公开(公告)号：US06995030B2

公开(公告)日：2006-02-07

申请号：US10346605

申请日：2003-01-17

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegletter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegletter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US20060145164A1

公开(公告)日：2006-07-06

申请号：US11292389

申请日：2005-11-30

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/08 ,  H01L33/20 ,  H01L33/382 ,  H01L33/46

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US07547921B2

公开(公告)日：2009-06-16

申请号：US11292389

申请日：2005-11-30

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L27/15

CPC分类号： H01L33/405 ,  H01L33/08 ,  H01L33/20 ,  H01L33/382 ,  H01L33/46

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US08017953B2

公开(公告)日：2011-09-13

申请号：US12158474

申请日：2006-11-21

申请人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

发明人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01L33/42

摘要： An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

摘要翻译： 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO（透明导电氧化物）。 在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

公开(公告)号：US20090127580A1

公开(公告)日：2009-05-21

申请号：US12158474

申请日：2006-11-21

申请人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

发明人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

IPC分类号： H01L33/00 ,  H01L21/3205

CPC分类号： H01L33/145 ,  H01L33/42

摘要： An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

摘要翻译： 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO（透明导电氧化物）。 在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

公开(公告)号：US07109527B2

公开(公告)日：2006-09-19

申请号：US10344308

申请日：2001-08-08

申请人： Stefan Illek ,  Andreas Plössl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

发明人： Stefan Illek ,  Andreas Plössl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least one cavity via which a plurality of mesas is fashioned at the boundary between carrier substrate and thin-film layer is fashioned in the active thin-film layer proceeding from the carrier substrate.

摘要翻译： 半导体芯片，特别是辐射发射半导体芯片，包括其中形成有光子发射区的有源薄膜层，并且用于薄膜层的载体衬底被布置在薄膜层的一侧 面向远离发射方向并连接到它。 在载体衬底和活性薄膜层之间形成至少一个通过其在载体衬底和薄膜层之间的边界处形成多个台面的空腔。

公开(公告)号：US20060180820A1

公开(公告)日：2006-08-17

申请号：US11403006

申请日：2006-04-12

申请人： Stefan Illek ,  Andreas Plossl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

发明人： Stefan Illek ,  Andreas Plossl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least one cavity via which a plurality of mesas is fashioned at the boundary between carrier substrate and thin-film layer is fashioned in the active thin-film layer proceeding from the carrier substrate.

摘要翻译： 半导体芯片，特别是辐射发射半导体芯片，包括其中形成有光子发射区的有源薄膜层，并且用于薄膜层的载体衬底被布置在薄膜层的一侧 面向远离发射方向并连接到它。 在载体衬底和活性薄膜层之间形成至少一个通过其在载体衬底和薄膜层之间的边界处形成多个台面的空腔。

公开(公告)号：US07283577B2

公开(公告)日：2007-10-16

申请号：US11291692

申请日：2005-11-30

申请人： Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

发明人： Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

IPC分类号： H01S3/08

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/405 ,  H01L33/465 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18375 ,  H01S5/34326 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.

摘要翻译： 具有半导体层序列（1）的辐射发射半导体部件，所述半导体层序列（1）具有用于发射辐射的活性区域（2）和布置在所述有源区域下游的第一反射镜。 第一镜包括金属层（4）和由辐射透射和导电材料制成的中间层（3），所述中间层布置在金属层（4）的面向活性区的一侧。 辐射发射半导体部件被提供用于与光学谐振器一起操作，并且用于产生主要为非相干辐射的RCLED或辐射发射半导体部件用于与外部光学谐振器一起操作并且用于产生主要相干辐射作为VECSEL。

公开(公告)号：US20050017252A1

公开(公告)日：2005-01-27

申请号：US10912386

申请日：2004-08-02

申请人： Klaus Streubel ,  Ralph Wirth

发明人： Klaus Streubel ,  Ralph Wirth

IPC分类号： H01L23/367 ,  H01L33/20 ,  H01L33/62 ,  H01L33/64 ,  H01L27/15

CPC分类号： H01L33/642 ,  H01L23/3672 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/04026 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/32112 ,  H01L2224/32221 ,  H01L2224/83851 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10158 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/01031 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting semiconductor component has a semiconductor element containing an active layer, electrical contacts for impressing a current into the active layer (heat being generated at the active layer and at the electrical contacts during operation), and a carrier with a large thermal capacity for absorbing the heat generated during operation. The rear side of the semiconductor element is (electrically and/or thermally) connected to the carrier by a adhesive. Recesses, which accommodate a part of the adhesive when the semiconductor element is connected to the carrier, are provided in the rear side of the semiconductor element.

公开(公告)号：US08283684B2

公开(公告)日：2012-10-09

申请号：US12443155

申请日：2007-09-19

申请人： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

发明人： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/24 ,  H01L25/0756 ,  H01L25/167 ,  H01L33/08 ,  H01L2224/32145 ,  H01L2924/0002 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00

摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

摘要翻译： LED半导体体包括多个至少两个辐射生成有源层。 每个有源层具有正向电压，其中有源层的数量适应于工作电压，使得跨过与有源层串联连接的串联电阻器上的电压与电压下降最多相同的大小 跨越LED半导体体。 本发明还描述了LED半导体本体的各种用途。