公开(公告)号：US20130228852A1

公开(公告)日：2013-09-05

申请号：US13600373

申请日：2012-08-31

申请人： Soichiro KITAZAKI ,  Masaru KIDOH ,  Mitsuru SATO ,  Ryota KATSUMATA ,  Tadashi IGUCHI

发明人： Soichiro KITAZAKI ,  Masaru KIDOH ,  Mitsuru SATO ,  Ryota KATSUMATA ,  Tadashi IGUCHI

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66666 ,  H01L27/11565 ,  H01L27/11582 ,  H01L29/7827

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of insulating isolation sections provided so as to extend in a first direction, isolate the stacked body in a second direction, and have a projection projecting from the stacked body. Each insulating isolation section has a side wall including recessed sections and projected sections repeated along the first direction. The method includes forming a sidewall film on a side wall of the projection of the insulating isolation section, and forming a plurality of first holes surrounded by the sidewall film and isolated by the sidewall film in the first direction, between the plurality of insulating isolation sections. The method includes forming a second hole in the stacked body provided under the first hole by etching with the insulating isolation section and the sidewall film used as a mask.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的方法包括形成多个绝缘隔离部分，其被设置为沿第一方向延伸，使堆叠体沿第二方向隔离，并具有从堆叠体突出的突出部。 每个绝缘隔离部分具有侧壁，该侧壁包括沿着第一方向重复的凹陷部分和突出部分。 该方法包括在绝缘隔离部分的突起的侧壁上形成侧壁膜，并且在多个绝缘隔离部分之间形成由侧壁膜围绕并由第一方向隔离的多个第一孔 。 该方法包括通过用绝缘隔离部分和用作掩模的侧壁膜进行蚀刻，在设置在第一孔下方的层叠体中形成第二孔。

公开(公告)号：US20130075805A1

公开(公告)日：2013-03-28

申请号：US13419984

申请日：2012-03-14

申请人： Mitsuru SATO ,  Megumi ISHIDUKI ,  Masaru KIDOH ,  Atsushi KONNO ,  Yoshihiro AKUTSU ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA

发明人： Mitsuru SATO ,  Megumi ISHIDUKI ,  Masaru KIDOH ,  Atsushi KONNO ,  Yoshihiro AKUTSU ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA

IPC分类号： H01L29/792 ,  H01L21/425

CPC分类号： H01L29/7926 ,  H01L21/265 ,  H01L27/11582 ,  H01L29/0676 ,  H01L29/66833

摘要： According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion communicating with the second portion and penetrating through a second insulating layer; forming a memory film, a gate insulating film, and a channel body; forming a third insulating layer inside the channel body; forming a first embedded portion above a boundary portion inside the third portion; exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion; and embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.

摘要翻译： 根据一个实施例，一种用于制造非易失性半导体存储装置的方法包括： 形成第一和第二堆叠体; 形成穿过所述第一层叠体的通孔，与所述第一部分连通并穿过选择栅极的第二部分，以及与所述第二部分连通并穿透第二绝缘层的第三部分; 形成记忆膜，栅极绝缘膜和通道体; 在通道体内形成第三绝缘层; 在第三部分内部的边界部分上方形成第一嵌入部分; 通过去除第三部分中的第一嵌入部分和第三绝缘层的一部分的一部分来暴露通道体; 以及在所述第三部分内部嵌入包含比所述第一嵌入部分上方的所述第一嵌入部分杂质浓度高的硅的第二嵌入部分。

公开(公告)号：US20080203378A1

公开(公告)日：2008-08-28

申请号：US12037402

申请日：2008-02-26

申请人： Hiroyasu TANAKA ,  Mitsuru SATO ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Masaru KITO ,  Hideaki AOCHI

发明人： Hiroyasu TANAKA ,  Mitsuru SATO ,  Ryota KATSUMATA ,  Masaru KIDOH ,  Masaru KITO ,  Hideaki AOCHI

IPC分类号： H01L47/00 ,  H01L21/00 ,  H01L21/336

CPC分类号： H01L45/144 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/75 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1675

摘要： A phase change memory device including plural memory cells is disclosed. Each of the memory cells includes memory transistors and phase change film portions formed above or below the memory transistors. The phase change film portions correspond to the respective memory transistors respectively. Vias are provided in order to connect each of the memory transistor in parallel to each of the phase change film portions in each of the memory cells. The vias connect the memory cells in series to one another.

