-
1.发明申请PACKAGE BOARD, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE USING THE SAME 审中-公开包装板及其制造方法和使用其的半导体封装公开(公告)号：US20150195905A1
公开(公告)日：2015-07-09
申请号：US14457109
申请日：2014-08-11
发明人： Myung Sam KANG , Seung Eun LEE , Seung Yeop KOOK , Ki Jung SUNG , Ju Hee PARK , Je Gwang YOO , Jin Seon PARK
CPC分类号： H05K3/4644 , H01G4/33 , H01L21/6835 , H01L23/145 , H01L23/3121 , H01L23/49822 , H01L23/49827 , H01L23/49894 , H01L23/642 , H01L2221/68345 , H01L2224/32112 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83385 , H01L2924/15313 , H01L2924/181 , H05K1/115 , H05K1/162 , H05K3/284 , H05K2201/10159 , H05K2203/1453 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： There are provided a package board, a method of manufacturing the same, and a semiconductor package using the same. According to an exemplary embodiment of the present disclosure, the package substrate may include: an insulating layer; a circuit layer formed on and beneath the insulating layer; a capacitor formed in the insulating layer and including an upper electrode, a lower electrode, and a dielectric layer formed between the upper electrode and the lower electrode; and a via connecting the circuit layer to the upper electrode and the lower electrode.
摘要翻译： 提供了一种封装板，其制造方法和使用该封装板的半导体封装。 根据本公开的示例性实施例，封装基板可以包括：绝缘层; 在绝缘层上形成的电路层; 形成在所述绝缘层中并且包括形成在所述上电极和所述下电极之间的上电极，下电极和电介质层的电容器; 以及将电路层连接到上电极和下电极的通孔。
-
公开(公告)号：US09859180B2
公开(公告)日：2018-01-02
申请号：US15174450
申请日：2016-06-06
发明人： Yu-Te Hsieh
IPC分类号： H01L23/00 , H01L23/10 , H01L23/48 , H01L23/498 , H01L23/31 , H01L21/302
CPC分类号： H01L23/10 , H01L21/302 , H01L23/3114 , H01L23/481 , H01L23/49805 , H01L23/525 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/94 , H01L29/0657 , H01L2224/29021 , H01L2224/29022 , H01L2224/29034 , H01L2224/29099 , H01L2224/32013 , H01L2224/32111 , H01L2224/32112 , H01L2224/32237 , H01L2224/32238 , H01L2224/325 , H01L2224/83193 , H01L2224/83856 , H01L2924/00014 , H01L2924/16235 , H01L2924/1632 , H01L2924/1659 , H01L2924/16788 , H01L2224/13099
摘要： Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.
-
公开(公告)号：US20180082913A1
公开(公告)日：2018-03-22
申请号：US15823744
申请日：2017-11-28
发明人： Yu-Te HSIEH
IPC分类号： H01L23/10 , H01L23/00 , H01L21/302 , H01L23/31 , H01L23/498 , H01L23/48
CPC分类号： H01L23/10 , H01L21/302 , H01L23/3114 , H01L23/481 , H01L23/49805 , H01L23/525 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/94 , H01L29/0657 , H01L2224/29021 , H01L2224/29022 , H01L2224/29034 , H01L2224/29099 , H01L2224/32013 , H01L2224/32111 , H01L2224/32112 , H01L2224/32237 , H01L2224/32238 , H01L2224/325 , H01L2224/83193 , H01L2224/83856 , H01L2924/00014 , H01L2924/16235 , H01L2924/1632 , H01L2924/1659 , H01L2924/16788 , H01L2224/13099
摘要： Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.
-
公开(公告)号：US06900476B2
公开(公告)日：2005-05-31
申请号：US10912386
申请日：2004-08-02
申请人： Klaus Steubel , Ralph Wirth
发明人： Klaus Steubel , Ralph Wirth
IPC分类号： H01L23/367 , H01L33/20 , H01L33/62 , H01L33/64 , H01L33/00
CPC分类号： H01L33/642 , H01L23/3672 , H01L24/05 , H01L24/32 , H01L24/83 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2224/04026 , H01L2224/05554 , H01L2224/05557 , H01L2224/2919 , H01L2224/32013 , H01L2224/32112 , H01L2224/32221 , H01L2224/83851 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01021 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10158 , H01L2924/10329 , H01L2924/12041 , H01L2924/01031 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting semiconductor component has a semiconductor element containing an active layer, electrical contacts for impressing a current into the active layer (heat being generated at the active layer and at the electrical contacts during operation), and a carrier with a large thermal capacity for absorbing the heat generated during operation. The rear side of the semiconductor element is (electrically and/or thermally) connected to the carrier by a adhesive. Recesses, which accommodate a part of the adhesive when the semiconductor element is connected to the carrier, are provided in the rear side of the semiconductor element.
摘要翻译： 发光半导体元件具有含有有源层的半导体元件，用于将电流施加到有源层（在有源层产生的热量和在操作期间的电触点处产生的热量）的电触点和具有大热容量的载体 用于吸收在操作期间产生的热量。 半导体元件的后侧（电和/或热）通过粘合剂连接到载体。 当半导体元件连接到载体时，容纳粘合剂的一部分的凹部设置在半导体元件的后侧。
-
公开(公告)号：US20170236761A1
公开(公告)日：2017-08-17
申请号：US15174450
申请日：2016-06-06
发明人： Yu-Te HSIEH
IPC分类号： H01L23/10 , H01L23/00 , H01L23/31 , H01L21/302 , H01L23/48 , H01L23/498
CPC分类号： H01L23/10 , H01L21/302 , H01L23/3114 , H01L23/481 , H01L23/49805 , H01L23/525 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/94 , H01L29/0657 , H01L2224/29021 , H01L2224/29022 , H01L2224/29034 , H01L2224/29099 , H01L2224/32013 , H01L2224/32111 , H01L2224/32112 , H01L2224/32237 , H01L2224/32238 , H01L2224/325 , H01L2224/83193 , H01L2224/83856 , H01L2924/00014 , H01L2924/16235 , H01L2924/1632 , H01L2924/1659 , H01L2924/16788 , H01L2224/13099
摘要： Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.
