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75 条记录 (耗时 0.021 秒)

    Light source unit and projector having the same
    1.
    发明授权
    Light source unit and projector having the same 有权
    光源单元和投影机具有相同的功能

    公开(公告)号：US07104654B2

    公开(公告)日：2006-09-12

    申请号：US10778493

    申请日：2004-02-13

    申请人： Shuji Tamaru ,  Kenji Maruyama

    发明人： Shuji Tamaru ,  Kenji Maruyama

    IPC分类号： G03B21/20 ,  F21S8/00

    CPC分类号： H04N9/315 ,  G03B21/20

    摘要： An object of this invention is to provide a light source unit capable of effectively utilizing converged light from a high-pressure discharge lamp by positioning light axes of an ellipsoidal mirror and a lens to coincide.

    摘要翻译： 本发明的目的是提供一种光源单元，其能够通过将椭圆面镜和透镜的光轴定位为一致而能够有效地利用来自高压放电灯的会聚光。

    Semiconductor device and method of manufacturing the same
    4.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07413913B2

    公开(公告)日：2008-08-19

    申请号：US11648546

    申请日：2007-01-03

    申请人： Kenji Maruyama ,  Jeffrey Scott Cross

    发明人： Kenji Maruyama ,  Jeffrey Scott Cross

    IPC分类号： H01L21/00

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.

    摘要翻译： 包括PZT膜的两个铁电电容器连接到一个MOS晶体管。 铁电电容器的电极布置在平行于主平面的基板的主平面上方。 因此，容易获得高容量。 此外，PZT膜的（001）方向平行于连接在两个电极之间的虚拟直线。 因此，施加电场的方向与偏振轴的方向一致，从而可以获得高剩余极化电荷量。

    Flavor and fragrance compositions
    7.
    发明申请
    Flavor and fragrance compositions 有权

    公开(公告)号：US20060160719A1

    公开(公告)日：2006-07-20

    申请号：US11333367

    申请日：2006-01-18

    申请人： Makoto Emura ,  Satoshi Masumura ,  Kenji Maruyama ,  Takeshi Yamamoto

    发明人： Makoto Emura ,  Satoshi Masumura ,  Kenji Maruyama ,  Takeshi Yamamoto

    IPC分类号： A61K47/00 ,  A61K8/46

    CPC分类号： A61K8/46 ,  A61Q13/00

    摘要： The present invention provides a flavor and fragrance composition which comprises, as the active ingredient, an optically active (1S)-8-mercaptomenthone having an S-form/R-form mixing ratio for the configuration at the 4-position in the range of from 65:35 to 95:5 by weight, wherein the flavor and fragrance composition is for use in food and beverage, fragrances and cosmetics, pharmaceuticals or oral compositions and the like; a product which is scented with the flavor and fragrance composition; and a method for enhancing or modulating odor of the flavor and fragrance composition by adding the optically active (1S)-8-mercaptomenthone.

    Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same
    8.
    发明授权
    Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same 有权
    电容器及其制造方法，半导体器件及其制造方法

    公开(公告)号：US06974985B2

    公开(公告)日：2005-12-13

    申请号：US09960398

    申请日：2001-09-24

    申请人： Masaki Kurasawa ,  Kazuaki Kurihara ,  Kenji Maruyama

    发明人： Masaki Kurasawa ,  Kazuaki Kurihara ,  Kenji Maruyama

    IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/108

    CPC分类号： H01L28/55 ,  H01L28/91

    摘要： The semiconductor device comprises: a memory cell transistor formed on a semiconductor substrate 10; insulation films 22, 30 covering the memory cell transistor; a buffer structure 40 formed on the insulation film; and a capacitor including a lower electrode 42 formed on the buffer structure 40 and electrically connected to the source/drain diffused layer 20; a capacitor dielectric film 44 formed on the lower electrode 42, and formed of a perovskite ferroelectric material having a smaller thermal expansion coefficient than that of the buffer structure 40 and having a crystal oriented substantially perpendicular to a surface of the lower electrode 42. The buffer structure for mitigating the influence of the stress from the substrate is formed below the lower electrode, whereby a polarization direction of the capacitor dielectric film can be made parallel with a direction of an electric field applied between the upper electrode and the lower electrode. An intrinsic polarization of the ferroelectric film can be utilized as it is.