摘要翻译： 公开了一种包括多个存储单元的相变存储器件。 每个存储单元包括形成在存储晶体管的上方或下方的存储晶体管和相变膜部分。 相变膜部分别对应于相应的存储晶体管。 提供通孔，以将存储晶体管中的每一个与每个存储单元中的每个相变膜部分并联连接。 通孔将存储单元串联连接。

公开(公告)号：US20080173932A1

公开(公告)日：2008-07-24

申请号：US11970992

申请日：2008-01-08

申请人： Masaru KIDOH ,  Ryota KATSUMATA ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Hiroyasu TANAKA ,  Yasuyuki MATSUOKA ,  Yoshio OZAWA ,  Mitsuru SATO

发明人： Masaru KIDOH ,  Ryota KATSUMATA ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Hideaki AOCHI ,  Hiroyasu TANAKA ,  Yasuyuki MATSUOKA ,  Yoshio OZAWA ,  Mitsuru SATO

IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L21/8247

CPC分类号： H01L29/792 ,  G11C16/0483 ,  H01L27/0688 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first insulating film formed around the columnar semiconductor, a charge storage film formed around the first insulating film, and a second insulating film formed around the charge storage film; an electrode extending two-dimensionally to surround the charge storage insulating film, the electrode having a groove; and a metal silicide formed on a sidewall of the groove.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器，包括：柱状半导体; 电荷存储绝缘膜，包括：围绕所述柱状半导体形成的第一绝缘膜，围绕所述第一绝缘膜形成的电荷存储膜，以及形成在所述电荷存储膜周围的第二绝缘膜; 电极，其二维地延伸以包围电荷存储绝缘膜，所述电极具有凹槽; 以及形成在所述槽的侧壁上的金属硅化物。

公开(公告)号：US20100052042A1

公开(公告)日：2010-03-04

申请号：US12561451

申请日：2009-09-17

申请人： Hiroyasu TANAKA ,  Ryota KATSUMATA ,  Hideaki AOCHI ,  Masaru KIDO ,  Masaru KITO ,  Mitsuru SATO

发明人： Hiroyasu TANAKA ,  Ryota KATSUMATA ,  Hideaki AOCHI ,  Masaru KIDO ,  Masaru KITO ,  Mitsuru SATO

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/792 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7881 ,  H01L29/7926

摘要： The semiconductor memory device of the present invention includes a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, the memory strings having a column shaped semiconductor, a first insulation film formed around the column shaped semiconductor, a charge accumulation layer formed around the first insulation film, a second insulation film formed around the charge accumulation film and a plurality of electrodes formed around the second insulation film, a bit line connected to one end of the memory strings via a plurality of selection transistors, and a conducting layer extending in two dimensions and in which the plurality of electrodes of the memory strings and the plurality of electrodes of different memory strings are shared respectively, wherein each end part of the conducting layer is formed in step shapes in a direction parallel with the bit line.

摘要翻译： 本发明的半导体存储器件包括具有串联连接的多个电可再编程存储器单元的多个存储器串，具有列形半导体的存储器串，形成在柱状半导体周围的第一绝缘膜，电荷累积层 形成在第一绝缘膜周围，形成在电荷累积膜周围的第二绝缘膜和围绕第二绝缘膜形成的多个电极，经由多个选择晶体管连接到存储器串的一端的位线，以及导电 分别在存储器串的多个电极和不同的存储器串的多个电极中分别共享，其中导电层的每个端部在平行于位线的方向上形成为台阶形状 。

公开(公告)号：US20110037046A1

公开(公告)日：2011-02-17

申请号：US12834255

申请日：2010-07-12

申请人： Mitsuru SATO ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Noriko Bota

发明人： Mitsuru SATO ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Noriko Bota

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/124 ,  H01L45/146 ,  H01L45/1616

摘要： According to one embodiment, a resistance-change memory includes a laminated structure in which a lower electrode, an insulating film and an upper electrode are stacked, and a resistance-change film provided on a side surface of the laminated structure, and configured to store data in accordance with an electric resistance change.

