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292 条记录 (耗时 0.043 秒)

    Local air cleaning apparatus
    3.
    发明授权
    Local air cleaning apparatus 有权

    公开(公告)号：US10197302B2

    公开(公告)日：2019-02-05

    申请号：US14234737

    申请日：2012-06-22

    申请人： Taketo Suzuki ,  Tomoyuki Kakinuma ,  Kozo Nitta ,  Yuki Fujishiro ,  Kazuma Fukiura ,  Takahiro Sato

    发明人： Taketo Suzuki ,  Tomoyuki Kakinuma ,  Kozo Nitta ,  Yuki Fujishiro ,  Kazuma Fukiura ,  Takahiro Sato

    IPC分类号： F24F3/16 ,  F24F13/068

    摘要： A local air cleaning apparatus (1) is provided with a push hood (2) having an air flow opening face (23) for blowing out a cleaned uniform air flow and a guide (3) provided on a side of the push hood (2) having the air flow opening face (23), the guide (3) extending from the side thereof having the air flow opening face (23) toward a downstream side of the uniform air flow to form an opening face (31) at a downstream end portion thereof. The push hood (2) is arranged such that the uniform air flow blown out from the air flow opening face (23) passes through the inside of the guide (3) and then collides with an air collision face (W) on a downstream side of the opening face (31). The opening face (31) of the guide (3) is spaced apart from and opposed to the air collision face (W) to form an open region between the opening face (3) and the air collision face (W). The cleaned uniform air flow blown out from the air flow opening face (23) collides with the air collision face (W) and flows out of the opening region, thereby allowing the inside of the guide (3) and the inside of the open region to have higher cleanliness than other regions.

    Light emitting device
    6.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08921870B2

    公开(公告)日：2014-12-30

    申请号：US13037740

    申请日：2011-03-01

    申请人： Takahiro Sato ,  Shinya Nunoue

    发明人： Takahiro Sato ,  Shinya Nunoue

    IPC分类号： H01L29/18 ,  H01L25/075 ,  H01L33/60

    CPC分类号： H01L25/0753 ,  H01L33/60 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265

    摘要： According to one embodiment, a light emitting device includes a base substrate, first and second substrates, first and second semiconductor light emitting elements. The first and second substrates are provided on a major surface of the base substrate and include first and second reflection regions, respectively. The first and second semiconductor light emitting elements include first and second structural bodies including first and second light emitting layers, respectively. Each of the first and second semiconductor light emitting elements is inputted with a power not less than 1 Watt. An area of a face of the first semiconductor light emitting element is S1, and a gap between the first light emitting layer and the first substrate is t1. An area R1 of the first reflection region satisfies a relationship (S1+100t12)≦R1≦(S1+10000t12). A gap L between the first and the second semiconductor light emitting elements satisfies the relationships 100t1≦L≦10000t1.

    摘要翻译： 根据一个实施例，发光器件包括基底衬底，第一和第二衬底，第一和第二半导体发光元件。 第一和第二基板设置在基底基板的主表面上，分别包括第一和第二反射区域。 第一和第二半导体发光元件分别包括包括第一和第二发光层的第一和第二结构体。 第一和第二半导体发光元件中的每一个都输入不小于1瓦特的功率。 第一半导体发光元件的面的面积为S1，第一发光层与第一基板的间隔为t1。 第一反射区域的区域R1满足关系（S1 + 100t12）＆nlE; R1＆nlE;（S1 + 10000t12）。 第一和第二半导体发光元件之间的间隙L满足关系式100t1＆nlE; L＆nlE; 10000t1。

    Electrostatic protection component
    8.
    发明授权
    Electrostatic protection component 有权
    静电保护元件

    公开(公告)号：US08724284B2

    公开(公告)日：2014-05-13

    申请号：US13475376

    申请日：2012-05-18

    申请人： Hidenobu Umeda ,  Makoto Yoshino ,  Takahiro Sato ,  Takuo Hattori ,  Shinichi Sato ,  Takeshi Shibayama

    发明人： Hidenobu Umeda ,  Makoto Yoshino ,  Takahiro Sato ,  Takuo Hattori ,  Shinichi Sato ,  Takeshi Shibayama

