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1.发明授权Oxide film with preferred crystal orientation, method of manufacturing the same, and magneto-optical recording medium 失效具有优选晶体取向的氧化物膜，其制造方法和磁光记录介质
公开(公告)号：US5607781A
公开(公告)日：1997-03-04
申请号：US329514
申请日：1994-05-26
申请人： Shiho Okuno , Susumu Hashimoto , Koichiro Inomata
发明人： Shiho Okuno , Susumu Hashimoto , Koichiro Inomata
IPC分类号： C23C14/58 , C23C14/08 , C23C14/22 , C23C14/46 , C30B23/02 , G11B11/10 , G11B11/105 , H01F10/20 , H01F41/18 , G11B5/66 , C23C14/00 , B05D5/12
CPC分类号： C23C14/08 , C23C14/221 , C23C14/46 , C30B23/02 , C30B29/16 , Y10S428/90
摘要： An oxide film having, for example, a spinel structure is deposited on a substrate, and ions of an inert gas such as He, Ar, Ne, Kr, or Xe, oxygen gas ions, or metal ion of a film constituting element are radiated onto the film during deposition, thereby to obtain an oxide thin film in which a specific crystal direction is oriented.
摘要翻译： 将具有例如尖晶石结构的氧化物膜沉积在基板上，并且照射成膜组成元素的诸如He，Ar，Ne，Kr或Xe的惰性气体，氧气离子或金属离子的离子 在沉积期间在膜上，从而获得其中特定晶体方向取向的氧化物薄膜。
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公开(公告)号：US5534355A
公开(公告)日：1996-07-09
申请号：US424082
申请日：1995-04-19
IPC分类号： C22C45/02 , C23C14/34 , G11B5/39 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/26 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/08 , H01L43/10 , G11B5/66 , B32B15/01
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3281 , H01F41/302 , H01L43/10 , G11B5/3903 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12632 , Y10T428/12819 , Y10T428/12854 , Y10T428/12861 , Y10T428/12889 , Y10T428/12903 , Y10T428/12944 , Y10T428/12951 , Y10T428/24942 , Y10T428/265
摘要： Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
摘要翻译： 公开了一种人造层叠体，其中交替地层叠铁磁性层和非磁性层，其中沿预定方向将单轴磁各向异性引入到铁磁层中，从而控制电阻率相对于外部磁场变化的梯度。 在形成铁磁层期间，通过在铁磁层的表面施加磁场，将单轴磁各向异性引入铁磁层。
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公开(公告)号：US5616370A
公开(公告)日：1997-04-01
申请号：US636460
申请日：1996-04-23
IPC分类号： C22C45/02 , C23C14/34 , G11B5/39 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/26 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/08 , H01L43/10 , G11B5/852
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3281 , H01F41/302 , H01L43/10 , G11B5/3903 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12632 , Y10T428/12819 , Y10T428/12854 , Y10T428/12861 , Y10T428/12889 , Y10T428/12903 , Y10T428/12944 , Y10T428/12951 , Y10T428/24942 , Y10T428/265
摘要： Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
摘要翻译： 公开了一种人造层叠体，其中交替地层叠铁磁性层和非磁性层，其中沿预定方向将单轴磁各向异性引入到铁磁层中，从而控制电阻率相对于外部磁场变化的梯度。 在形成铁磁层期间，通过在铁磁层的表面施加磁场，将单轴磁各向异性引入铁磁层。
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公开(公告)号：US5700588A
公开(公告)日：1997-12-23
申请号：US613170
申请日：1996-03-08
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 含有Fe，Co和Ni三种磁性元素的磁性层。 任何两个彼此相邻的磁性层，其中一个非磁性层插入其间，在基本不施加磁场的条件下进行反铁磁耦合。
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公开(公告)号：US5578385A
公开(公告)日：1996-11-26
申请号：US364524
申请日：1994-12-27
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 磁性层含有至少两个选自由Fe，Co和Ni组成的一组磁性元素的磁性元素。 彼此相邻的两个磁性层，其间插入非磁性层之一，在基本不施加磁场的条件下进行反铁磁耦合。
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公开(公告)号：US5523172A
公开(公告)日：1996-06-04
申请号：US234863
申请日：1994-04-28
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 磁性层含有至少两个选自由Fe，Co和Ni组成的一组磁性元素的磁性元素。 任何两个彼此相邻的磁性层，其中一个非磁性层插入其间，在基本不施加磁场的条件下进行反铁磁耦合。
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公开(公告)号：US5500633A
公开(公告)日：1996-03-19
申请号：US323809
申请日：1994-10-17
CPC分类号： H01L43/10
摘要： A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.