-
公开(公告)号：US08592875B2
公开(公告)日：2013-11-26
申请号：US13683324
申请日：2012-11-21
申请人： Micronas GmbH
IPC分类号： G01N27/403
CPC分类号： H01L29/66 , G01N27/4143 , G01N27/4148 , H01L23/3171 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L2224/0401 , H01L2224/04026 , H01L2224/05017 , H01L2224/05138 , H01L2224/05557 , H01L2224/05558 , H01L2224/05564 , H01L2224/05571 , H01L2224/05572 , H01L2224/05578 , H01L2224/05582 , H01L2224/05638 , H01L2224/05684 , H01L2224/05686 , H01L2224/05687 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/16058 , H01L2224/16112 , H01L2224/1613 , H01L2224/16145 , H01L2224/17505 , H01L2224/17517 , H01L2224/26145 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32058 , H01L2224/32112 , H01L2224/3213 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/33505 , H01L2224/33517 , H01L2224/48247 , H01L2224/73207 , H01L2224/73215 , H01L2224/73265 , H01L2224/8185 , H01L2224/8385 , H01L2224/83851 , H01L2924/00014 , H01L2924/10155 , H01L2924/01014 , H01L2924/0476 , H01L2924/01074 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.
摘要翻译： 提供一种半导体气体传感器，其包括在其表面上形成有钝化层的半导体本体。 气体敏感控制电极通过间隙与沟道区域分离，或者控制电极被布置为具有间隙的电容器的第一板，并且电容器的第二板连接到作为 电容控制场效应晶体管。 控制电极连接到参考电压。 支撑区域设置有第一支撑结构和第二支撑结构。 在半导体本体的表面上设置接触区域。 第一接触区域具有摩擦连接并且与控制电极的电连接和第二接触区域至少与控制电极的摩擦连接。
-
公开(公告)号：US20130126947A1
公开(公告)日：2013-05-23
申请号：US13683324
申请日：2012-11-21
申请人： Micronas GmbH
IPC分类号： H01L29/66
CPC分类号： H01L29/66 , G01N27/4143 , G01N27/4148 , H01L23/3171 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L2224/0401 , H01L2224/04026 , H01L2224/05017 , H01L2224/05138 , H01L2224/05557 , H01L2224/05558 , H01L2224/05564 , H01L2224/05571 , H01L2224/05572 , H01L2224/05578 , H01L2224/05582 , H01L2224/05638 , H01L2224/05684 , H01L2224/05686 , H01L2224/05687 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/16058 , H01L2224/16112 , H01L2224/1613 , H01L2224/16145 , H01L2224/17505 , H01L2224/17517 , H01L2224/26145 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32058 , H01L2224/32112 , H01L2224/3213 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/33505 , H01L2224/33517 , H01L2224/48247 , H01L2224/73207 , H01L2224/73215 , H01L2224/73265 , H01L2224/8185 , H01L2224/8385 , H01L2224/83851 , H01L2924/00014 , H01L2924/10155 , H01L2924/01014 , H01L2924/0476 , H01L2924/01074 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.
摘要翻译： 提供一种半导体气体传感器，其包括在其表面上形成有钝化层的半导体本体。 气体敏感控制电极通过间隙与沟道区域分离，或者控制电极被布置为具有间隙的电容器的第一板，并且电容器的第二板连接到作为 电容控制场效应晶体管。 控制电极连接到参考电压。 支撑区域设置有第一支撑结构和第二支撑结构。 在半导体本体的表面上设置接触区域。 第一接触区域具有摩擦连接并且与控制电极的电连接和第二接触区域至少与控制电极的摩擦连接。
-
公开(公告)号：US20050017252A1
公开(公告)日：2005-01-27
申请号：US10912386
申请日：2004-08-02
申请人： Klaus Streubel , Ralph Wirth
发明人： Klaus Streubel , Ralph Wirth
IPC分类号： H01L23/367 , H01L33/20 , H01L33/62 , H01L33/64 , H01L27/15
CPC分类号： H01L33/642 , H01L23/3672 , H01L24/05 , H01L24/32 , H01L24/83 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2224/04026 , H01L2224/05554 , H01L2224/05557 , H01L2224/2919 , H01L2224/32013 , H01L2224/32112 , H01L2224/32221 , H01L2224/83851 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01021 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10158 , H01L2924/10329 , H01L2924/12041 , H01L2924/01031 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting semiconductor component has a semiconductor element containing an active layer, electrical contacts for impressing a current into the active layer (heat being generated at the active layer and at the electrical contacts during operation), and a carrier with a large thermal capacity for absorbing the heat generated during operation. The rear side of the semiconductor element is (electrically and/or thermally) connected to the carrier by a adhesive. Recesses, which accommodate a part of the adhesive when the semiconductor element is connected to the carrier, are provided in the rear side of the semiconductor element.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.008 秒)
