公开(公告)号：US06589435B1

公开(公告)日：2003-07-08

申请号：US09674482

申请日：2000-11-08

申请人： Shin Okamoto ,  Shunichi Iimuro

发明人： Shin Okamoto ,  Shunichi Iimuro

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： Contact holes (36a, 36b) are formed by means of plasma etching, such that the contact holes are formed from the top surface of a silicon oxide insulating film (31) down to a wiring layer (33a) at a deep position and a wiring layer (33b) at a shallow position, respectively, which are embedded in the insulating film (31). A process gas containing C4F8, CO, and Ar is used, while the process pressure is set to be from 30 to 60 mTorr, and the partial pressure of the C4F8 gas is set to be from 0.07 to 0.35 mTorr. Under these conditions, the process gas is turned into plasma, and the insulating film (31) is etched with the plasma to form the contact holes (36a, 36b).

摘要翻译： 通过等离子体蚀刻形成接触孔（36a，36b），使得接触孔从氧化硅绝缘膜（31）的顶表面形成为深度到布线层（33a）和布线 层（33b）分别嵌入在绝缘膜（31）中的浅位置处。 使用含有C4F8，CO和Ar的工艺气体，同时将工艺压力设定为30〜60mTorr，将C4F8气体的分压设定为0.07〜0.35mTorr。 在这些条件下，处理气体变成等离子体，用等离子体蚀刻绝缘膜（31），形成接触孔（36a，36b）。

公开(公告)号：US08287750B2

公开(公告)日：2012-10-16

申请号：US12686899

申请日：2010-01-13

申请人： Toshihiko Shindo ,  Shin Okamoto ,  Kimihiro Higuchi

发明人： Toshihiko Shindo ,  Shin Okamoto ,  Kimihiro Higuchi

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J2237/004 ,  H01L21/6831

摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

公开(公告)号：US07541283B2

公开(公告)日：2009-06-02

申请号：US11066260

申请日：2005-02-28

申请人： Toshihiko Shindo ,  Shin Okamoto ,  Kimihiro Higuchi

发明人： Toshihiko Shindo ,  Shin Okamoto ,  Kimihiro Higuchi

IPC分类号： H01L21/44

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J2237/004 ,  H01L21/6831

摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

公开(公告)号：US07326650B2

公开(公告)日：2008-02-05

申请号：US10399626

申请日：2001-10-01

申请人： Yoshihide Kihara ,  Shin Okamoto ,  Koichiro Inazawa ,  Tomoki Suemasa

发明人： Yoshihide Kihara ,  Shin Okamoto ,  Koichiro Inazawa ,  Tomoki Suemasa

IPC分类号： H01L21/302

CPC分类号： H01L21/76835 ,  H01L21/76811 ,  H01L21/76813

摘要： In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard mask in order to prevent shoulder sag. By adopting this method, a dual damascene structure in which the extent of the shoulder sag at the hard mask is minimized can be achieved through etching.

摘要翻译： 在通过使用至少一层低k膜和至少一层硬掩模层来实现双镶嵌结构的蚀刻方法中，最终不留在双镶嵌结构中的虚拟膜形成在 至少一层在硬掩模上，以防止肩下垂。 通过采用这种方法，可以通过蚀刻来实现在硬掩模处的肩部凹陷的程度最小化的双镶嵌结构。

公开(公告)号：US07300881B2

公开(公告)日：2007-11-27

申请号：US10935103

申请日：2004-09-08

申请人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

发明人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/31138

摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

摘要翻译： 在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括 具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。 非反应性气体还包括氩气。

公开(公告)号：US5705081A

公开(公告)日：1998-01-06

申请号：US531713

申请日：1995-09-21

申请人： Koichiro Inazawa ,  Shin Okamoto ,  Yoshifumi Tahara

发明人： Koichiro Inazawa ,  Shin Okamoto ,  Yoshifumi Tahara

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31116 ,  H01L21/3065

摘要： An etching apparatus comprises a pair of electrodes provided to face each other in a processing vessel, a permanent magnet for forming a magnetic field substantially parallel to a surface of a to-be-processed object which is placed between the paired electrodes, a gas introduction section for introducing etching gas into the processing vessel, a high-frequency generator for applying high-frequency voltage to the paired electrodes for generating plasma, and a high-frequency control section for preventing plasma from being unevenly distributed by starting and stopping the application of high-frequency voltage by the high-frequency generator at fixed intervals.