摘要翻译： 磁阻效应元件包括交替的磁性和非磁性层的多层堆叠，并且具有由介于相邻的堆叠的磁性和非磁性层之间的铁磁性元件和非铁磁性元件的混合物构成的混合层，以便表现出磁阻 影响。 多层堆叠包括至少两个磁性层，至少两个混合层和至少一个非磁性层。 2（X1 / Xn）/ n大于1.1，其中n是混合层的原子层数，X1是最靠近磁层的原子层的铁磁元素的原子浓度（％），Xn是 最接近非磁性层的第n个原子层的铁磁性元素的原子浓度（％）。
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公开(公告)号：US5773156A
公开(公告)日：1998-06-30
申请号：US591350
申请日：1996-01-25
CPC分类号： H01L43/10 , H01F1/0063 , Y10T428/12014 , Y10T428/12465 , Y10T428/12528 , Y10T428/12674
摘要： A magnetoresistance effect element comprises a magnetic body obtained by dispersing magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni in a semiconductor matrix.
摘要翻译： 磁阻效应元件包括通过将含有选自Fe，Co和Ni中的至少一种磁性元素的磁性金属颗粒分散在半导体基体中而获得的磁体。
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公开(公告)号：US5585196A
公开(公告)日：1996-12-17
申请号：US208600
申请日：1994-03-11
CPC分类号： B82Y25/00 , G01R33/093 , H01F10/007 , H01F10/3227 , H01L43/10 , Y10S428/90 , Y10T428/1129 , Y10T428/12097 , Y10T428/12118 , Y10T428/12465 , Y10T428/12493 , Y10T428/12882 , Y10T428/1291 , Y10T428/265 , Y10T428/2982
摘要： There is disclosed a magnetoresistance effect element including a multilayer constituted by a magnetic layers in which fine magnetic metal particles of crystalline or amorphous containing at least one element of Fe, Co, and Ni are dispersed in a matrix containing at least one element selected from the group consisting of noble metals and Cu, and non-magnetic layers containing a noble metal.
摘要翻译： 公开了一种磁电阻效应元件，其包括由磁性层构成的多层，其中含有Fe，Co和Ni的至少一种元素的结晶或无定形的细磁性金属颗粒分散在含有至少一种选自 由贵金属和Cu组成的组以及含有贵金属的非磁性层。
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公开(公告)号：US5365212A
公开(公告)日：1994-11-15
申请号：US100427
申请日：1993-08-02
CPC分类号： H01L43/10
摘要： A magnetoresistance effect element includes a multilayer in which magnetic layers, mixture layers each constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element, and nonmagnetic layers are stacked on each other so as to exhibit a magnetoresistance effect. In this element, each of the mixture layers is interposed between the magnetic layer and the nonmagnetic layer, and 2 (X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is the atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is the atomic concentration (%) of the ferromagnetic element of an n-th atomic layer closest to the nonmagnetic layer.
摘要翻译： 磁阻效应元件包括多层，其中磁性层，各自由铁磁性元件和非铁磁性元件的混合物构成的混合层和非磁性层彼此堆叠以呈现磁阻效应。 在该元件中，每个混合层插入在磁性层和非磁性层之间，2（X1 / Xn）/ n大于1.1，其中n是混合层的原子层数，X1是原子 最靠近磁性层的原子层的铁磁性元素的浓度（％），Xn是最靠近非磁性层的第n原子层的铁磁性元素的原子浓度（％）。
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