    摘要翻译： 半导体器件包括：形成在半导体衬底10上的存储单元晶体管; 覆盖存储单元晶体管的绝缘膜22,30; 形成在绝缘膜上的缓冲结构40; 以及电容器，包括形成在缓冲结构40上并电连接到源/漏扩散层20的下电极42; 形成在下部电极42上的电容电介质膜44，由与缓冲结构体40的热膨胀系数相比具有较小的热膨胀系数的钙钛矿型铁电体材料形成，并具有大致垂直于下部电极42的表面取向的晶体。 用于减轻来自基板的应力的影响的缓冲结构形成在下电极的下方，由此可以使电容器电介质膜的极化方向与施加在上电极和下电极之间的电场的方向平行。 可以直接利用铁电体膜的固有极化。

    Authentication circuit, semiconductor device, process for operating the same, IC card, and process for operating the same
    9.
    发明授权
    Authentication circuit, semiconductor device, process for operating the same, IC card, and process for operating the same 失效
    认证电路，半导体器件，操作过程，IC卡及其操作过程

    公开(公告)号：US06688520B2

    公开(公告)日：2004-02-10

    申请号：US10294711

    申请日：2002-11-15

    申请人： Kenji Maruyama

    发明人： Kenji Maruyama

    IPC分类号： G06K708

    CPC分类号： G06K19/07372 ,  G06K19/073

    摘要： An authentication circuit containing at least two types of ferroelectrics having different Curie temperatures and properties of retaining charges by residual polarization. An authentication signal stored in one of the ferroelectrics is erased when the ferroelectrics are held in a Curie temperature or more of the one of the ferroelectrics and below a Curie temperature of the ferroelectrics 2. In an authentication circuit, preferably one of the ferroelectrics outputs a primary authentication signal and, when the ferroelectric 2 receives the primary authentication signal, the ferroelectric 2 outputs a secondary authentication signal, and a plurality of ferroelectrics are formed of two or more types of elements and have different element compositions, the two or more elements are selected from Na, K, Ba, Cd, Hf, O, Pb, Zr, Ti, La, Ca, Sr, Tl, Bi, a rare earth element, Nb, Ta, W, Mo, Fe, Co, and Cr.

    摘要翻译： 包含至少两种具有不同居里温度的铁电体和通过残余极化保持电荷的性质的认证电路。 当铁电体保持在一个铁电体的居里温度以上且低于铁电体2的居​​里温度时，存储在铁电体之一中的认证信号被擦除。在认证电路中，优选地，铁电体中的一个输出 初级认证信号，当铁电体2接收到初始认证信号时，铁电体2输出二次认证信号，多个铁电体由两种以上的元件形成，具有不同的元件组成， 选自Na，K，Ba，Cd，Hf，O，Pb，Zr，Ti，La，Ca，Sr，Tl，Bi，稀土元素，Nb，Ta，W，Mo，Fe，Co和Cr。

    Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor
    10.
    发明授权
    Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor 失效
    生产II-IV族混合化合物半导体的方法及其使用的装置

    公开(公告)号：US5324386A

    公开(公告)日：1994-06-28

    申请号：US850023

    申请日：1992-03-12

    申请人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    发明人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    IPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/10

    CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/48

    摘要： A method of growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

    摘要翻译： 一种生长混合化合物半导体层的方法包括以下步骤：提供一个反应室，该反应室包括可转动的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基片表面布置， 至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而控制流过每个喷嘴的混合源气体中最活泼气体的流速，这取决于基板旋转的中心轴线与喷嘴之间的距离 ; 并加热衬底。 用于应用上述方法的装置包括用于移动衬底台的特定特征。