    IPC分类号： H01H47/00

    CPC分类号： H05F3/04 ,  H01G4/40 ,  H01T2/00 ,  H01T4/12 ,  H05K9/0067 ,  H05K9/0079

    摘要： An electrostatic protection component includes: a body in which a plurality of ceramic substrates is laminated; and a pair of discharge electrodes which are formed within the body and which are spaced to face each other. The discharge electrodes include main body portions extending along a longitudinal direction, and the main body portions include tips in the longitudinal direction and side edges extending along the longitudinal direction. The pair of discharge electrodes are arranged such that both the main body portions are adjacent to each other in a short direction. The discharge electrodes face each other in the short direction between the side edges, and discharge occurs only between the side edges, between the discharge electrodes.

    摘要翻译： 静电保护部件包括：层叠有多个陶瓷基板的主体; 以及一对放电电极，其形成在主体内并且彼此间隔开。 放电电极包括沿着纵向方向延伸的主体部分，并且主体部分包括沿纵向方向的尖端和沿着纵向方向延伸的侧边缘。 一对放电电极被布置成使得两个主体部分在短方向上彼此相邻。 放电电极在侧边缘之间在短的方向上彼此面对，并且放电仅在放电电极之间的侧边缘之间发生。

    Semiconductor light emitting device
    9.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08653498B2

    公开(公告)日：2014-02-18

    申请号：US13032943

    申请日：2011-02-23

    申请人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/40 ,  H01L33/04

    CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。 层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。 第一电极包括第一接触电极部分。 第二电极包括第二接触电极部分和p侧焊盘电极。 第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

    CAST-STEEL POURING APPARATUS
    10.
    发明申请
    CAST-STEEL POURING APPARATUS 有权

    公开(公告)号：US20140015174A1

    公开(公告)日：2014-01-16

    申请号：US13985696

    申请日：2012-02-22

    申请人： Takahiro Sato ,  Shinichi Cyomatsuken ,  Zhong-zhi Zhang ,  Toru Hanai ,  Hideto Terada ,  Masayuki Kato ,  Hidemi Hattori

    发明人： Takahiro Sato ,  Shinichi Cyomatsuken ,  Zhong-zhi Zhang ,  Toru Hanai ,  Hideto Terada ,  Masayuki Kato ,  Hidemi Hattori

    IPC分类号： B22D41/06 ,  B22D41/01

    CPC分类号： B22D41/06 ,  B22D41/01

    摘要： A cast-steel pouring apparatus is provided, cast-steel pouring apparatus which can contribute to shortening a casting time for casting molten steel of cast steel into a sprue of casting mold. A first axial line of a first pivot shaft is positioned on a more diametrically inner side than is a first imaginary extension line of an outer-circumference wall face in a furnace-body main body, and is positioned on a more diametrically outer side than is a second imaginary extension line of an inner-circumference wall face in a fire-retardant lining material that the furnace-body main body has. As a steel-outing trough unit protrudes from a furnace body upward or upward and outward obliquely, a steel-outing leading end of the steel-outing trough unit is positioned on a more diametrically inner side than is the first imaginary extension line of the outer-circumference wall face in the furnace-body main body, and is positioned on a more diametrically outer side than is the second imaginary extension line of the inner-circumference wall race in the fire-retardant lining material that the furnace-body main body has.

    摘要翻译： 本发明提供一种铸钢浇注装置，其可以有助于缩短将铸钢的钢水浇铸到铸模浇口中的铸造时间。 第一枢转轴的第一轴线位于比炉体主体的外周壁面的第一假想延伸线更直径的内侧，并且位于比直径方向的外侧更靠外侧 在炉体主体具有的阻燃衬里材料中的内周壁面的第二假想延伸线。 作为钢出口槽单元从炉体向上或向上倾斜向外突出，出钢槽单元的出钢前端位于比外侧的第一虚线延伸线更直径的内侧 - 炉体主体中的圆周壁面，并且位于比炉体主体具有的阻燃衬里材料中的内周壁圈的第二假想延伸线的更直径的外侧 。