摘要翻译： 根据一个实施例，电阻变化存储器包括堆叠下电极，绝缘膜和上电极的层压结构，以及设置在层压结构的侧表面上的电阻变化膜， 数据根据电阻变化。

公开(公告)号：US20100304157A1

公开(公告)日：2010-12-02

申请号：US12779249

申请日：2010-05-13

申请人： Mitsuru SATO ,  Takatoshi YAMAMOTO ,  Nobuhiro NAITO ,  Minehiro IMAMURA

发明人： Mitsuru SATO ,  Takatoshi YAMAMOTO ,  Nobuhiro NAITO ,  Minehiro IMAMURA

IPC分类号： B32B27/06 ,  B32B37/02 ,  B32B9/04

CPC分类号： C09J5/02 ,  C09J2483/00 ,  Y10T156/10 ,  Y10T428/31663

摘要： A bonding method includes: forming a liquid coating by supplying a polyester-modified silicone material-containing liquid material onto at least one of a first base material and a second base material prepared beforehand to be bonded to each other via a bonding film, the polyester-modified silicone material being a product of dehydrocondensation reaction between a polyester resin obtained by esterification reaction of trimethylolpropane with terephthalic acid and a silicone material that has a branched polyorganosiloxane backbone having a unit structure represented by chemical formula (1) below at a branched portion, a unit structure represented by at least one of chemical formulae (2) and (3) below at a linking portion, and a unit structure represented by at least one of chemical formulae (4) and (5) below at a terminal portion, wherein R1 each independently represents a methyl group or a phenyl group, and X represents a siloxane residue; drying and/or curing the liquid coating to obtain the bonding film on at least one of the first base material and the second base material; imparting energy to the bonding film to develop adhesion near a surface of the bonding film; and contacting the first base material and the second base material via the bonding film developing adhesion, so as to obtain a bonded structure in which the first base material and the second base material are bonded to each other via the bonding film.

摘要翻译： 粘合方法包括：通过将预先通过接合膜相互粘合的第一基材和第二基材中的至少一种提供含有聚酯改性的含硅材料的液体材料形成液体涂料，聚酯 改性的硅氧烷材料是通过三羟甲基丙烷与对苯二甲酸的酯化反应获得的聚酯树脂与具有由下述化学式（1）表示的单元结构的支化聚有机硅氧烷骨架的分支部分的硅氧烷材料之间的脱氢反应的产物， 在连接部分由下面的化学式（2）和（3）中的至少一个表示的单元结构，以及在末端部分由下面的化学式（4）和（5）中的至少一个表示的单元结构，其中 R1各自独立地表示甲基或苯基，X表示硅氧烷残基; 干燥和/或固化所述液体涂层，以在所述第一基材和所述第二基材中的至少一个上获得所述接合膜; 赋予所述接合膜以在所述接合膜的表面附近形成附着力; 并通过接合膜显影粘合使第一基材和第二基材接触，从而获得通过接合膜将第一基材和第二基材彼此接合的接合结构。

公开(公告)号：US20100092788A1

公开(公告)日：2010-04-15

申请号：US12577266

申请日：2009-10-12

申请人： Nobuhiro NAITO ,  Mitsuru SATO ,  Takatoshi YAMAMOTO ,  Minehiro IMAMURA

发明人： Nobuhiro NAITO ,  Mitsuru SATO ,  Takatoshi YAMAMOTO ,  Minehiro IMAMURA

IPC分类号： B32B27/00 ,  B32B37/06

CPC分类号： B41J2/161 ,  B41J2/1623 ,  Y10T428/31663

摘要： A bonding method includes: a) applying a liquid material containing a silicone material to at least one of the first base member and the second base member so as to form a liquid film on the at least one of the base members; b) drying the liquid film so as to obtain the bonding film on the at least one of the first base member and the second base member; c) bringing plasma into contact with the bonding film so as to develop adhesiveness around a surface of the bonding film; and d) bringing the first base member and the second base member into contact with each other in a manner to interpose the bonding film on which adhesiveness is developed therebetween so as to obtain a bonded body in which the first base member and the second base member are bonded to each other with the bonding film interposed therebetween.

