Electrostatic discharge protection device
    3.
    发明授权
    Electrostatic discharge protection device 失效
    静电放电保护装置

    公开(公告)号:US5392185A

    公开(公告)日:1995-02-21

    申请号:US890899

    申请日:1992-05-29

    摘要: In one form of the invention, an Electrostatic Discharge protection device containing at least one heterojunction transistor is disclosed. In another embodiment, an Electrostatic Discharge protection circuit comprises: a first terminal contact 20; an NPN heterojunction bipolar transistor Q2; a PNP bipolar transistor Q1; a base-emitter shunt resistor R2; an emitter of said PNP transistor connected to said first terminal contact; a base of said PNP transistor connected to collector of said NPN transistor; a collector of said PNP transistor connected to a base of said NPN transistor; and an emitter of said NPN transistor connected to a second terminal contact 22, with said base-emitter shunt resistor connected between said base of said NPN transistor and an emitter of said NPN transistor, whereby a low-capacitance device capable of protecting semiconductor devices from electrostatic discharges in excess of 4000 Volts results. Other devices, systems, and methods are also disclosed.

    摘要翻译: 在本发明的一种形式中,公开了一种包含至少一个异质结晶体管的静电放电保护装置。 在另一个实施例中,静电放电保护电路包括:第一端子触头20; NPN异质结双极晶体管Q2; PNP双极晶体管Q1; 基极 - 发射极分流电阻R2; 所述PNP晶体管的发射极连接到所述第一端子触点; 所述PNP晶体管的基极连接到所述NPN晶体管的集电极; 所述PNP晶体管的集电极连接到所述NPN晶体管的基极; 以及连接到第二端子触点22的所述NPN晶体管的发射极,其中所述基极 - 发射极分流电阻连接在所述NPN晶体管的所述基极和所述NPN晶体管的发射极之间,由此能够保护半导体器件的低电容器件 静电放电超过4000伏。 还公开了其它设备,系统和方法。

    Electrostatic discharge protection device

    公开(公告)号:US5537284A

    公开(公告)日:1996-07-16

    申请号:US363140

    申请日:1994-12-23

    摘要: In one form of the invention, an Electrostatic Discharge protection device containing at least one heterojunction transistor is disclosed. In another embodiment, an Electrostatic Discharge protection circuit comprises: a first terminal contact 20; an NPN heterojunction bipolar transistor Q2; a PNP bipolar transistor Q1; a base-emitter shunt resistor R2; an emitter of said PNP transistor connected to said first terminal contact; a base of said PNP transistor connected to collector of said NPN transistor; a collector of said PNP transistor connected to a base of said NPN transistor; and an emitter of said NPN transistor connected to a second terminal contact 22, with said base-emitter shunt resistor connected between said base of said NPN transistor and an emitter of said NPN transistor, whereby a low-capacitance device capable of protecting semiconductor devices from electrostatic discharges in excess of 4000 Volts results. Other devices, systems, and methods are also disclosed.