公开(公告)号：US06989281B2

公开(公告)日：2006-01-24

申请号：US10957609

申请日：2004-10-05

申请人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

发明人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

IPC分类号： H01L21/00

CPC分类号： H01L21/67253

摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.

摘要翻译： 半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入 清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量 基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

公开(公告)号：US5766785A

公开(公告)日：1998-06-16

申请号：US506134

申请日：1995-07-24

申请人： Yuuichi Mikata ,  Takashi Nakao ,  Yoshitaka Tsunashima

发明人： Yuuichi Mikata ,  Takashi Nakao ,  Yoshitaka Tsunashima

IPC分类号： H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116 ,  Y10S438/906

摘要： To react the surfaces of a plurality of semiconductor substrates to be treated to reducing gas in a treating chamber, their corresponding members having surfaces opposite to those surfaces of the substrates on which semiconductor devices are to be manufactured, are arranged. The amount of reducing agent supplied to the surfaces of the substrates is controlled by controlling the reaction of the surfaces of the members to the reducing gas, and the progress of the reducing reaction to each of the substrates is controlled accordingly.

摘要翻译： 为了使待处理的多个半导体衬底的表面与处理室中的还原气体反应，它们的相应构件具有与要制造半导体器件的衬底的那些表面相反的表面。 通过控制构件的表面与还原气体的反应来控制供给到基板的表面的还原剂的量，并且相应地控制对各基板的还原反应的进行。

公开(公告)号：US07145667B2

公开(公告)日：2006-12-05

申请号：US10230423

申请日：2002-08-29

申请人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

发明人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

IPC分类号： G01B11/28

CPC分类号： H01L21/67253

摘要： There is here disclosed a semiconductor device manufacturing method, comprising arranging at least one subject piece in a processing chamber, and starting a predetermined processing, applying a light having a predetermined wavelength to a monitoring section which is formed to enable transmission and reflection of the light and which is provided at a tip of a monitoring device to indirectly monitor a thickness of a film on the subject piece, and measuring a reflection light which is the application light is reflected near the monitoring section, while the light and the reflection light are isolated from an atmosphere and a substance in the chamber, measuring an amount of a substance on the monitoring section based on the reflection light, determining a thickness of a film on the subject piece based on the substance, and conducting the processing while controlling the processing based on the thickness of the film.

公开(公告)号：US20050059203A1

公开(公告)日：2005-03-17

申请号：US10957609

申请日：2004-10-05

申请人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

发明人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

IPC分类号： C23C16/52 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  G03B17/24

CPC分类号： H01L21/67253

摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.

摘要翻译： 半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入 清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量 基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

公开(公告)号：US06772045B2

公开(公告)日：2004-08-03

申请号：US10231019

申请日：2002-08-30

申请人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

发明人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

IPC分类号： G06F1900

CPC分类号： H04L12/66 ,  Y10S438/905

摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

摘要翻译： 一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。

公开(公告)号：US6093243A

公开(公告)日：2000-07-25

申请号：US959331

申请日：1997-10-28

申请人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

发明人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/334 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  C30B1/04

CPC分类号： H01L28/82 ,  H01L21/2022 ,  H01L21/28035 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/49 ,  H01L29/78654

摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

摘要翻译： 在低温下通过固相生长形成具有优异晶体质量并提供高可靠性半导体器件的单晶和多晶体。 将非晶薄膜沉积在基板上，使得非晶薄膜的主要构成元素的平均原子间距离为单晶中元素的平均原子间距离的1.02倍或更多，并且施加结晶能 到无定形薄膜进行固相生长，从而形成单晶。 在本发明的另一实施例中，在基板或绝缘膜上形成非晶半导体薄膜，使得膜的主要构成元件的平均原子间距离分布基本上与原子间距离分布平均 元素，并且对非晶半导体薄膜施加结晶能，引起固相生长，从而形成单晶半导体薄膜。

公开(公告)号：US6066872A

公开(公告)日：2000-05-23

申请号：US959330

申请日：1997-10-28

申请人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

发明人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/334 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L31/119

CPC分类号： H01L28/82 ,  H01L21/2022 ,  H01L21/28035 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/49 ,  H01L29/78654

摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

公开(公告)号：US5879447A

公开(公告)日：1999-03-09

申请号：US478765

申请日：1995-06-07

申请人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

发明人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/334 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  C30B19/00

CPC分类号： H01L28/82 ,  H01L21/2022 ,  H01L21/28035 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/49 ,  H01L29/78654

摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

公开(公告)号：US5582640A

公开(公告)日：1996-12-10

申请号：US56443

申请日：1993-04-30

申请人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

发明人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/334 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L28/82 ,  H01L21/2022 ,  H01L21/28035 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/49 ,  H01L29/78654

摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

公开(公告)号：US07772076B2

公开(公告)日：2010-08-10

申请号：US11715965

申请日：2007-03-09

申请人： Atsushi Yagishita ,  Kouji Matsuo ,  Yasushi Akasaka ,  Kyoichi Suguro ,  Yoshitaka Tsunashima

发明人： Atsushi Yagishita ,  Kouji Matsuo ,  Yasushi Akasaka ,  Kyoichi Suguro ,  Yoshitaka Tsunashima

IPC分类号： H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823878 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/1033 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/78 ,  Y10S438/926

摘要： A method of manufacturing a semiconductor device includes forming a dummy gate wiring layer having a side surface and an upper surface on a first area of one major surface of a substrate, the major surface of the substrate including the first area and a second area, thereafter, forming a semiconductor film on the second area of the major surface of the substrate by using epitaxial growth, the semiconductor film having a thickness smaller than a thickness of the dummy gate wiring layer, and forming, on the semiconductor film, a gate sidewall which is made of an insulator and covers the side surface of the dummy gate wiring layer.

摘要翻译： 一种制造半导体器件的方法包括在衬底的一个主表面的第一区域上形成具有侧表面和上表面的虚拟栅极布线层，所述衬底的主表面包括第一区域和第二区域，之后 通过使用外延生长在所述衬底的主表面的第二区域上形成半导体膜，所述半导体膜的厚度小于所述虚拟栅极布线层的厚度，并且在所述半导体膜上形成栅极侧壁，所述栅极侧壁 由绝缘体制成并覆盖虚拟栅极布线层的侧表面。