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    Resonator, filter and fabrication of resonator
    1.
    发明授权
    Resonator, filter and fabrication of resonator 有权
    谐振器的谐振器，滤波器和制造

    公开(公告)号：US07498717B2

    公开(公告)日：2009-03-03

    申请号：US11092979

    申请日：2005-03-30

    申请人： Tsuyoshi Yokoyama ,  Tokihiro Nishihara ,  Takeshi Sakashita ,  Shinji Taniguchi ,  Masafumi Iwaki ,  Masanori Ueda ,  Tsutomu Miyashita

    发明人： Tsuyoshi Yokoyama ,  Tokihiro Nishihara ,  Takeshi Sakashita ,  Shinji Taniguchi ,  Masafumi Iwaki ,  Masanori Ueda ,  Tsutomu Miyashita

    IPC分类号： H01L41/09

    CPC分类号： H03H3/04 ,  H03H9/02094 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/023 ,  H03H2003/0428

    摘要： A resonator includes a piezoelectric thin-film provided on a main surface of a substrate, a first electrode film provided on a first surface of the piezoelectric thin-film, a second electrode film provided on a second surface of the piezoelectric thin-film, a frequency adjustment film provided on one of the first and second electrode films, the frequency adjustment film comprising a film laminate including a first adjustment film provided on said one of the first and second electrode films, and a second adjustment film provided on the first adjustment film. The first adjustment film is used for Δf adjustment, and the second adjustment film is used for correcting frequency deviations generated in the filter manufacturing process. Thus, it is possible to accurately control the center frequency of the filter in which the multiple resonators are connected.

    摘要翻译： 谐振器包括设置在基板的主表面上的压电薄膜，设置在压电薄膜的第一表面上的第一电极膜，设置在压电薄膜的第二表面上的第二电极膜， 频率调节膜，其设置在所述第一和第二电极膜中的一个上，所述频率调节膜包括膜层叠体，所述膜层叠体包括设置在所述第一和第二电极膜中的所述一个上的第一调节膜，以及设置在所述第一调节膜上的第二调节膜 。 第一调节膜用于Deltaf调节，第二调节膜用于校正过滤器制造过程中产生的频率偏差。 因此，可以精确地控制多个谐振器连接的滤波器的中心频率。

    FILM BULK ACOUSTIC RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION APPARATUS
    9.
    发明申请
    FILM BULK ACOUSTIC RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION APPARATUS 有权
    电影大容量声学谐振器，滤波器，通信模块和通信设备

    公开(公告)号：US20110006860A1

    公开(公告)日：2011-01-13

    申请号：US12921150

    申请日：2008-03-04

    申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

    发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

    IPC分类号： H03H9/17 ,  H01L41/053

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021 ,  H03H2003/023

    摘要： A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.

    摘要翻译： 本发明的压电薄膜谐振器具有基板1，设置在基板1上并由绝缘体形成的中间层7，设置在中间层7上的下部电极3，设置在下部电极3上的压电膜4 以及设置在面向下电极3的位置上的上电极5，其间插入压电膜4，其中在下电极3和上电极5彼此面对的谐振区域8中形成有空间6 在基板1和中间层7中，或在下部电极3和中间层7之间，并且空间6的区域包含在谐振区域8中。通过这种结构，振动能量从基板 可以抑制共振部分，从而提高质量因素。