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    High-performance LED fabrication
    1.
    发明授权
    High-performance LED fabrication 有权
    高性能LED制造

    公开(公告)号：US09583678B2

    公开(公告)日：2017-02-28

    申请号：US14615315

    申请日：2015-02-05

    Applicant: SORAA, INC.

    Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

    IPC: H05B37/02 ,  H01L29/22 ,  H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/40 ,  H01L33/60 ,  H01L33/16 ,  H01L33/20

    CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

    Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    Abstract translation: 公开了高性能发光二极管及其装置和方法实施例。 发光二极管器件发射波长为390nm至470nm，波长为405nm至430nm。 发光二极管器件的特征在于在器件的横向尺寸和器件的垂直尺寸之间具有几何关系（例如，纵横比），使得几何纵横比形成体积发光二极管，其传送基本平坦的电流密度 跨越设备（例如，跨过活动区域的横向尺寸测量）。 发光二极管器件的特征在于，有源区中的电流密度大于约175A / cm 2。

    High-performance LED fabrication
    2.
    发明授权
    High-performance LED fabrication 有权

    公开(公告)号：US10693041B2

    公开(公告)日：2020-06-23

    申请号：US16168311

    申请日：2018-10-23

    Applicant: SORAA, INC.

    Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

    IPC: H01L33/02 ,  H01L33/32 ,  H01L33/60 ,  F21V29/70 ,  H01L33/16 ,  H01L33/20 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62

    Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    Contacts for an n-type gallium and nitrogen substrate for optical devices
    3.
    发明授权
    Contacts for an n-type gallium and nitrogen substrate for optical devices 有权
    用于光学器件的n型镓和氮衬底的触点

    公开(公告)号：US08994033B2

    公开(公告)日：2015-03-31

    申请号：US13937338

    申请日：2013-07-09

    Applicant: Soraa, Inc.

    Inventor： Michael J. Cich ,  Kenneth John Thomson

    IPC: H01L29/15 ,  H01L33/32 ,  H01L33/22

    CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0008 ,  H01L2933/0016 ,  H01L2933/0033

    Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

    Abstract translation: 一种制造LED器件的方法。 该方法包括提供包括背面和前侧表面的含镓和氮的衬底构件（例如，GaN）。 该方法包括使背面表面进行抛光处理，使得背面由表面粗糙度表征，使背面表面进行各向异性蚀刻处理，使各种晶面曝光，形成多个在空间上分布的金字塔状结构 非周期性地在后侧表面上处理包括多个金字塔状结构的背面，到等离子体物质，并对背面进行表面处理。 该方法还包括形成包含覆盖在经表面处理的背面的铝轴承种类或钛轴承种类的接触材料以形成具有接触材料的多个LED器件。

    High-performance LED fabrication
    4.
    发明授权
    High-performance LED fabrication 有权

    公开(公告)号：US10115865B2

    公开(公告)日：2018-10-30

    申请号：US15785950

    申请日：2017-10-17

    Applicant: SORAA, INC.

    Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

    IPC: H01L33/32 ,  H01L33/48 ,  H01L33/62 ,  H01L33/60 ,  H01L33/40 ,  H01L33/20 ,  H01L33/16

    Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    CONTACTS FOR AN N-TYPE GALLIUM AND NITROGEN SUBSTRATE FOR OPTICAL DEVICES
    7.
    发明申请
    CONTACTS FOR AN N-TYPE GALLIUM AND NITROGEN SUBSTRATE FOR OPTICAL DEVICES 有权
    用于光学器件的N型镀层和氮基底的接触

    公开(公告)号：US20150171276A1

    公开(公告)日：2015-06-18

    申请号：US14629049

    申请日：2015-02-23

    Applicant: SORAA, INC.

    Inventor： Michael J. Cich ,  Kenneth Jonh Thomson

    IPC: H01L33/40 ,  H01L33/00

    CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0008 ,  H01L2933/0016 ,  H01L2933/0033

    Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

    Abstract translation: 一种制造LED器件的方法。 该方法包括提供包括背面和前侧表面的含镓和氮的衬底构件（例如，GaN）。 该方法包括使背面表面进行抛光处理，使得背面由表面粗糙度表征，使背面表面进行各向异性蚀刻处理，使各种晶面曝光，形成多个在空间上分布的金字塔状结构 非周期性地在后侧表面上处理包括多个金字塔状结构的背面，到等离子体物质，并对背面进行表面处理。 该方法还包括形成包含覆盖在经表面处理的背面的铝轴承种类或钛轴承种类的接触材料以形成具有接触材料的多个LED器件。

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