公开(公告)号：US20150167161A1

公开(公告)日：2015-06-18

申请号：US14401352

申请日：2013-05-24

Applicant: Soitec

Inventor： Claudio Canizares ,  Dan Gura ,  Ronald Thomas Bertram, JR.

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/45514 ,  C23C16/45574 ,  C30B25/14

Abstract: A gas injector includes a base plate, a middle plate, and a top plate. The base plate, middle plate, and top plate are configured to flow a purge gas between the base plate and the middle plate and to flow a precursor gas between the middle plate and the top plate. Another gas injector includes a precursor gas inlet, a lateral precursor gas flow channel, and a plurality of precursor gas flow channels. The plurality of precursor gas flow channels extend from the at least one lateral precursor gas flow channel to an outlet of the gas injector. Methods of forming a material on a substrate include flowing a precursor between a middle plate and a top plate of a gas injector and flowing a purge gas between a base plate and the middle plate of the gas injector.

Abstract translation: 气体喷射器包括基板，中间板和顶板。 基板，中间板和顶板构造成在基板和中间板之间流动净化气体，并使前体气体在中间板和顶板之间流动。 另一气体喷射器包括前体气体入口，侧向前体气体流动通道和多个前体气体流动通道。 多个前体气体流动通道从至少一个侧向前体气体流动通道延伸到气体注入器的出口。 在基板上形成材料的方法包括使前体在气体注射器的中间板和顶板之间流动，并且将吹扫气体在基板和气体注入器的中间板之间流动。

公开(公告)号：US20130280892A1

公开(公告)日：2013-10-24

申请号：US13919539

申请日：2013-06-17

Applicant: Soitec

Inventor： Ronald Thomas Bertram, JR.

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/301 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/452 ,  C30B25/14 ,  C30B29/403

Abstract: Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.

Abstract translation: 在衬底上沉积材料的方法包括从热化气体注入器内的源气体形成前体气体和副产物。 副产物可以与液体试剂反应以形成额外的前体气体，其可以从热化气体注入器注入反应室。 用于将气体注入沉积系统的反应室的热化气体注入器可以包括入口，热化管道，配置成将液体试剂保持在其中的液体容器和出口。 通道可以从入口，通过热化管道延伸到液体容器内的内部空间，以及从液体容器内的内部空间延伸到出口。 热化导管的长度可以大于入口和液体容器之间的最短距离。 沉积系统可以包括一个或多个这样的热化气体注入器。

公开(公告)号：US20130137247A1

公开(公告)日：2013-05-30

申请号：US13751558

申请日：2013-01-28

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/303 ,  C23C16/448 ,  C30B25/105

Abstract: The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract translation: 本发明涉及半导体处理领域，并且提供了通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的方法。 在优选的实施方案中，该方法提供热传递结构及其在CVD反应器内的布置，以便促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明提供放射吸收表面，其被放置以拦截来自加热灯的辐射并将其转移到流动的工艺气体。

公开(公告)号：US20160145767A1

公开(公告)日：2016-05-26

申请号：US15013448

申请日：2016-02-02

Applicant: Soitec

Inventor： Ronald Thomas Bertram, JR. ,  Christiaan J. Werkhoven ,  Chantal Arena ,  Ed Lindow

IPC: C30B25/14 ,  H01L21/02 ,  C30B29/40

CPC classification number: C30B25/14 ,  C23C16/303 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/54 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T137/0402

Abstract: Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.

公开(公告)号：US20130199441A1

公开(公告)日：2013-08-08

申请号：US13828585

申请日：2013-03-14

Applicant: SOITEC

Inventor： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Christiaan Werkhoven

IPC: C30B25/14

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.

Abstract translation: 本发明提供了用于CVD（化学气相沉积）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。 所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。 所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。 本发明还提供了使用所提供的热化气体喷射器的CVD系统。 本发明特别适用于大量制造GaN衬底。