公开(公告)号：US08906248B2

公开(公告)日：2014-12-09

申请号：US13324895

申请日：2011-12-13

申请人： Siyi Li ,  Robert C. Hefty ,  Mark Todhunter Robson ,  James R. Bowers ,  Audrey Charles

发明人： Siyi Li ,  Robert C. Hefty ,  Mark Todhunter Robson ,  James R. Bowers ,  Audrey Charles

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/3213 ,  H01L21/311

CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116

摘要： A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.

摘要翻译： 提供了通过在等离子体处理室中的硅氧化物层上的硅层上的氮化硅层的堆叠的方法蚀刻特征。 在等离子体处理室中蚀刻氮化硅层，包括： 流动氮化硅蚀刻气体; 将氮化硅蚀刻气体形成等离子体以蚀刻氮化硅层，并停止氮化硅蚀刻气体的流动。 硅层包括流动硅蚀刻气体，其中硅蚀刻气体包括SF 6或SiF 4，将硅蚀刻气体形成为硅并且阻止硅蚀刻气体的流动。 在等离子体处理室中蚀刻氧化硅层，包括使氧化硅蚀刻气体流动，将氧化硅蚀刻气体形成等离子体，并停止氧化硅蚀刻气体的流动。

公开(公告)号：US20090293907A1

公开(公告)日：2009-12-03

申请号：US12246137

申请日：2008-10-06

申请人： Nancy Fung ,  Siyi Li ,  Ying Rui ,  Walter R. Merry ,  Anchel Sheyner ,  Kathryn Keswick ,  Shing-Li Sung ,  Mang-Mang Ling ,  Chia-Ling Kao ,  Wei-Te Wu ,  Kang-Lie Chiang

发明人： Nancy Fung ,  Siyi Li ,  Ying Rui ,  Walter R. Merry ,  Anchel Sheyner ,  Kathryn Keswick ,  Shing-Li Sung ,  Mang-Mang Ling ,  Chia-Ling Kao ,  Wei-Te Wu ,  Kang-Lie Chiang

IPC分类号： B08B6/00

CPC分类号： H01L21/67069 ,  G03F7/427 ,  H01L21/02087 ,  H01L21/0209

摘要： Methods for cleaning a substrate are provided. In one embodiment, the method includes depositing a polymer on a substrate. A cleaning gas is provided to clean a frontside, a bevel edge, and a backside of the substrate. The cleaning gas may include various reactive chemicals such as H2 and N2 in one embodiment. In another embodiment, the cleaning gas may include H2 and H2O. Plasma is initiated from the cleaning gas and used to remove polymer that formed on a bevel edge, backside, or frontside of the substrate during semiconductor processing.

摘要翻译： 提供了清洗基板的方法。 在一个实施方案中，该方法包括在基底上沉积聚合物。 提供清洁气体以清洁基板的前侧，斜边和背面。 在一个实施方案中，清洁气体可以包括各种反应性化学品，例如H 2和N 2。 在另一个实施方案中，清洁气体可以包括H 2和H 2 O. 等离子体从清洁气体引发，并用于去除在半导体处理期间在衬底的斜边缘，背面或前面形成的聚合物。

公开(公告)号：US07385287B2

公开(公告)日：2008-06-10

申请号：US11744035

申请日：2007-05-03

申请人： Siyi Li ,  Helen H. Zhu ,  Howard Dang ,  Thomas S. Choi ,  Peter Loewenhardt

发明人： Siyi Li ,  Helen H. Zhu ,  Howard Dang ,  Thomas S. Choi ,  Peter Loewenhardt

IPC分类号： H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31138

摘要： A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.

摘要翻译： 提供了在低k电介质层中形成特征的方法。 将低k电介质层放置在衬底上。 将图案化的光致抗蚀剂掩模放置在低k电介质层上。 至少一个特征被蚀刻到低k电介质层中。 在蚀刻至少一个特征之后，在至少一个特征上进行CO调节。 在CO调节之后剥离图案化的光刻胶掩模。

公开(公告)号：US20080102645A1

公开(公告)日：2008-05-01

申请号：US11555017

申请日：2006-10-31

申请人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

发明人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32706 ,  H01L21/76807

摘要： A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising CO2 is introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.

摘要翻译： 包括覆盖电介质特征的抗蚀剂层的衬底在包括天线的衬底处理室以及第一和第二处理电极中被处理。 将包含CO 2 2的工艺气体引入室中。 通过向天线施加源电压并且通过向电极施加具有至少约10MHz的第一频率的第一偏置电压和具有第二频率较小的第二偏置电压来对工艺气体进行通电以形成等离子体 大约4 MHz。 第一偏置电压的功率电平与第二偏置电压的比率足以获得至少约为电介质特征高度的约10％的底层电介质特征的边缘面高度。

公开(公告)号：US08999184B2

公开(公告)日：2015-04-07

申请号：US13566934

申请日：2012-08-03

申请人： Ming-Shu Kuo ,  Siyi Li ,  Yifeng Zhou ,  Ratndeep Srivastava ,  Tae Won Kim ,  Gowri Kamarthy

发明人： Ming-Shu Kuo ,  Siyi Li ,  Yifeng Zhou ,  Ratndeep Srivastava ,  Tae Won Kim ,  Gowri Kamarthy

IPC分类号： B44C1/22 ,  H01J37/32 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/0338 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816

摘要： A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.

