抗蚀剂层的开口部连接并且具有比所述第二抗蚀剂层的开口部小的尺寸的开口部（S15-S18）。

公开(公告)号：US20100018332A1

公开(公告)日：2010-01-28

申请号：US12506440

申请日：2009-07-21

申请人： Tsuyoshi MORIYA ,  Eiichi NISHIMURA

发明人： Tsuyoshi MORIYA ,  Eiichi NISHIMURA

IPC分类号： G01N33/00 ,  G01M19/00

CPC分类号： G01M99/002 ,  H01L22/12 ,  H01L22/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A foreign matter detecting method of detecting foreign matter attached to a peripheral edge of a substrate, which makes it possible to accurately detect foreign matter attached to the peripheral edge of the substrate even if the foreign matter is of a minute size below the detection limit of an existing measuring instrument, and which is highly versatile and suitable for mass production of substrates. The substrate is cooled to condense moisture around the foreign matter attached to the peripheral edge of the substrate, and then the condensed moisture is iced to grow an ice crystal. Then, the foreign matter attached to the peripheral edge of the substrate, which is emphasized by the ice crystal, is detected.

摘要翻译： 检测附着于基板的周缘的异物的异物检测方法，即使异物的检测极限低于检测限的微小尺寸，也能够准确地检测附着在基板的周缘的异物 现有的测量仪器，并且是高度通用性的并且适合于大量生产基板。 将基板冷却以冷凝附着在基板的周边边缘的异物，然后冷凝的水分被冰化以生长冰晶。 然后，检测附着在基板的周缘的异物，其被冰晶强调。

公开(公告)号：US20090275201A1

公开(公告)日：2009-11-05

申请号：US12501775

申请日：2009-07-13

申请人： Eiichi NISHIMURA

发明人： Eiichi NISHIMURA

IPC分类号： H01L21/465

CPC分类号： H01L21/6831 ,  H01J37/32743 ,  H01L21/67069 ,  H01L21/67207

摘要： A substrate processing method implemented in a substrate processing system that includes an etching apparatus that carries out plasma etching processing on a substrate and a vacuum-type substrate transferring apparatus to which the etching apparatus is connected is provided. A first step includes forming a protective film on a rear surface of the substrate before the plasma etching processing is carried out. The protective film prevents the rear surface of the substrate from being scratched by an electrostatic chuck that electrostatically attracts the substrate during the plasma etching processing. A second step includes electrostatically attracting the substrate to the electrostatic chuck such that the electrostatic chuck directly contacts the rear surface of the substrate and of carrying out the plasma etching processing on the substrate. A third step includes removing the protective film from the rear surface of the substrate after the plasma etching processing has been carried out.

摘要翻译： 提供了一种在基板处理系统中实现的基板处理方法，该基板处理系统包括在基板上执行等离子体蚀刻处理的蚀刻装置和连接有蚀刻装置的真空型基板转印装置。 第一步骤包括在进行等离子体蚀刻处理之前在基板的后表面上形成保护膜。 保护膜防止在等离子体蚀刻处理期间静电吸引基板的静电卡盘刮擦基板的后表面。 第二步骤包括静电吸引基板到静电卡盘，使得静电卡盘直接接触基板的后表面并对基板进行等离子体蚀刻处理。 第三步骤包括在进行等离子体蚀刻处理之后从衬底的后表面去除保护膜。