摘要:
According to this invention, there is disclosed a thermal conductivity substrate which includes an aluminum nitride sintered body and a coating layer formed on the body of aluminum phosphate and having a surface roughness of 1 .mu.m or less, and which has excellent humidity resistance and chemical resistance.
摘要:
According to this invention, there is disclosed a compact power circuit breaker having a large breaking capacity and stable breaking performance due to a compact closing resistor unit having high performance. The power circuit breaker includes a main switching mechanism having an arc extinguishing function, an auxiliary switching mechanism parallelly connected to the main switching mechanism and having an arc extinguishing function, and a closing resistor unit connected in series with the auxiliary switching mechanism and incorporated with a resistor containing zinc oxide (ZnO) as a main component and titanium figured out as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol% and nickel figured out as nickel oxide (NiO) in an amount of 0.5 to 30 mol. % as sub-components.
摘要:
Barium-ferrite series powders are prepared from an alkaline aqueous solution containing a prescribed ratio of ions of the metals equal to those contained in the powder. In the first stage, the alkaline aqueous solution is heated at a constant volume at 150.degree. to 300.degree. C. to precipitate a precursor of the barium-ferrite series powder. Then, the precursor is baked at 700.degree. to 1,000.degree. C. to crystallize the precursor.
摘要:
High-purity molybdenum or tungsten powder can be produced by a process comprising (a) decomposing a powder or an oxide powder of molybdenum or tungsten with hydrogen peroxide water; (b) bringing the resulting aqueous solution of molybdenum or tungsten into contact with a cation exchange resin; (c) concentrating the aqueous solution; and (d) reducing a concentrated solid material. By omitting reducing step (d), one can obtain high-purity molybdenum or tungsten oxide powders. Because the Mo and W powders and MoO.sub.3 and WO.sub.3 powders prepared by this invention are of an extremely high purity, they are useful as materials for targets of VLSI elements.
摘要:
According to the present invention, there is provided an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of a AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen. According to the present invention, there is provided a method of fabricating an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen, wherein a molded body prepared by mixing and molding an aluminum nitride power having less than 7 wt % of oxygen and an average particle size of 0.05 to 5 .mu.m and with rare earth compounds of 0.01 to 15 wt % of based on rare earth elements content, or a sintered AlN body containing oxide grain boundary phases of 0.01 to 15 wt % of rare earth elements and 0.01 to 20 wt % of oxygen and (rare earth element)--Al--O compounds phases and/or (rare earth element)--O compounds phases, is fired in a reducing atmosphere at a temperature of 1,550 to 2,050.degree. C. for 4 hours or more.
摘要:
A metal oxide varistor is disclosed which a component of grain bodies comprised of zinc oxide and a component of grain boundary layers comprised of another metallic oxide, containing metal other than zinc wherein at least a portion of these starting materials comprised a fine particle powder prepared by a co-precipitatin method.The metal oxide varistor of the present invention is excellent in varistor characteristics such as non-linearity to voltage, life performances and capability of energy dissipation, is small in a scatter of the above characteristics between manufacture lots or within each lot at the time of manufacture, and has a good quality stability. Unexpected results are obtained when the co-precipitated fine particles are subjected to a refrigeration-dehydration type process.
摘要:
A semiconductor device includes a GaN electron transport layer provided over a substrate; a first AlGaN electron supply layer provided over the GaN electron transport layer; an AlN electron supply layer provided over the first AlGaN electron supply layer; a second AlGaN electron supply layer provided over the AlN electron supply layer; a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer; and a gate electrode provided over the gate recess.
摘要:
There is provided an image taking apparatus capable of preferably correcting both the camera shake and the subject shake in the still picture photography. The image taking apparatus has a system control section that determines whether a subject is a still subject or a dynamic subject. When the system control section determines that the subject is the still subject, the system control section instructs a timing generation section to cause an imaging section to generate a series of images, so that an image piling up section performs piling up of images in accordance with a computed result with a movement vector computing section. Thus, the camera shake is corrected. When the system control section determines that the subject is the dynamic subject, the system control section instructs the timing generation section to perform a single photography at a predetermined shutter time free from the subject shake.
摘要:
A semiconductor memory card which can be attached to a host apparatus and can be removed from the host apparatus includes a plurality of data transfer terminals, and an internal circuit transmitting a first signal to at least one first data transfer terminal comprising at least one of the data transfer terminals and transmitting a second signal to at least one second data transfer terminal comprising at least one of the data transfer terminals different from the first data transfer terminals. The second signal is generated by executing a logical operation on the first signal.
摘要:
An electrode module includes a working electrode, a counter electrode, a reference electrode and a well (container) for retaining an electrolytic solution and is used in electrochemical measuring instruments. This electrode module is produced by integrating the well with at least one of the working electrode, the counter electrode and the reference electrode. This integrated electrode includes a chip-like electrode having a thin membrane of an electrode material formed on the surface of a chip-like base metal. This chip-like electrode is disposed on and integrated with the bottom of the well in a detachable manner. There is provided the compact, low price electrode module of high repetition use efficiency with no need of maintenance and having easy handling.