摘要翻译： 提供了一种用于在具有多个图案化通孔的图案化有机掩模下方设置的蚀刻层中形成通孔的方法。 通过流动包含H 2的处理气体来处理图案化的有机掩模。 从处理气体形成等离子体。 通过将图案化的通孔暴露于等离子体，图案化的通孔被圆化以形成图案化的圆形通孔。 停止处理气体的流动。 多个图案化的圆形通孔转移到蚀刻层中。

公开(公告)号：US07226852B1

公开(公告)日：2007-06-05

申请号：US10866382

申请日：2004-06-10

申请人： Siyi Li ,  Helen H. Zhu ,  Howard Dang ,  Thomas S. Choi ,  Peter Loewenhardt

发明人： Siyi Li ,  Helen H. Zhu ,  Howard Dang ,  Thomas S. Choi ,  Peter Loewenhardt

IPC分类号： H01L21/44

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31138

摘要： A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.

摘要翻译： 提供了在低k电介质层中形成特征的方法。 将低k电介质层放置在衬底上。 将图案化的光致抗蚀剂掩模放置在低k电介质层上。 至少一个特征被蚀刻到低k电介质层中。 在蚀刻至少一个特征之后，在至少一个特征上进行CO调节。 在CO调节之后剥离图案化的光刻胶掩模。

公开(公告)号：US07790047B2

公开(公告)日：2010-09-07

申请号：US11410786

申请日：2006-04-25

申请人： Zhilin Huang ,  Siyi Li ,  Qingjun Zhou

发明人： Zhilin Huang ,  Siyi Li ,  Qingjun Zhou

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  H01L21/31138

摘要： Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.

摘要翻译： 本文提供了从具有暴露的低k材料的基材中除去掩蔽材料同时最小化对低k材料的暴露表面的损害的方法。 在一个实施例中，用于从衬底去除掩模材料的方法包括提供具有暴露的低k材料和待除去的掩模材料的衬底; 将掩模材料暴露于由还原化学物质形成的第一等离子体第一时间段; 以及将所述掩蔽材料暴露于由氧化化学物质形成的第二等离子体第二时间段内。 这些步骤可以根据需要重复，并且可以以相反的顺序进行。 任选地，可以向氧化化学品中加入至少一种稀释气体。

公开(公告)号：US20080138997A1

公开(公告)日：2008-06-12

申请号：US11608611

申请日：2006-12-08

申请人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

发明人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808

摘要： Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH3 gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising O2 gas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.

摘要翻译： 在本发明中提供了从特征中去除BARC层的方法。 在一个实施例中，该方法包括提供在蚀刻室中具有填充有BARC层的特征的衬底，将包括NH 3气体的第一气体混合物供应到腔室中以蚀刻BARC的第一部分 并且将包含O 2 2气体的第二气体混合物供应到蚀刻室中以蚀刻设置在特征中的BARC层的剩余部分。

公开(公告)号：US07758763B2

公开(公告)日：2010-07-20

申请号：US11555017

申请日：2006-10-31

申请人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

发明人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

IPC分类号： B44C1/22 ,  H01L21/3065

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32706 ,  H01L21/76807

摘要： A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising CO2 is introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.

摘要翻译： 包括覆盖电介质特征的抗蚀剂层的衬底在包括天线的衬底处理室以及第一和第二处理电极中被处理。 将包含CO 2的工艺气体引入室中。 通过向天线施加源电压并且通过向电极施加具有至少约10MHz的第一频率的第一偏置电压和具有第二频率较小的第二偏置电压来对工艺气体进行通电以形成等离子体 大约4 MHz。 第一偏置电压的功率电平与第二偏置电压的比率足以获得至少约为电介质特征高度的约10％的底层电介质特征的边缘面高度。

公开(公告)号：US07718543B2

公开(公告)日：2010-05-18

申请号：US11608611

申请日：2006-12-08

申请人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

发明人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808

摘要： Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH3 gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising O2 gas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.

摘要翻译： 在本发明中提供了从特征中去除BARC层的方法。 在一个实施例中，该方法包括在蚀刻室中提供具有填充有BARC层的特征的衬底，将包含NH 3气体的第一气体混合物供应到腔室中以蚀刻填充该特征的BARC层的第一部分， 将包含O 2气体的第二气体混合物引入到蚀刻室中以蚀刻设置在特征中的BARC层的剩余部分。