SEMICONDUCTOR OPTICAL DEVICE
    3.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICE 有权
    半导体光学器件

    公开(公告)号:US20130126941A1

    公开(公告)日:2013-05-23

    申请号:US13613177

    申请日:2012-09-13

    IPC分类号: H01L31/105

    摘要: A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.

    摘要翻译: 半导体光学器件包括第一覆盖层,第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层,其中,光波导层包括第一半导体层,第二半导体层,设置在第一覆盖层 半导体层并且沿一个方向延伸,以及覆盖第二半导体层的顶表面的第三半导体层,并且其中第一半导体层包括设置在第二半导体层一侧的n型区域,p型区域 设置在第二半导体层的另一侧,以及设置在n型区域和p型区域之间的i型区域,并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。

    Semiconductor optical device
    4.
    发明授权
    Semiconductor optical device 有权
    半导体光学器件

    公开(公告)号:US08809906B2

    公开(公告)日:2014-08-19

    申请号:US13613177

    申请日:2012-09-13

    IPC分类号: H01L31/102

    摘要: A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.

    摘要翻译: 半导体光学器件包括第一覆盖层,第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层,其中,光波导层包括第一半导体层,第二半导体层,设置在第一覆盖层 半导体层并且沿一个方向延伸,以及覆盖第二半导体层的顶表面的第三半导体层,并且其中第一半导体层包括设置在第二半导体层一侧的n型区域,p型区域 设置在第二半导体层的另一侧,以及设置在n型区域和p型区域之间的i型区域,并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。

    Reflective semiconductor optical amplifier with constant gain versus wavelength
    6.
    发明授权
    Reflective semiconductor optical amplifier with constant gain versus wavelength 有权
    具有恒定增益对波长的反射半导体光放大器

    公开(公告)号:US09001415B2

    公开(公告)日:2015-04-07

    申请号:US12824653

    申请日:2010-06-28

    申请人: Shinsuke Tanaka

    发明人: Shinsuke Tanaka

    摘要: A semiconductor optical amplifier includes a semiconductor substrate; an active layer that includes a first region and a second region formed over the semiconductor substrate; and a reflection part that is formed along the second region and includes a first portion that reflects a first wavelength light and a second portion that reflects a second wavelength light with an optical gain lower than an optical gain of the first wavelength light; wherein, the first portion is formed closer to the first region side than the second portion.

    摘要翻译: 半导体光放大器包括半导体衬底; 有源层,其包括形成在所述半导体衬底上的第一区域和第二区域; 以及反射部,其沿着所述第二区域形成并且包括反射第一波长光的第一部分和以比所述第一波长光的光学增益低的光增益反射第二波长光的第二部分; 其中,所述第一部分形成为比所述第二部分更靠近所述第一区域侧。

    Indwelling apparatus for body cavity introducing device and body cavity introducing device placing system
    7.
    发明授权
    Indwelling apparatus for body cavity introducing device and body cavity introducing device placing system 有权
    体腔引入装置和体腔引入装置放置系统的留置装置

    公开(公告)号:US08790248B2

    公开(公告)日:2014-07-29

    申请号:US11884669

    申请日:2006-07-20

    IPC分类号: A61B1/00

    摘要: An indwelling apparatus (5) for holding a capsule endoscope (3) is arranged with a control device (57) including an optical sensor (73), a control board (66) configuring a controller and a reset circuit, a driver board (68) configuring an electromagnet driver, and an electromagnet (70), where when the optical sensor (73) detects the light, the controller performs the drive control of the electromagnet (70) at every constant time interval to turn ON the reed switch (14) and supply power to the capsule endoscope (3) thereby operating the capsule endoscope (3) only when observation is necessary, and thus the battery drain of the capsule endoscope is reduced.

    摘要翻译: 用于保持胶囊型内窥镜(3)的留置装置(5)配置有包括光学传感器(73),构成控制器和复位电路的控制基板(66)的控制装置(57),驱动器板 )和电磁体(70),其中当所述光学传感器(73)检测到所述光时,所述控制器以每个恒定时间间隔执行所述电磁体(70)的驱动控制以接通所述舌簧开关(14) ),并且仅在需要观察时才向胶囊型内窥镜(3)供电,从而操作胶囊型内窥镜(3),因此能够减小胶囊型内窥镜的电池消耗。

    Optical semiconductor device and manufacturing method therefor

    公开(公告)号:US08547630B2

    公开(公告)日:2013-10-01

    申请号:US12498425

    申请日:2009-07-07

    申请人: Shinsuke Tanaka

    发明人: Shinsuke Tanaka

    IPC分类号: H01S5/00

    摘要: A manufacturing method for an optical semiconductor device, including disposing a semiconductor element that has a polarization dependent gain or polarization dependent loss between optical waveguide modes differing in the direction of polarization, positioning a lens at one end face side of the semiconductor element based on an optical coupling loss between the lens and the semiconductor element, and repositioning the lens based on the polarization dependent gain or the polarization dependent loss of the semiconductor element.