公开(公告)号：US20070269975A1

公开(公告)日：2007-11-22

申请号：US11436950

申请日：2006-05-18

申请人： Stephen E. Savas ,  Li Hou ,  Songlin Xu

发明人： Stephen E. Savas ,  Li Hou ,  Songlin Xu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76829

摘要： In device fabrication, a photoresist layer is formed on an insulation layer, above a stop layer that is supported directly on an active device structure. Holes are needed through the insulation layer to reach a contact arrangement, defined by the active device structure in which each contact is covered by the stop layer and some of the contacts include a silicide material. A plurality of contact openings are etched through the insulation layer to expose the stop layer above each contact, which may produce etch related residue. The photoresist and residues are then stripped using a first plasma that contains oxygen, without removing the stop layer such that the stop layer protects the silicide material from the oxygen. Thereafter, etching is performed to remove the stop layer from the contacts using a second plasma that is oxygen free and which contains hydrogen.

摘要翻译： 在器件制造中，光致抗蚀剂层形成在绝缘层上方，直接支撑在有源器件结构上的停止层之上。 通过绝缘层需要孔以达到由有源器件结构限定的接触装置，其中每个触点被阻挡层覆盖，并且一些触点包括硅化物材料。 通过绝缘层蚀刻多个接触开口以暴露每个接触件上方的停止层，这可能产生与蚀刻有关的残留物。 然后使用含有氧的第一等离子体剥离光致抗蚀剂和残余物，而不去除停止层，使得停止层保护硅化物材料免受氧气的影响。 此后，使用无氧的含有氢的第二等离子体来进行蚀刻以从触点去除停止层。

公开(公告)号：US07561258B2

公开(公告)日：2009-07-14

申请号：US11749611

申请日：2007-05-16

申请人： Songlin Xu ,  Li Hou ,  Stephen Hyatt

发明人： Songlin Xu ,  Li Hou ,  Stephen Hyatt

IPC分类号： H01L21/66 ,  G01J3/443

CPC分类号： H01L22/26

摘要： An exemplary embodiment providing one or more improvements includes a wafer tilt detection apparatus for use with a wafer processing or manufacturing device that applies a process to the wafer and which utilizes an endpoint signal for determining control of the process applied to the wafer. The wafer tilt apparatus uses the endpoint signal in establishing when the wafer was in a tilted orientation during processing.

摘要翻译： 提供一个或多个改进的示例性实施例包括与晶片处理或制造装置一起使用的晶片倾斜检测装置，该晶片处理或制造装置向晶片施加过程，并且利用端点信号来确定施加到晶片的工艺的控制。 晶片倾斜装置在处理期间当晶片处于倾斜取向时，使用端点信号建立。

公开(公告)号：US20070269910A1

公开(公告)日：2007-11-22

申请号：US11749611

申请日：2007-05-16

申请人： Songlin Xu ,  Li Hou ,  Stephen Hyatt

发明人： Songlin Xu ,  Li Hou ,  Stephen Hyatt

IPC分类号： H01L21/66

CPC分类号： H01L22/26

摘要： An exemplary embodiment providing one or more improvements includes a wafer tilt detection apparatus for use with a wafer processing or manufacturing device that applies a process to the wafer and which utilizes an endpoint signal for determining control of the process applied to the wafer. The wafer tilt apparatus uses the endpoint signal in establishing when the wafer was in a tilted orientation during processing.

摘要翻译： 提供一个或多个改进的示例性实施例包括与晶片处理或制造装置一起使用的晶片倾斜检测装置，该晶片处理或制造装置向晶片施加过程，并且利用端点信号来确定施加到晶片的工艺的控制。 晶片倾斜装置在处理期间当晶片处于倾斜取向时，使用端点信号建立。

公开(公告)号：US20060228490A1

公开(公告)日：2006-10-12

申请号：US11101305

申请日：2005-04-07

申请人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Choi ,  John White

发明人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Choi ,  John White

IPC分类号： C23F1/00 ,  B01J19/08 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23F4/00 ,  H01J37/32449

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.

摘要翻译： 提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。 实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板 ，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。 挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

公开(公告)号：US06942753B2

公开(公告)日：2005-09-13

申请号：US10417592

申请日：2003-04-16

申请人： Soo Young Choi ,  Quanyuan Shang ,  Robert I. Greene ,  Li Hou

发明人： Soo Young Choi ,  Quanyuan Shang ,  Robert I. Greene ,  Li Hou

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/00 ,  C23C16/452 ,  C23F1/00 ,  H01L21/00

CPC分类号： C23C16/45565 ,  C23C16/5096

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having a plurality of gas passages passing between an upstream side and a downstream side of the diffuser plate. At least one of the gas passages includes a first hole and a second hole coupled by an orifice hole. The first hole extends from the upstream side of the diffuser plate while the second hole extends from the downstream side. The orifice hole has a diameter less than the respective diameters of the first and second holes.

摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，气体分配板包括具有通过扩散板的上游侧和下游侧之间的多个气体通道的扩散板。 至少一个气体通道包括第一孔和通过孔口联接的第二孔。 第一孔从扩散板的上游侧延伸，而第二孔从下游侧延伸。 孔口的直径小于第一孔和第二孔的直径。

公开(公告)号：US20080178807A1

公开(公告)日：2008-07-31

申请号：US12099112

申请日：2008-04-07

申请人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Young Choi ,  John M. White

发明人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Young Choi ,  John M. White

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23F4/00 ,  H01J37/32449

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.

摘要翻译： 提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。 实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板 ，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。 挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

公开(公告)号：US20050251990A1

公开(公告)日：2005-11-17

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

发明人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US09200368B2

公开(公告)日：2015-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20110290183A1

公开(公告)日：2011-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20050255244A1

公开(公告)日：2005-11-17

申请号：US11188375

申请日：2005-07-25

申请人： Li Hou ,  Quanyuan Shang ,  Robert Greene

发明人： Li Hou ,  Quanyuan Shang ,  Robert Greene

IPC分类号： H01L21/687 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/68742 ,  H01L21/68778

摘要： A method for lifting a substrate from a susceptor. A plurality of lift pins is configured so that they support the substrate without contacting a central portion of the substrate. The processed substrate has a first dimension that is at least 500 millimeters and a second dimension that is at least 500 millimeters. Each lift pin in the plurality of lift pins is configured so that it supports the substrate from a point that is at least 120 millimeters from a center of the substrate. The plurality of lift pins is configured so that each side of the susceptor is supported by at least three lift pins. In some embodiments, a support member overlies at least a subset of the plurality of lift pins.

摘要翻译： 一种用于从基座提起基板的方法。 多个提升销构造成使得它们支撑基板而不接触基板的中心部分。 经处理的基底具有至少500毫米的第一尺寸和至少500毫米的第二尺寸。 多个提升销中的每个提升销被构造成使得其从距衬底的中心至少120毫米的点支撑衬底。 多个提升销构造成使得基座的每侧由至少三个提升销支撑。 在一些实施例中，支撑构件覆盖多个提升销的至少一个子集。