-
1.发明申请ION IMPLANTATION COMBINED WITH IN SITU OR EX SITU HEAT TREATMENT FOR IMPROVED FIELD EFFECT TRANSISTORS 有权用于改进现场效应晶体管的原位或原位热处理组合的离子植入公开(公告)号：US20080258220A1
公开(公告)日：2008-10-23
申请号：US12128040
申请日：2008-05-28
申请人： Stephen W. Bedell , Joel P. De Souza , Zhibin Ren , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi
发明人： Stephen W. Bedell , Joel P. De Souza , Zhibin Ren , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi
IPC分类号： H01L27/12 , H01L21/8234
CPC分类号： H01L29/66628 , H01L21/26513 , H01L21/324 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/165 , H01L29/66636 , H01L29/66772 , H01L29/7848 , H01L29/78618 , H01L29/78684 , Y10S438/909 , Y10S438/943
摘要： This invention teaches methods of combining ion implantation steps with in situ or ex situ heat treatments to avoid and/or minimize implant-induced amorphization (a potential problem for source/drain (S/D) regions in FETs in ultrathin silicon on insulator layers) and implant-induced plastic relaxation of strained S/D regions (a potential problem for strained channel FETs in which the channel strain is provided by embedded S/D regions lattice mismatched with an underlying substrate layer). In a first embodiment, ion implantation is combined with in situ heat treatment by performing the ion implantation at elevated temperature. In a second embodiment, ion implantation is combined with ex situ heat treatments in a “divided-dose-anneal-in-between” (DDAB) scheme that avoids the need for tooling capable of performing hot implants.
摘要翻译： 本发明教导了将离子注入步骤与原位或非原位热处理组合以避免和/或最小化植入物诱导的非晶化（对绝缘体层上的超薄硅中的FET中的源极/漏极（S / D）区域的潜在问题）的方法， 以及应变S / D区域的植入物诱导的塑性弛豫（对于其中通道应变由嵌入的S / D区域晶格与下面的基底层不匹配而提供的应变通道FET的潜在问题）。 在第一实施例中，通过在升高的温度下进行离子注入将离子注入与原位热处理组合。 在第二实施例中，离子注入与“分剂量退火中间”（DDAB）方案中的非原位热处理组合，避免了对能够进行热植入的加工的需要。
-
公开(公告)号：US10396229B2
公开(公告)日：2019-08-27
申请号：US13103583
申请日：2011-05-09
申请人： Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/07 , H01L31/0224 , H01L31/18 , H01L31/068
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.
-
3.发明申请Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal 审中-公开太阳能电池具有由相同金属的高和低功函调谐的硅化物形成的交错的后触点公开(公告)号：US20120285518A1
公开(公告)日：2012-11-15
申请号：US13103583
申请日：2011-05-09
申请人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/07 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.
摘要翻译： 一种太阳能电池，其具有覆盖吸收层的整个后表面的n型和p型交叉指接头（IBC）。 IBC的空间分离是在垂直于后表面的方向上，从而提供具有零占位分隔的无边界接触。 随着触点在背面，入射在电池前表面的光子可以被吸收而不会有任何阴影。
-
公开(公告)号：US08617938B2
公开(公告)日：2013-12-31
申请号：US13013357
申请日：2011-01-25
IPC分类号： H01L27/00
CPC分类号： H01L21/2256 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device and method for semiconductor fabrication includes forming a buffer layer on a semiconductor substrate and depositing an amorphous elemental layer on the buffer layer. Elements of the elemental layer are diffused through the buffer layer and into the semiconductor layer.
摘要翻译： 用于半导体制造的器件和方法包括在半导体衬底上形成缓冲层并在缓冲层上沉积非晶质元素层。 元素层的元素通过缓冲层扩散到半导体层中。
-
5.发明授权Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites 失效具有改善的少数载流子寿命的晶体硅衬底，包括退火和除去SiO x沉淀物和起始位点的方法公开(公告)号：US07749869B2
公开(公告)日：2010-07-06
申请号：US12186243
申请日：2008-08-05
IPC分类号： H01L21/322 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3225 , H01L21/02032
摘要： A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as HCl.
摘要翻译： 描述了一种用于改善其中具有金属污染物的含硅晶片的少数寿命的方法，其包括在1200℃或更高温度下退火并提供氧气，惰性气体和含氯气体如HCl的气态环境。
-
6.发明授权Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same 失效具有第二浅沟槽隔离（STI）区域的双极结晶体管（BJTS）及其形成方法公开(公告)号：US07342293B2
公开(公告)日：2008-03-11
申请号：US11164757
申请日：2005-12-05
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11 , H01L29/00
CPC分类号： H01L29/732 , H01L29/0649 , H01L29/0657 , H01L29/1004 , H01L29/66242 , H01L29/66272 , H01L29/7378
摘要： The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends between the first STI region and the collection region and undercuts a portion of the active base region with an undercut angle of not more than about 90°. For example, the second STI region may a substantially triangular cross-section with an undercut angle of less than about 90°, or a substantially rectangular cross-section with an undercut angle of about 90°. Such a second STI region can be fabricated using a porous surface section formed in an upper surface of the collector region.
摘要翻译： 本发明涉及双极结型晶体管（BJTS）。 每个BJT的集电极区域位于半导体衬底表面中并且邻近第一浅沟槽隔离（STI）区域。 提供了第二STI区域，其在第一STI区域和收集区域之间延伸，并且底切角度不大于约90°的一部分活性基底区域。 例如，第二STI区域可以具有小于约90°的底切角的基本上为三角形的横截面，或者具有约90°的底切角的基本上矩形的横截面。 可以使用形成在集电区域的上表面中的多孔表面部分来制造这样的第二STI区域。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.028 秒)