摘要翻译： 粘合方法包括：a）将含有硅酮材料的液体材料施加到第一基底构件和第二基底构件中的至少一个，以在至少一个基底构件上形成液体膜; b）干燥所述液膜以在所述第一基底和所述第二基底构件中的至少一个上获得接合膜; c）使等离子体与接合膜接触，以便在接合膜的表面附近产生粘附性; 以及d）使所述第一基底构件和所述第二基底构件彼此接触，以便在其间形成有粘合性的接合薄膜的间隔，从而获得其中所述第一基底构件和所述第二基底构件 彼此接合，并且其间插入接合膜。

公开(公告)号：US20090317617A1

公开(公告)日：2009-12-24

申请号：US12484316

申请日：2009-06-15

申请人： Mitsuru SATO ,  Takatoshi YAMAMOTO

发明人： Mitsuru SATO ,  Takatoshi YAMAMOTO

IPC分类号： C09J7/02 ,  B32B37/00

CPC分类号： H05K3/321 ,  B32B37/12 ,  B32B2309/02 ,  B32B2310/0472 ,  B32B2310/0831 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1643 ,  B41J2/1645 ,  B41J2/1646 ,  C09J7/20 ,  H05K3/4015 ,  H05K2203/1105 ,  H05K2203/121 ,  Y10T428/28 ,  Y10T428/2804

摘要： A bonding film-formed base member includes a base member and a bonding film formed by supplying a liquid material containing a metal complex on a surface of the base member and then drying and burning the liquid material. The bonding film includes a metal atom and a leaving group made of an organic component. In the bonding-film formed base member, energy is applied to at least a partial region of a surface of the bonding film to eliminate the leaving group present near the surface of the bonding film from the bonding film so as to allow the at least a partial region of the surface to have adhesion to an object intended to be bonded to the bonding film-formed base member.

摘要翻译： 接合膜形成的基底构件包括基底构件和通过在基底构件的表面上供给含有金属络合物的液体材料，然后干燥和燃烧液体材料而形成的接合膜。 接合膜包括金属原子和由有机组分制成的离去基团。 在接合膜形成的基底部件中，能量被施加到接合膜的表面的至少一部分区域，以消除接合膜表面附近存在的离开基团，从而允许至少一个 表面的局部区域具有与要接合到接合膜形成的基底构件的物体的粘合性。

公开(公告)号：US20120068144A1

公开(公告)日：2012-03-22

申请号：US13097375

申请日：2011-04-29

申请人： Ryota FUJITSUKA ,  Masahiro KIYOTOSHI ,  Katsuyuki SEKINE ,  Mitsuru SATO

发明人： Ryota FUJITSUKA ,  Masahiro KIYOTOSHI ,  Katsuyuki SEKINE ,  Mitsuru SATO

IPC分类号： H01L45/00

CPC分类号： H01L45/146 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/72 ,  H01L45/1233

摘要： According to one embodiment, there are provided a first electrode, a second electrode, first and second variable-resistance layers that are arranged between the first electrode and the second electrode, and at least one non variable-resistance layer that is arranged so that positions of the first and second variable-resistance layers between the first electrode and the second electrode are symmetrical to each other.

摘要翻译： 根据一个实施例，提供了布置在第一电极和第二电极之间的第一电极，第二电极，第一和第二可变电阻层，以及至少一个非可变电阻层，其被布置成使得位置 在第一电极和第二电极之间的第一和第二可变电阻层彼此对称。