摘要翻译： 蚀刻装置包括在处理容器内设置成彼此相对的一对电极，用于形成基本上平行于被配置在一对电极之间的待处理物体的表面的磁场的永磁体，气体导入 将用于将蚀刻气体引入处理容器的部分，将高频电压施加到用于产生等离子体的成对电极的高频发生器，以及用于通过启动和停止应用来防止等离子体不均匀分布的高频控制部分 高频电压由高频发生器固定间隔。

公开(公告)号：US08641916B2

公开(公告)日：2014-02-04

申请号：US12692913

申请日：2010-01-25

申请人： Koichi Yatsuda ,  Yoshinobu Ooya ,  Shin Okamoto ,  Hiromasa Mochiki

发明人： Koichi Yatsuda ,  Yoshinobu Ooya ,  Shin Okamoto ,  Hiromasa Mochiki

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32146 ,  H01J37/32091 ,  H01J37/32697

摘要： A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.

摘要翻译： 提供了一种通过等离子体处理装置在蚀刻靶膜中形成孔的等离子体蚀刻方法。 该装置包括用于向上电极和下电极中的至少一个施加用于等离子体产生的RF功率的RF电源，以及用于向上电极施加负DC电压的DC电源。 通过接通RF电源产生等离子体的第一条件和负DC电压被施加到上电极，并且通过关闭RF电源而将等离子体熄灭的第二条件并且将负DC电压施加到上电极 交替重复。 在第一条件下，通过正离子在等离子体中进行蚀刻，并且通过DC电压将负离子供给到孔中，以在第二条件下中和孔中的正离子。

公开(公告)号：US20100112819A1

公开(公告)日：2010-05-06

申请号：US12686899

申请日：2010-01-13

申请人： Toshihiko SHINDO ,  Shin Okamoto ,  Kimihiro Higuchi

发明人： Toshihiko SHINDO ,  Shin Okamoto ,  Kimihiro Higuchi

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J2237/004 ,  H01L21/6831

摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

公开(公告)号：US06743376B2

公开(公告)日：2004-06-01

申请号：US09941717

申请日：2001-08-30

申请人： Shin Okamoto ,  Manabu Hirakawa

发明人： Shin Okamoto ,  Manabu Hirakawa

IPC分类号： C09K1952

CPC分类号： C08L67/00 ,  B29C67/24 ,  B29K2105/0079 ,  C08L23/06 ,  C08L67/04 ,  C08L2666/06

摘要： A liquid-crystalline resin composition comprising 0.01 to 10 parts by weight of an ultra-high molecular weight polyethylene having a molecular weight of exceed 600,000 and 100 parts by weight of a liquid-crystalline resin that shows an anisotropic liquid-crystalline state in a molten state.

摘要翻译： 一种液晶树脂组合物，其包含0.01至10重量份的分子量超过600,000的超高分子量聚乙烯和100重量份液晶树脂，所述液晶树脂在熔融状态下显示各向异性液晶状态 州。

公开(公告)号：US06488863B2

公开(公告)日：2002-12-03

申请号：US09970852

申请日：2001-10-05

申请人： Koichi Yatsuda ,  Tetsuya Nishiara ,  Kouichiro Inazawa ,  Shin Okamoto

发明人： Koichi Yatsuda ,  Tetsuya Nishiara ,  Kouichiro Inazawa ,  Shin Okamoto

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： An etching gas is supplied into a process chamber and turned into plasma so as to etch a silicon nitride film arranged on a field silicon oxide film on a wafer (w). A mixture gas containing at least CH2F2 gas and O2 gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH2F2/O2) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.